Industrial growth and characterization of Si‐doped GaAs crystal by a novel multi‐crucible Bridgman method

Abstract

In this wok, a novel multi‐crucible Bridgman method is developed to produce the Ø 2 inch Si‐doped GaAs crystals. Five placements are designed in the furnace means five ingots could be produced at the same time. Twinning and high dislocation density are the main growth defects that often take place in the crystals. After the solid‐liquid interface and crystal cooling rate are optimized, the Si‐doped GaAs crystals with favorable single crystalline yield are successfully obtained. The average etching pits density (EPD) of optimized GaAs crystals is <1500/cm2. Full width at half maximum (FWHM) are tested all less than 60″ that indicates GaAs crystals have high crystalline quality. The carrier concentration near the bottom and tail parts of ingots is in range of (4.5‐5.9) × 1017 /cm3 and (1.2‐2.1) × 1018 /cm3 due to segregation of Si element in GaAs crystals. Accordingly, the mobility is decreased from 2128–2651 cm2/v.s to 1581–1854 cm2/v.s. The result proves such multi‐crucible Bridgman method is a feasible way for industrial growth of Si‐doped GaAs crystals for opto‐electronic application.

Fabrication and Thermoelectric Properties of Single-Crystal Argyrodite Ag8SnSe6

“…The Ag 8 SnSe 6 crystal is grown by a vertical Bridgman technique; the furnace and the temperature distribution are as described in our previous work . Before the crystal growth, the volatility of Ag 8 SnSe 6 is checked to guide the choice of growth temperature.…”

High Homogeneity of Magnesium Doped LiNbO3 Crystals Grown by Bridgman Method

“…Using the prepared LN:Mg polycrystalline powder, we firstly grew Ø1" LN:Mg crystals and served them as seed crystals continue to grow Ø2" LN crystals doped with different MgO concentration of 0, 3%, and 5 mol% by the Bridgman method with multi-crucible [31], which were labeled as LN, LN: Mg3, and LN: Mg5, respectively. The prepared LN: Mg polycrystalline powder was placed in three Pt crucibles with the same dimension of Ø50 mm × 100 mm.…”

Influence of Si Doping on Dislocations and Mechanical Properties of GaAs Crystals Grown by Modified Vertical Bridgman Method

“…The GaAs: Si crystal was grown in a self-designed Bridgman furnace, as described in our previous publication. [24] During the growth, the control of arsenic pressure in the quartz ampoule is an important factor. Due to the deformation of the quartz at the growth temperature of 1270 °C, additional arsenic element is necessary to balance the pressure.…”