Nanostructured materials can act as electron energy filters by funneling thermally broadened electrons through discrete energy levels. To date, all implementations of this effect have used a single nanostructure as an electron filter, thereby avoiding the potential influence of heterogeneity that would be present in any device scale application. In this study, we develop a theoretical model of the electron filtering properties of nanostructured materials that explicitly includes the effects of thermal broadening and size polydispersity on the heterogeneity of nanostructure energy levels. We find that under certain conditions quantum dot solids can perform as effective electronic energy filters, but that materials comprised of quantum wires or quantum wells have continous transverse electronic bands that make them ineffective for this purpose. We identify a material specific length scale parameters, L crit , that specifies the maximum mean quantum dot size that can yield effective energy filtering. Moreover, we show that energy filtering materials comprised of QDs with size near L crit are maximally robust to heterogeneity in quantum dot size, tolerating variations ∼ 10% of the mean size. The length scale L crit can be estimated directly from the widely-tabulated density of states effective mass and show that semiconductors with light conduction band electrons, such as III-V type materials InSb and GaAs are the most forgiving for energy filtering applications. Taken together, these results provide a practical set of quantitative design principles for semiconductor electron filters.