Microsyst Technol
 2017
DOI: 10.1007/s00542-017-3647-7
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Inertial sensing MEMS device using a floating-gate MOS transistor as transducer by means of modifying the capacitance associated to the floating gate

Griselda Stephany Abarca-Jimenez
1
,
Jesús Mares Carreño
2
,
M. A. Reyes-Barranca
3
et al.
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Cited by 7 publications
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References 12 publications
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Validation of a CMOS-MEMS accelerometer based on FGMOS transduction by electromechanical modification of its coupling coefficient

Abarca-Jimenez1,
Carreño2,
Reyes-Barranca
3
et al. 2019
Microsyst Technol
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Validation of a CMOS-MEMS accelerometer based on FGMOS transduction by electromechanical modification of its coupling coefficient

Abarca-Jimenez1,
Carreño2,
Reyes-Barranca
3
et al. 2019
Microsyst Technol
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Two-objective metaheuristic optimization for floating gate transistor-based CMOS-MEMS inertial sensors

Granados-Rojas
1
,
Reyes-Barranca
2
,
Gonzalez-Navarro
3
et al. 2021
Microsyst Technol
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CMOS-MEMS electrostatic micromotor based on FGMOS transduction by electromechanical modification of its coupling coefficient and low operating voltage

Sánchez–Márquez,
Abarca–Jiménez,
Reyes–Barranca
et al. 2024
Microsyst Technol
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