Inductively coupled plasma etching of III–V semiconductors in BCl3-based chemistries

Nanoimprint lithography patterned GaAs templates for site-controlled InAs quantum dots

“…A smooth, low-damage GaAs etching recipe was developed based on Refs. [8][9][10]. After GaAs etching, the residual mr-UVCur06 resist was removed by oxygen plasma (ICP-RIE).…”

Highly selective dry etching of GaP in the presence of AlxGa1–xP with a SiCl4/SF6plasma

“…ICP-RIE processes have been developed for compounds such as GaAs, AlGaAs, InGaAs, InP and GaN [13][14][15][16][17][18]. In contrast, GaP is a largely unexplored material for integrated nanophotonic and opto-electronic applications despite its attractive combination of large refractive index and large electronic bandgap, and fabrication processes for this material are in general far less advanced.…”

Influence of mask material and process parameters on etch angle in a chlorine-based GaN dry etch

“…To a certain extent this is correlated to redeposition at the etched sidewall caused by the added N 2 . 9 For an etch depth of 2.3 lm, shown in Fig. 1(b), deep rifts are observed.…”

“…Concerning the dry etch processes, there has been a significant effort in analyzing the morphology of the etched surface. [8][9][10] Yet, to the best of our knowledge, the influence of dry etch process parameters on the etch angle in the GaN has only been reported sparsely in the past. 8,11 More recently, variations of etch angles using a photoresist as an etch mask have been demonstrated.…”