2017 IEEE International Electron Devices Meeting (IEDM) 2017
DOI: 10.1109/iedm.2017.8268404
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Industrialised SPAD in 40 nm technology

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Cited by 42 publications
(31 citation statements)
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“…A 635 nm red LED is driven by a Keysight 33600A waveform generator which generates an analogue 60 Mbps unipolar OOK signal with rectangular pulse shaping. The SPAD photon detection probability (PDP) at this wavelength is 14.4% [21]. Considering that the symbol duration is T c = 16.7 ns, the system is operated in the sub-dead-time regime with a DTSD ratio of 1.26.…”
Section: Resultsmentioning
confidence: 99%
“…A 635 nm red LED is driven by a Keysight 33600A waveform generator which generates an analogue 60 Mbps unipolar OOK signal with rectangular pulse shaping. The SPAD photon detection probability (PDP) at this wavelength is 14.4% [21]. Considering that the symbol duration is T c = 16.7 ns, the system is operated in the sub-dead-time regime with a DTSD ratio of 1.26.…”
Section: Resultsmentioning
confidence: 99%
“…1. The imager is fabricated in STMicroelectronics 40 nm CMOS foundry technology optimized for SPADs [19] and comprises a 128 x 128 array of pixels. Each half-column of the imager array is mapped to a corresponding Vision-ToF processor as shown in Fig.…”
Section: Sensor Architecturementioning
confidence: 99%
“…Especially, SPADs implemented in a standard complementary metal oxide semiconductor (CMOS) process is the key that enables high-volume production of low-cost single-photon sensors. Although many efforts have been focusing on realizing CMOS-compatible SPADs and single-photon sensors in deep-submicron CMOS technology [4][5][6][7][8][9][10][11][12][13][14][15][16], the majority of them rely on non-standard processes with customized layers that increase the cost and design complexity.…”
Section: Introductionmentioning
confidence: 99%