Inelastic-Electron-Tunneling Spectroscopy of Metal-Insulator-Metal Junctions

Klein, J.; Léger, Alain; Belin, M.; Defourneau, D.; Sangster, M J L

doi:10.1103/physrevb.7.2336

Cited by 229 publications

(89 citation statements)

References 21 publications

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“…We consider a broadening due to the temperature as well as a broadening due to the lock-in amplifier by convoluting ρ BCS with the temperature-broadening function as well as with the instrumental broadening function of the lockin amplifier. 66,67 We assume the lifetime-broadening to be of the order of 0.1 meV 64 whereas the temperaturebroadening is around 2.2 meV full width at half maximum (FWHM) at 7.3 K. 67 Therefore, for our fits the lifetime parameter is set to a small value such that increasing Γ by a factor 2 does not change our results. Thus only the temperature T and the energy gap ∆ are used as fit parameters.…”

Section: Resultsmentioning

confidence: 99%

Surface reconstruction and energy gap of superconductingV3Si(001)

2009

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A yet unknown surface reconstruction of V3Si(001), which is most likely induced by carbon, is used to investigate the quasi-particle energy gap at the atomic scale by a cryogenic scanning tunneling microscope. The width of the gap was virtually not altered at and close to carbon impurities, nor did it change at different sites of the reconstructed surface lattice. A remarkable modification of the spectroscopic signature of the gap was induced, however, upon moving the tip of the microscope into controlled contact with the superconductor. Spectroscopy of the resulting normal-metalsuperconductor junction indicated the presence of Andreev reflections.

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Section: Resultsmentioning

confidence: 99%

Surface reconstruction and energy gap of superconductingV3Si(001)

2009

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“…In the low voltage region [ Fig. 2(a)], the normalized (d 2 I/dV 2 )/(dI/dV ) amplitude is more intense than what is usually achieved by IETS with local probes [20][21][22][23] and in tunnel junctions [39][40][41], where typical peak intensities are at best of the order of 1-3 V −1 . In the present case amplitudes higher than 5 V −1 have been achieved in the low voltage range, where the conductance suppression occurs.…”

Section: Aq Junctions Transport Measurementsmentioning

confidence: 99%

Inelastic electron tunneling spectroscopy in molecular junctions showing quantum interference

et al. 2017

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Destructive quantum interference effect is implemented in large area molecular junctions to improve signatures of electron-phonon interaction. Vertical molecular junctions based on a cross-conjugated anthraquinone layer were fabricated and low-noise transport measurements were performed by acquiring simultaneously the current-voltage characteristics, its second derivative, and the differential conductance. Signatures of vibrational modes excited by inelastic events are present in the whole measured voltage range and superpose to the conductance suppression induced by destructive quantum interference. As a consequence vibrational modes have improved visibility in the low energy window (<80 meV). Inelastic electron transport spectroscopy data are compared to infrared attenuated total reflection spectroscopy on Au/anthraquinone thin films. Common vibrational modes can be clearly identified, but inelastic electron tunneling spectroscopy reveals the existence of vibrational modes in a wider energy range (0-400 meV) where infrared spectroscopy is lacking.

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“…Lorentzian convoluted with a Gaussian) profile in order to remove the broadening introduced by the modulation used for lockin detection [192]. While this approach appears appealing it may introduce additional problems since the effect of the modulation is not appropriately described by a Gaussian [193]. Moreover, in practice different slopes of the dI=dV spectra below and above the surface-state onset are usually observed leading to extra structure in the numerical derivative the quality of which also tends to suffer from enhanced noise.…”

Section: Spectroscopy Of ''Perfect'' Surfacesmentioning

confidence: 99%