Inelastic Electron Tunneling Spectroscopy: Investigation of Bulk Dielectrics and Molecules

Charge-Trapping-Induced Hysteresis Effects in Highly Doped Silicon Metal–Oxide–Semiconductor Structures

“…Their occurrence corresponds to the voltages at which sudden current bumps appear in Figure 3a-d. For the positive voltages, we observe the valley-topeak shape signals, which are usually attributed to the charge-trapping process [12]. We attribute these features rather to the blockage of the trap-assisted tunneling path, as will be shown later.…”

“…In order to understand these features, we analyzed the transport through th using inelastic electron tunneling spectroscopy (IETS). It is a technique that can b to study phonons, bonding vibrations, and impurities [12,18] in MIM/MIS struct can also be helpful to analyze tunneling through traps in dielectrics [19,20], giving mation about their geometrical position and energy. The IETS signal is proportiona current's second derivative, and it is usually measured using the lock-in amplifie duce the signal-to-noise ratio.…”

“…The relevant featu In order to understand these features, we analyzed the transport through the traps using inelastic electron tunneling spectroscopy (IETS). It is a technique that can be used to study phonons, bonding vibrations, and impurities [12,18] in MIM/MIS structures. It can also be helpful to analyze tunneling through traps in dielectrics [19,20], giving information about their geometrical position and energy.…”

“…This work analyzes the current-voltage characteristics of Al/SiO 2 /n++ Si structures not subjected to the forming process, and explains their behavior using electron tunneling spectroscopy [11]. This is a very sensitive technique that can be used to study the thin gate dielectrics and can provide lots of valuable information, particularly about the location of traps [12]. We show that the shape of the I-V curves can be attributed to the space-charge limited conduction (SCLC) related to shallow traps and tunneling through deep trap levels in the oxide.…”

A computational model for a molecular chemical sensor

“…Despite significant research on molecular electronics based on IETS, [11][12][13][14][15][16][17] less work has been done to investigate the use of IETS in molecular electronics as a mechanism of chemical sensing, and in particular to focus on the I(V) characteristic of the sensor device, rather than the second derivative of the I(V). One particular problem for the I(V) characteristics of such sensor devices is that their sensitivity is determined by the NDR shape.…”