Inductively Coupled Plasma Etching of SiC for Power Switching Device Fabrication

Cao, Li Hui; Li, B.; Zhao, J.H.

doi:10.4028/www.scientific.net/msf.264-268.833

Cited by 6 publications

(4 citation statements)

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“…High-density plasma dryetching techniques such as electron cyclotron resonance and inductively coupled plasma have been developed to meet the need for deep etching of SiC. Residue-free patterned etch rates exceeding a thousand angstroms a minute have been demonstrated [122,123,[125][126][127][128].…”

Section: Patterned Etching Of Sic For Device Fabricationmentioning

confidence: 99%

Silicon Carbide Technology

Neudeck¹

2006

The VLSI Handbook, Second Edition

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Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines [1][2][3][4][5][6][7]. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems.This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.possible SiC polytypes with hexagonal crystal structure. Similarly, 15R-SiC is the most common of the many possible SiC polytypes with a rhombohedral crystal structure.

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Section: Patterned Etching Of Sic For Device Fabricationmentioning

confidence: 99%

Silicon Carbide Technology

Neudeck¹

2006

The VLSI Handbook, Second Edition

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“…Even with the lower ICP damage etching the electrical properties of SiC are changed during etching, and annealing or removal of the damage region is needed. [7][8][9] High temperature oxidation of the etched surface passivates the etch damage, but a device can only be exposed to such ambients early in the processing. This has to be taken into account when making heterojunctions with GaN on SiC.…”

Section: Introductionmentioning

confidence: 99%

“…7 The ideality factor, reverse leakage current and barrier height reflects the interface properties of the etched surface in comparison with an unetched reference sample.…”

Section: Introductionmentioning

confidence: 99%

Inductively coupled plasma etch damage in 4H−SiC investigated by Schottky diode characterization

Danielsson

Lee

Zetterling

et al. 2001

Journal of Elec Materi

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“…Alternatively etch damage can be removed using sacrificial oxidation, which has a surface smoothing effect [11][12][13]. Despite the importance of the effect of reactive ion etching on Schottky gates for SITs and MESFETs, relatively few studies have been carried out on 4H-SiC, the polytype of choice for these devices [7,10,[14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Surface preparation for Schottky metal - 4H-SiC contacts formed on plasma-etched SiC

Morrison¹,

Pidduck²,

Moore³

et al. 2000

Semicond. Sci. Technol.

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Silicon-carbide-based devices frequently require a Schottky gate to be deposited on a plasma-etched surface. This paper considers the effectiveness of nine different pre-metallization surface preparation procedures in removing the etch damage. The surfaces were assessed by x-ray photoelectron spectroscopy and by current-voltage measurement of nickel Schottky diodes formed on both reactive-ion-etched and non-reactive-ion-etched silicon face 4H-SiC. The treatments included simple UV-ozone and solvent cleans, oxygen plasma, deposited oxide and thermal oxidation. It was confirmed that the only process which removed all traces of surface contamination and etch damage, producing ideal Schottky diodes, was sacrificial oxidation.

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Inductively Coupled Plasma Etching of SiC for Power Switching Device Fabrication

Cited by 6 publications

References 0 publications

Silicon Carbide Technology

Silicon Carbide Technology

Inductively coupled plasma etch damage in 4H−SiC investigated by Schottky diode characterization

Surface preparation for Schottky metal - 4H-SiC contacts formed on plasma-etched SiC

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