Inducing and Manipulating Heteroelectronic States in a Single 
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 Thin Flake

Chen, Qihong; Lü, Jianming; Lei, Liang; Zheliuk, Oleksandr; Ali, Asif; Sheng, Ping; Ye, J.T.

doi:10.1103/physrevlett.119.147002

Cited by 20 publications

(24 citation statements)

References 56 publications

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“…Hence

B_{F} = false(h C_{g} false/ g e^{2} false) false(V_{BG} - V_{th} false)

, the Landau‐level degeneracy g can be obtained from the linear fitting of back gate dependence of B F . In Figure c, the fitting result

g = 3.06

is in good agreement with that reported in the literature . The threefold Landau level suggests that the conducting electrons are from the Q/Q′ valleys as there are 3 Q and 3 Q′ valleys in the first Brillouin zone, and the degeneracy between Q and Q′ valleys is lifted at a high field due to the valley Zeeman effect (right panel of Figure c), leading to a degeneracy of 3.…”

supporting

confidence: 88%

Probing and Tuning the Spin Textures of the K and Q Valleys in Few‐Layer MoS₂

Chen

Yumin

Zheliuk

et al. 2019

Physica Rapid Research Ltrs

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The strong spin–orbit coupling along with broken inversion symmetry in transition metal dichalcogenides (TMDs) results in spin polarized valleys, which are the origins of many interesting properties such as Ising superconductivity, circular dichroism, valley Hall effect, etc. Herein, it is shown that encapsulating few‐layer MoS2 between hexagonal boron nitride (h‐BN) and gating the electrical contacts by ionic liquid pronounce Shubnikov–de Haas (SdH) oscillations in magnetoresistance. Notably, the SdH oscillations remain unchanged in tilted magnetic fields, demonstrating that the spins of the Q/Q′ valleys are firmly locked to the out‐of‐plane direction; therefore, Zeeman energy is insensitive to the in‐plane magnetic field. Ionic liquid gating induces superconductivity on the surface of unencapsulated MoS2. The spins of Cooper pairs are strongly pinned to the out‐of‐plane direction by the effective Zeeman field, hence are protected from being realigned by an in‐plane magnetic field, namely, Ising protection. As a result, superconductivity persists in an in‐plane magnetic field up to 14 T, in which Tc only decreases by ≈0.3 K from Tc0 as ≈7 K. By applying back gate, the strength of Ising protection can be effectively tuned, where an increase in 70% is observed when back gate changes from +90 to −90 V.

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“…Hence

B_{F} = false(h C_{g} false/ g e^{2} false) false(V_{BG} - V_{th} false)

, the Landau‐level degeneracy g can be obtained from the linear fitting of back gate dependence of B F . In Figure c, the fitting result

g = 3.06

supporting

confidence: 88%

Probing and Tuning the Spin Textures of the K and Q Valleys in Few‐Layer MoS₂

Chen

Yumin

Zheliuk

et al. 2019

Physica Rapid Research Ltrs

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“…Most of these results have been interpreted in terms of the population of the conduction band minima at K/K' 23,[31][32][33] , which are global minima in both 1L-MoS 2 3,18 and electrostatically-doped FL-MoS 2 16,23,31,32 , Fig.1b. Theoretical investigations however suggested that the population of the high-energy minima at Q/Q' may have an important role in determining the properties of gated MoS 2 flakes, by providing contributions both to EPC 16,18 and SOC 19,34 .…”

mentioning

confidence: 99%

“…This leads to a finite SOC 37,38 , which lifts the spin degeneracy in the conduction band and gives rise to two spin-orbit-split sub-bands in each valley 16,37 , as shown in Fig.1b-d for FL-MoS 2 . When the system is field-effect doped, the inversion symmetry breaking increases with increasing transverse electric field 31,33 , due to the fact that induced e − tend to become more localized within the first layer 31,33,35 . Hence, the SOC and the spin-orbit splitting between the bands increase as well, as was calculated in Ref.…”

