Influence of Al-Si-N interlayer on residual stress of CVD diamond coatings

Gaydaychuk, A.; Zenkin, S.; Линник, С.А.

doi:10.1016/j.surfcoat.2018.10.030

Cited by 23 publications

(4 citation statements)

References 34 publications

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“…Such stress is a combination of (a) thermal stress, generated in the process of cooling the sample from the temperature of CVD synthesis (850 • C) down to the room temperature due to the difference in thermal expansion coefficients (TEC) of diamond and silicon, and (b) intrinsic stress caused by formed defects and polycrystalline nature of the film. In the case of CVD growth of PCD layers on thin substrates, such stress usually results in the notable bending of the "diamond-on-Si" plates [47]. The reduction in such thermal stress and related plate curvature is one of the main goals of the optimization of the CVD growth process.…”

Section: Cvd Synthesis Of Thick Diamond Layersmentioning

confidence: 99%

Effect of Substrate Holder Design on Stress and Uniformity of Large-Area Polycrystalline Diamond Films Grown by Microwave Plasma-Assisted CVD

et al. 2020

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In this work, the substrate holders of three principal geometries (flat, pocket, and pedestal) were designed based on E-field simulations. They were fabricated and then tested in microwave plasma-assisted chemical vapor deposition process with the purpose of the homogeneous growth of 100-μm-thick, low-stress polycrystalline diamond film over 2-inch Si substrates with a thickness of 0.35 mm. The effectiveness of each holder design was estimated by the criteria of the PCD film quality, its homogeneity, stress, and the curvature of the resulting “diamond-on-Si” plates. The structure and phase composition of the synthesized samples were studied with scanning electron microscopy and Raman spectroscopy, the curvature was measured using white light interferometry, and the thermal conductivity was measured using the laser flash technique. The proposed pedestal design of the substrate holder could reduce the stress of the thick PCD film down to 1.1–1.4 GPa, which resulted in an extremely low value of displacement for the resulting “diamond-on-Si” plate of Δh = 50 μm. The obtained results may be used for the improvement of already existing, and the design of the novel-type, MPCVD reactors aimed at the growth of large-area thick homogeneous PCD layers and plates for electronic applications.

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Section: Cvd Synthesis Of Thick Diamond Layersmentioning

confidence: 99%

Effect of Substrate Holder Design on Stress and Uniformity of Large-Area Polycrystalline Diamond Films Grown by Microwave Plasma-Assisted CVD

et al. 2020

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“…Such stress is a combination of (a) thermal stress, generated in the process of cooling the sample from the temperature of CVD synthesis (850 • C) down to room temperature due to the difference in thermal expansion coefficients (TEC) of diamond and silicon; and (b) intrinsic stress caused by formed defects and the polycrystalline nature of the film. In the case of CVD growth of PCD layers on thin substrates, such stress usually results in the notable bow of the "diamond-on-Si" plates [53,54]. The reduction of such thermal stress and related plate curvature is one of the main goals for the optimization of the CVD growth process.…”

Section: Raman Spectroscopymentioning

confidence: 99%

Combined HF+MW CVD Approach for the Growth of Polycrystalline Diamond Films with Reduced Bow

et al. 2023

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A combination of two methods of chemical vapor deposition (CVD) of diamond films, microwave plasma–assisted (MW CVD) and hot filament (HF CVD), was used for the growth of 100 µm-thick polycrystalline diamond (PCD) layers on Si substrates. The bow of HF CVD and MW CVD films showed opposite convex\concave trends; thus, the combined material allowed reducing the overall bow by a factor of 2–3. Using MW CVD for the growth of the initial 25 µm-thick PCD layer allowed achieving much higher thermal conductivity of the combined 110 µm-thick film at 210 W/m·K in comparison to 130 W/m·K for the 93 µm-thick pure HF CVD film.

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“…[ 5 ] In addition, high synthesis temperatures during the deposition process of CVD diamond of T d = 500–800 °C and thermal mismatch of the regarded expansion coefficients between the cutting tool substrate and the growing CVD diamond coating result in a disadvantageous residual stress state. [ 6 ]…”

Section: Introductionmentioning

confidence: 99%

Ex Situ Residual Stress Analysis of Chemical Vapor Deposited Diamond Coated Cutting Tools by Synchrotron X‐Ray Diffraction in Transmission Geometry

et al. 2021

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Influence of Al-Si-N interlayer on residual stress of CVD diamond coatings

Cited by 23 publications

References 34 publications

Effect of Substrate Holder Design on Stress and Uniformity of Large-Area Polycrystalline Diamond Films Grown by Microwave Plasma-Assisted CVD

Effect of Substrate Holder Design on Stress and Uniformity of Large-Area Polycrystalline Diamond Films Grown by Microwave Plasma-Assisted CVD

Combined HF+MW CVD Approach for the Growth of Polycrystalline Diamond Films with Reduced Bow

Ex Situ Residual Stress Analysis of Chemical Vapor Deposited Diamond Coated Cutting Tools by Synchrotron X‐Ray Diffraction in Transmission Geometry

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