The controlled functionalization of single-walled carbon nanotubes with luminescent sp3-defects has created the potential to employ them as quantum-light sources in the near-infrared. For that, it is crucial to control their spectral diversity. The emission wavelength is determined by the binding configuration of the defects rather than the molecular structure of the attached groups. However, current functionalization methods produce a variety of binding configurations and thus emission wavelengths. We introduce a simple reaction protocol for the creation of only one type of luminescent defect in polymer-sorted (6,5) nanotubes, which is more red-shifted and exhibits longer photoluminescence lifetimes than the commonly obtained binding configurations. We demonstrate single-photon emission at room temperature and expand this functionalization to other polymer-wrapped nanotubes with emission further in the near-infrared. As the selectivity of the reaction with various aniline derivatives depends on the presence of an organic base we propose nucleophilic addition as the reaction mechanism.
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The functionalization
of single-walled carbon nanotubes (SWCNTs)
with luminescent sp
3
defects has greatly improved their
performance in applications such as quantum light sources and bioimaging.
Here, we report the covalent functionalization of purified semiconducting
SWCNTs with stable organic radicals (perchlorotriphenylmethyl, PTM)
carrying a net spin. This model system allows us to use the near-infrared
photoluminescence arising from the defect-localized exciton as a highly
sensitive probe for the short-range interaction between the PTM radical
and the SWCNT. Our results point toward an increased triplet exciton
population due to radical-enhanced intersystem crossing, which could
provide access to the elusive triplet manifold in SWCNTs. Furthermore,
this simple synthetic route to spin-labeled defects could enable magnetic
resonance studies complementary to
in vivo
fluorescence
imaging with functionalized SWCNTs and facilitate the scalable fabrication
of spintronic devices with magnetically switchable charge transport.
Engineering the properties of quantum electron systems, e.g., tuning the superconducting phase using low driving bias within an easily accessible temperature range, is of great interest for exploring exotic physical phenomena as well as achieving real applications. Here, the realization of continuous field-effect switching between superconducting and non-superconducting states in a few-layer MoS transistor is reported. Ionic-liquid gating induces the superconducting state close to the quantum critical point on the top surface of the MoS , and continuous switching between the super/non-superconducting states is achieved by HfO back gating. The superconducting transistor works effectively in the helium-4 temperature range and requires a gate bias as low as ≈10 V. The dual-gate device structure and strategy presented here can be easily generalized to other systems, opening new opportunities for designing high-performance 2D superconducting transistors.
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