Induced V and reduced Co magnetic moments at the V/Co interface

Huttel, Yves; Laan, G. van der; Johal, T. K.; Telling, Neil D.; Benčok, P.

doi:10.1103/physrevb.68.174405

Cited by 40 publications

(46 citation statements)

References 60 publications

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“…1, [37][38][39][40][41][42][43] The opposite sign for the XMCD signals of the hysteresis loops for V and Co in Fig. 1 provide direct evidence for the opposite magnetization of the V and Co thin layers, also in agreement with published results.…”

Section: Element-specific Xmcd Hysteresis Loopssupporting

confidence: 79%

“…Recently, we reported the magnetic properties of V / Co and Co/ V interfaces grown on Cu͑100͒ surfaces and for very low V and Co coverages. 37 In particular, we showed that Co atoms induce a strong magnetic moment on the V atoms with opposite magnetization direction. The trends in the magnetic moments vs Co and V thicknesses showed that the Co magnetic moments decrease with decreasing Co and increasing V coverages.…”

Section: Introductionmentioning

confidence: 99%

“…In very thin Co layers deposited on V, the Co-V hybridization can induce a charge transfer between the two metals and as a consequence, n h can vary with layer thickness. 37 However, here the thicknesses of the layers allow us to use a standard n h value, where we have chosen n h = 2.49, which is the value of hcp Co. 56,64 For the Co and V layer thicknesses considered here, saturation effects might affect the determination of the atomic magnetic moment values. Saturation effects are difficult to calculate in multilayered structures such as those studied here.…”

Section: Atomic Magnetic Moments: Effect Of V Atomic Volumementioning

confidence: 99%

“…37 In our previous work, the V and Co thicknesses were restricted to a few ML ͑see Ref. 37͒ and the magnetic polarization of the V was found to be an interface effect.…”

Section: Atomic Magnetic Moments: Effect Of V and Co Thicknessesmentioning

confidence: 99%

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Interface effects, magnetic, and magneto-optical properties ofAl∕Co∕V∕MgO(100)structures

Huttel

Clavero²,

Laan

et al. 2008

Phys. Rev. B

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The magnetic and magneto-optical properties of Al/ Co/ V / MgO͑100͒ structures and the influence of the Co/ V interface for different thicknesses of the Co and V layers have been studied experimentally. From the element-specific hysteresis loops obtained by x-ray magnetic circular dichroism ͑XMCD͒ at the Co and V L 3 edges we find that the V layers are magnetically polarized antiparallel to the Co layers and that magnetization reversal occurs at the same magnetic field in both layers. The effect of the V atomic volume and the relative thicknesses of V and Co layers on the magnetic moments of the V and Co atoms are also studied. Contrary to what might be expected, the atomic magnetic moments of the V and Co atoms do not depend on the V atomic volume, however they depend strongly on the thicknesses of the V and Co layers. From the trend in the Co and V atomic magnetic moments as a function of Co and V thicknesses and the absence of any spectroscopic evidence for the formation of a VCo alloy, a long-range spin polarization of the V atoms is proposed. The extracted magneto-optical ͑MO͒ constants of V and Co as a function of photon energy clearly evidence a large amount of polarization in the V films in agreement with the XMCD results, which is indicative of the magnetic coupling between Co and V. The experimental MO results and simulations also show the strong influence of these polarized V layers in the MO properties of the complete system. These results, given the absence of spectroscopic evidence for the formation of a VCo alloy, support a long-range magnetization of the V atoms and a reduction of the Co atomic magnetic moments.

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Section: Element-specific Xmcd Hysteresis Loopssupporting

confidence: 79%

Section: Introductionmentioning

confidence: 99%

Section: Atomic Magnetic Moments: Effect Of V Atomic Volumementioning

confidence: 99%

“…37 In our previous work, the V and Co thicknesses were restricted to a few ML ͑see Ref. 37͒ and the magnetic polarization of the V was found to be an interface effect.…”

Section: Atomic Magnetic Moments: Effect Of V and Co Thicknessesmentioning

confidence: 99%

See 2 more Smart Citations

Interface effects, magnetic, and magneto-optical properties ofAl∕Co∕V∕MgO(100)structures

Huttel

Clavero²,

Laan

et al. 2008

Phys. Rev. B

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“…In the last decade great attention has been paid to the study of V / Co multilayers [1][2][3][4] due to the oscillatory exchange through V layers. These studies clearly indicated that a better understanding of the interface magnetism at the V / Co interface is mandatory to understand the physics of this system.…”

Section: Introductionmentioning

confidence: 99%

Structural and magnetic properties of V∕Cofcc and Cohcp∕V bilayers grown on MgO(100): A comparative study

Calleja

Huttel

Contreras

et al. 2006

Journal of Applied Physics

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Structural and magnetic properties of planar nanowire arrays of Co grown on oxidized vicinal silicon (111) A detailed study of the structure and magnetic properties of V / Co versus Co/ V bilayers grown on MgO͑001͒ substrates with cubic and hexagonal Co crystal structures is presented. Co is found to adopt fcc structure when grown on MgO͑001͒, while it adopts hcp structure when grown on V͑001͒. The different magnetocrystalline anisotropy associated with each structure gives rise to different magnetic properties for the otherwise equivalent symmetric Co-V bilayers.

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Organic Spin‐Valves and Beyond: Spin Injection and Transport in Organic Semiconductors and the Effect of Interfacial Engineering

Jang

Richter

2016

Advanced Materials

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Since the first observation of the spin-valve effect through organic semiconductors, efforts to realize novel spintronic technologies based on organic semiconductors have been rapidly growing. However, a complete understanding of spin-polarized carrier injection and transport in organic semiconductors is still lacking and under debate. For example, there is still no clear understanding of major spin-flip mechanisms in organic semiconductors and the role of hybrid metal-organic interfaces in spin injection. Recent findings suggest that organic single crystals can provide spin-transport media with much less structural disorder relative to organic thin films, thus reducing momentum scattering. Additionally, modification of the band energetics, morphology, and even spin magnetic moment at the metal-organic interface by interface engineering can greatly impact the efficiency of spin-polarized carrier injection. Here, progress on efficient spin-polarized carrier injection into organic semiconductors from ferromagnetic metals by using various interface engineering techniques is presented, such as inserting a metallic interlayer, a molecular self-assembled monolayer (SAM), and a ballistic carrier emitter. In addition, efforts to realize long spin transport in single-crystalline organic semiconductors are discussed. The focus here is on understanding and maximizing spin-polarized carrier injection and transport in organic semiconductors and insight is provided for the realization of emerging organic spintronics technologies.

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Induced V and reduced Co magnetic moments at the V/Co interface

Cited by 40 publications

References 60 publications

Interface effects, magnetic, and magneto-optical properties ofAl∕Co∕V∕MgO(100)structures

Interface effects, magnetic, and magneto-optical properties ofAl∕Co∕V∕MgO(100)structures

Structural and magnetic properties of V∕Cofcc and Cohcp∕V bilayers grown on MgO(100): A comparative study

Organic Spin‐Valves and Beyond: Spin Injection and Transport in Organic Semiconductors and the Effect of Interfacial Engineering

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