Influence of a high electric field on the photoluminescence from silicon nanocrystals in SiO2

Low-voltage onset of electroluminescence in nanocrystalline-Si/SiO2 multilayers

“…The redshift ͑to longer wavelengths͒ of PL emission in the presence of electric field was shown for Si nanocrystals embedded in SiO 2 matrix. 32,33 This effect cannot explain our observations since we observed a blueshift and not a redshift. The strong blueshift of our EL peak wavelength with increasing applied voltages is due to selective injection into the ensemble of size dispersed Si nanocrystals.…”

Ultrafast time-resolved spectroscopy of Si nanocrystals embedded in SiO2 matrix

“…As shown from our results, the experimental method indicates a pinning of the gap in small NCs. This pinning of the gap has been theoretically predicted from Monte-Carlo simulations [17] and has been experimentally confirmed also by PL measurements [18][19][20] in porous passivated by oxygen (star symbols, in Fig. 3) and five NCs/SiO 2 bilayers (solid square, in Fig.…”

“…The red line represent the quantum confinement model [12] whereas the dashed line shows the deviation of our data from this model due to the coupling of quantized levels with the surface vibronic states. The star symbols represent the experimental data measured by PL [18] in porous silicon passivated by oxygen, the open square represents the ellipsometric extracted value [15] and the solid square represents the measured by PL [20] in five NCs/SiO2 bilayers. constants of these mechanisms are respectively 11 and 3 ps for 4 and 2.5 nm NCs sizes.…”

Nanosecond Field-Induced Quenching of the Luminescence from Er-Doped Silicon Nanocrystals

“…[16][17] However, other quenching mechanisms can not be excluded, such as the quantum confined Stark effect and enhanced ionization of the excitons in Si NCs by tunneling under high electric field, which cause a reduction of the excitonic recombination rate and subsequent energy transfer from Si NCs to the Er 3+ ions. 18 In this work, Er-doped Si-rich SiO 2 layers containing Si NCs are prepared by ion implantations and annealing. The PL under an electric bias is studied in an indium-tin * Author to whom correspondence should be addressed.…”