mentioning

confidence: 99%

Multi-Valley Superconductivity in Ion-Gated MoS₂ Layers

et al. 2018

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Layers of transition metal dichalcogenides (TMDs) combine the enhanced effects of correlations associated with the two-dimensional limit with electrostatic control over their phase transitions by means of an electric field. Several semiconducting TMDs, such as MoS, develop superconductivity (SC) at their surface when doped with an electrostatic field, but the mechanism is still debated. It is often assumed that Cooper pairs reside only in the two electron pockets at the K/K' points of the Brillouin Zone. However, experimental and theoretical results suggest that a multivalley Fermi surface (FS) is associated with the SC state, involving six electron pockets at Q/Q'. Here, we perform low-temperature transport measurements in ion-gated MoS flakes. We show that a fully multivalley FS is associated with the SC onset. The Q/Q' valleys fill for doping ≳ 2 × 10 cm, and the SC transition does not appear until the Fermi level crosses both spin-orbit split sub-bands Q and Q. The SC state is associated with the FS connectivity and promoted by a Lifshitz transition due to the simultaneous population of multiple electron pockets. This FS topology will serve as a guideline in the quest for new superconductors.

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“…Since 2H and 1T phases are common structures in 2D TMDs, the both of structures of AsTe 2 monolayer can be used as the non‐gold contact for low‐cost switching device applications. Owing to their non‐magnetic robust metallicity, the investigation electron‐phonon coupling and possible evolution of superconducting characteristics, of AsTe 2 monolayers under confinement can be an attractive topic for future studies.…”

Section: Discussionmentioning

confidence: 99%

Monolayer AsTe₂: Stable Robust Metal in 2D, 1D and 0D

2018

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The structural, phononic, and electronic properties of the monolayer structures of AsTe are characterized by performing density functional theory (DFT) calculations. Total energy optimization and phonon calculations reveal that single layers of the 2H-AsTe and 1T-AsTe phases form dynamically stable crystal structures. Electronic structure analysis also shows that both 2H and 1T phases have nonmagnetic metallic character. It is also predicted that the metallic nature of the ultra-thin both 2H-AsTe and 1T-AsTe structures remain unchanged even under high biaxial strain values. For further examination of the dimensionality effect in the robust metallicity in 2D AsTe phases, electronic characteristics of 1D nanoribbons and 0D quantum dots are also investigated. It is found that independent from the dimension and crystallographic orientations 0D and 1D structures of 2H- and 1T-AsTe structures have metallic behavior. It is found that single layers of AsTe are quite promising materials for nanodevice applications owing to the robust metallic character.

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Inducing and Manipulating Heteroelectronic States in a Single MoS2 Thin Flake

Cited by 20 publications

References 56 publications

Probing and Tuning the Spin Textures of the K and Q Valleys in Few‐Layer MoS₂

Probing and Tuning the Spin Textures of the K and Q Valleys in Few‐Layer MoS₂

Multi-Valley Superconductivity in Ion-Gated MoS₂ Layers

Monolayer AsTe₂: Stable Robust Metal in 2D, 1D and 0D

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Inducing and Manipulating Heteroelectronic States in a Single MoS2 Thin Flake

Cited by 20 publications

References 56 publications

Probing and Tuning the Spin Textures of the K and Q Valleys in Few‐Layer MoS2

Probing and Tuning the Spin Textures of the K and Q Valleys in Few‐Layer MoS2

Multi-Valley Superconductivity in Ion-Gated MoS2 Layers

Monolayer AsTe2: Stable Robust Metal in 2D, 1D and 0D

Contact Info

Product

Resources

About

Probing and Tuning the Spin Textures of the K and Q Valleys in Few‐Layer MoS₂

Probing and Tuning the Spin Textures of the K and Q Valleys in Few‐Layer MoS₂

Multi-Valley Superconductivity in Ion-Gated MoS₂ Layers

Monolayer AsTe₂: Stable Robust Metal in 2D, 1D and 0D