Influence of Ambient Gas on the Epitaxial Lateral Overgrowth of GaN by Metalorganic Vapor Phase Epitaxy

Kawaguchi, Y.; Nambu, Shingo; Yamaguchi, Mamoru; Sawaki, N.; Miyake, Hideo; Hiramatsu, Kazumasa; Tsukamoto, K; Kuwano, Noriyuki; Oki, K.

doi:10.1002/(sici)1521-396x(199911)176:1<561::aid-pssa561>3.3.co;2-d

Cited by 2 publications

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“…This clearly indicates that (a + c)-type dislocations are interactive with the facet planes and are pulled along the direction of lateral growth. Such a behavior of threading dislocations has been already reported by various investigators [7,8,12,13,15,16]. Figure 6 shows a micrograph of the specimen with the mask of W/T = 3/3 (mm).…”

Section: Resultsmentioning

confidence: 99%

Behavior of Threading Dislocations in SAG-GaN Grown by MOVPE

Horibuchi

Kuwano

Oki

et al. 2000

phys. stat. sol. (a)

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Cross-sectional transmission electron microscope (TEM) study has been carried out to reveal the microstructures in selective-area-growth (SAG) GaN, with special reference to the influences of carrier gas species and morphology of masks. The layers of SAG-GaN were deposited over an a-SiO 2 mask of stripe-type by a metalorganic vapor phase epitaxy (MOVPE) method with trimethylgallium and ammonia. The carrier gas was either nitrogen (N 2 ) or hydrogen (H 2 ) of ambient pressure. In the case of N 2 carrier gas, the regions of GaN overlying the mask terrace, or the epitaxial-lateral-overgrowth (ELO) region, tilt the crystallographic orientation gradually toward the center of the mask terrace. The tilting is attributed to low-angle grain boundaries. In the case of H 2 carrier gas, the ELO regions show no tilt of c-axis. In the specimen with the mask of W/T = 3/3 (mm), threading dislocations of both a-type and [a + c]-type run straight upwards, and regions without threading dislocations are then left over the mask-terrace, where W/T is the widths of windows and terraces. It can be expected to obtain a layer of GaN with a very low density of threading dislocations by adopting a double mask, the upper one of which has terraces over the windows of the lower one.

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Section: Resultsmentioning

confidence: 99%

Behavior of Threading Dislocations in SAG-GaN Grown by MOVPE

Horibuchi

Kuwano

Oki

et al. 2000

phys. stat. sol. (a)

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“…In short, from experiments carried out on h1 1 100i stripes on MOVPE GaN, Tadatomo et al [61] and Kawaguchi et al [68][69][70] concluded that H 2 as a carrier gas produces smooth surfaces, but a low lateral growth rate. Conversely, N 2 enhances the lateral growth rate, but the surface quality is poor.…”

Section: Morphology and Defectsmentioning

confidence: 99%

“…Si is a cheap high quality substrate, which can be chemically removed. ELO technology is currently implemented using (111)Si as a substrate [69,70,107,108] as well as SAE [109][110][111].…”

Section: New Developmentsmentioning

confidence: 99%

Epitaxial Lateral Overgrowth of GaN

Beaumont

Vennéguès

Gibart

2001

phys. stat. sol. (b)

191

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Since there is no GaN bulk single crystal available, the whole technological development of GaN based devices relies on heteroepitaxy. Numerous defects are generated in the heteroepitaxy of GaN on sapphire or 6H‐SiC, mainly threading dislocations (TDs). Three types of TDs are currently observed, a type (with Burgers vector 1/3〈$11 \bar{2}0$〉); c type (with 〈0001〉) and mixed a+c (1/3〈$11 \bar{2}3$〉). The Epitaxial Lateral Overgrowth (ELO) technology produces high quality GaN with TD densities in the mid 106 cm—2, linewidth of the low‐temperature photoluminescence (PL) near‐bandgap recombination peaks <1 meV and deep electron traps reduced below 1014 cm—3 (compared to mid 1015 cm—3 in standard GaN). Numerous modifications of the ELO process have been proposed in order either to avoid technological steps (mask‐less ELO) or to improve it (pendeo‐epitaxy). Basically developed on either sapphire or 6H‐SiC, the ELO technology is also achievable on (111)Si or (111)3C‐SiC/Si provided that an appropriate buffer layer is grown to avoid cracks. More sophisticated technologies have been implemented to further increase the useable part of the ELO GaN surface (two technological steps, three‐step ELO). Unfortunately, in‐depth understanding of the basic ELO process is still missing, i.e. of the growth anisotropy and bending of dislocations.

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Influence of Ambient Gas on the Epitaxial Lateral Overgrowth of GaN by Metalorganic Vapor Phase Epitaxy

Cited by 2 publications

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Behavior of Threading Dislocations in SAG-GaN Grown by MOVPE

Behavior of Threading Dislocations in SAG-GaN Grown by MOVPE

Epitaxial Lateral Overgrowth of GaN

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