Influence of Alternate Biasing on TID Effects of Irradiated Mixed-Signal Programmable Arrays

Balen, Tiago R.; Vaz, Rafael Galhardo; Fernandes, Gwendolyn; Gonçalez, Odair Lélis

doi:10.1109/tns.2016.2590319

Cited by 8 publications

(3 citation statements)

References 23 publications

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“…Now that a reasonable degradation mechanism of oxide-based TFTs upon ionizing radiation is proposed, in situ radiation-hard devices can be realized by preventing/mitigating these factors. To increase the fraction of initial recombination and prevent both radiation-induced oxide-trapped charge buildup in the gate dielectric, it is rational to incorporate a thin gate oxide which should enhance the electron–hole recombination rate . Thus, we investigated the in situ radiation stability of (4:1:1) ZITO TFTs with varied SiO 2 thicknesses (300, 200, 100, and 50 nm).…”

Section: Resultsmentioning

confidence: 99%

“…To increase the fraction of initial recombination and prevent both radiation-induced oxide-trapped charge buildup in the gate dielectric, it is rational to incorporate a thin gate oxide which should enhance the electron−hole recombination rate. 67 Thus, we investigated the in situ radiation stability of (4:1:1) ZITO TFTs with varied SiO 2 thicknesses (300, 200, 100, and 50 nm). As summarized in Figures 5 and S9 and Tables S7−S10, the in situ proton irradiation stability and recovery characteristics of these TFTs strongly depend on the SiO 2 thickness.…”

Section: Development Of In Situ Radiation-resistantmentioning

confidence: 99%

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In Situ Radiation Hardness Study of Amorphous Zn–In–Sn–O Thin-Film Transistors with Structural Plasticity and Defect Tolerance

Choi

Kang

et al. 2023

ACS Appl. Mater. Interfaces

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Solution-processed metal-oxide thin-film transistors (TFTs) with different metal compositions are investigated for ex situ and in situ radiation hardness experiments against ionizing radiation exposure. The synergetic combination of structural plasticity of Zn, defect tolerance of Sn, and high electron mobility of In identifies amorphous zinc−indium−tin oxide (Zn−In−Sn−O or ZITO) as an optimal radiation-resistant channel layer of TFTs. The ZITO with an elemental blending ratio of 4:1:1 for Zn/In/Sn exhibits superior ex situ radiation resistance compared to In−Ga− Zn−O, Ga−Sn−O, Ga−In−Sn−O, and Ga−Sn−Zn−O. Based on the in situ irradiation results, where a negative threshold voltage shifts and a mobility increase as well as both off current and leakage current increase are observed, three factors are proposed for the degradation mechanisms: (i) increase of channel conductivity, (ii) interface-trapped and dielectric-trapped charge buildup, and (iii) trap-assisted tunneling in the dielectric. Finally, in situ radiation-hard oxide-based TFTs are demonstrated by employing a radiationresistant ZITO channel, a thin dielectric (50 nm SiO 2 ), and a passivation layer (PCBM for ambient exposure), which exhibit excellent stability with an electron mobility of ∼10 cm 2 /V s and aΔV th of <3 V under real-time (15 kGy/h) gamma-ray irradiation in an ambient atmosphere.

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Section: Resultsmentioning

confidence: 99%

Section: Development Of In Situ Radiation-resistantmentioning

confidence: 99%

In Situ Radiation Hardness Study of Amorphous Zn–In–Sn–O Thin-Film Transistors with Structural Plasticity and Defect Tolerance

Choi

Kang

et al. 2023

ACS Appl. Mater. Interfaces

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“…the state that minimizes radiation-induced degradation) will not always be as simple as removing power to the device(s). When applied to electronic systems comprised of many devices, an effective dynamic biasing implementation will require knowledge of each device's ideal biasing condition to best minimize degradation, whether it be biased, unbiased, or even alternating bias [34]. Determining the appropriate bias condition is further complicated by the complex response of bipolar devices [35], including components found to exhibit enhanced low dose rate sensitivities (ELDRS) [36].…”

Section: B Heavily Integrated and Multi-device Systemsmentioning

confidence: 99%

Dynamic Biasing for Improved On-Orbit Total-Dose Lifetimes of Commercial Electronic Devices

Holliday

Heuser

Manchester

et al. 2022

IEEE Trans. Aerosp. Electron. Syst.

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The survivability of microelectronic devices in ionizing radiation environments drives spacecraft design, capability, mission scope, and cost. This work exploits the periodic nature of many space radiation environments to extend device lifetimes without additional shielding or modifications to the semiconductor architecture. We propose a technique for improving component lifetimes through reduced total-dose accumulation by modulating device bias during periods of intense irradiation. Simulation of this "dynamic biasing" technique applied to singletransistor devices in a typical low-Earth orbit results in an increase of component life from 114 days to 477 days (318% improvement) at the expense of 5% down time (95% duty cycle). The biasing technique is also experimentally demonstrated using gamma radiation to study three commercial devices spanning a range of integrated circuit complexity in 109 rad/min and 256 rad/min dose rate conditions. The demonstrated improvements in device lifetimes using the proposed dynamic biasing technique lays a foundation for more effective use of modern microelectronics for space applications. Analogous to the role real-time temperature monitoring plays in maximizing modern processor performance, the proposed dynamic biasing technique is a means of intelligently responding to the radiation environment and capable of becoming an integral tool in optimizing component lifetimes in space.

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Failure Mechanism and Sampling Frequency Dependency on TID Response of SAR ADCs

et al. 2021

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Influence of Alternate Biasing on TID Effects of Irradiated Mixed-Signal Programmable Arrays

Cited by 8 publications

References 23 publications

In Situ Radiation Hardness Study of Amorphous Zn–In–Sn–O Thin-Film Transistors with Structural Plasticity and Defect Tolerance

In Situ Radiation Hardness Study of Amorphous Zn–In–Sn–O Thin-Film Transistors with Structural Plasticity and Defect Tolerance

Dynamic Biasing for Improved On-Orbit Total-Dose Lifetimes of Commercial Electronic Devices

Failure Mechanism and Sampling Frequency Dependency on TID Response of SAR ADCs

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