Charge-Trapping-Induced Hysteresis Effects in Highly Doped Silicon Metal–Oxide–Semiconductor Structures

Abstract

It is shown that a simple metal–oxide–semiconductor (MOS) structure with highly doped silicon substrate can exhibit current–voltage hysteresis effects related to sudden rises and drops in the flowing electric current. Experimental current–voltage characteristics of Al-SiO2-(n++Si) structures are presented and discussed. Their analysis shows that the ohmic and shallow traps assisted space-charge limited conduction (SCLC) are the dominating transport mechanisms. Sudden rises and drops in the flowing current, leading to the current–voltage hysteresis effects, are attributed to tunneling through deep traps in the oxide. Based on inelastic electron tunneling spectroscopy (IETS), the energy levels of the deep traps and their position in the oxide are evaluated.

Modulating Fermi energy in few-layer MoS2via metal passivation with enhanced detectivity for near IR photodetector

“…Under the reverse current, the trapping rate could depend on the flow of current through the device and the number of empty traps, but with the forward current, it depends on the density of filled states. 35,36 Thus, the passivated photodetectors capture the photogenerated electron-hole pairs and recombination at the interface gets easier, leading to the enhanced photoconduction of the devices, as shown in ESI, † Fig. S3.…”