Rice (Oryza sativa), a monocotyledonous plant that does not cold acclimate, has evolved differently from Arabidopsis (Arabidopsis thaliana), which cold acclimates. To understand the stress response of rice in comparison with that of Arabidopsis, we developed transgenic rice plants that constitutively expressed CBF3/DREB1A (CBF3) and ABF3, Arabidopsis genes that function in abscisic acid-independent and abscisic acid-dependent stress-response pathways, respectively. CBF3 in transgenic rice elevated tolerance to drought and high salinity, and produced relatively low levels of tolerance to low-temperature exposure. These data were in direct contrast to CBF3 in Arabidopsis, which is known to function primarily to enhance freezing tolerance. ABF3 in transgenic rice increased tolerance to drought stress alone. By using the 60 K Rice Whole Genome Microarray and RNA gel-blot analyses, we identified 12 and 7 target genes that were activated in transgenic rice plants by CBF3 and ABF3, respectively, which appear to render the corresponding plants acclimated for stress conditions. The target genes together with 13 and 27 additional genes are induced further upon exposure to drought stress, consequently making the transgenic plants more tolerant to stress conditions. Interestingly, our transgenic plants exhibited neither growth inhibition nor visible phenotypic alterations despite constitutive expression of the CBF3 or ABF3, unlike the results previously obtained from Arabidopsis where transgenic plants were stunted.

Since the first observation of the spin-valve effect through organic semiconductors, efforts to realize novel spintronic technologies based on organic semiconductors have been rapidly growing. However, a complete understanding of spin-polarized carrier injection and transport in organic semiconductors is still lacking and under debate. For example, there is still no clear understanding of major spin-flip mechanisms in organic semiconductors and the role of hybrid metal-organic interfaces in spin injection. Recent findings suggest that organic single crystals can provide spin-transport media with much less structural disorder relative to organic thin films, thus reducing momentum scattering. Additionally, modification of the band energetics, morphology, and even spin magnetic moment at the metal-organic interface by interface engineering can greatly impact the efficiency of spin-polarized carrier injection. Here, progress on efficient spin-polarized carrier injection into organic semiconductors from ferromagnetic metals by using various interface engineering techniques is presented, such as inserting a metallic interlayer, a molecular self-assembled monolayer (SAM), and a ballistic carrier emitter. In addition, efforts to realize long spin transport in single-crystalline organic semiconductors are discussed. The focus here is on understanding and maximizing spin-polarized carrier injection and transport in organic semiconductors and insight is provided for the realization of emerging organic spintronics technologies.

Polyethylene glycols (PEGs) are products of condensed ethylene oxide and water that can have various derivatives and functions. Since many PEG types are hydrophilic, they are favorably used as penetration enhancers, especially in topical dermatological preparations. PEGs, together with their typically nonionic derivatives, are broadly utilized in cosmetic products as surfactants, emulsifiers, cleansing agents, humectants, and skin conditioners. The compounds studied in this review include PEG/PPG-17/6 copolymer, PEG-20 glyceryl triisostearate, PEG-40 hydrogenated castor oil, and PEG-60 hydrogenated castor oil. Overall, much of the data available in this review are on PEGylated oils (PEG-40 and PEG-60 hydrogenated castor oils), which were recommended as safe for use in cosmetics up to 100% concentration. Currently, PEG-20 glyceryl triisostearate and PEGylated oils are considered safe for cosmetic use according to the results of relevant studies. Additionally, PEG/PPG-17/6 copolymer should be further studied to ensure its safety as a cosmetic ingredient.

This document describes how a Mobile IPv6 Fast Handover can be implemented on link layers conforming to the IEEE 802.16e suite of specifications. The proposed scheme tries to achieve seamless handover by exploiting the link-layer handover indicators and thereby synchronizing the IEEE 802.16e handover procedures with the Mobile IPv6 fast handover procedures efficiently. Jang, et al.

Topological insulators are unique electronic materials with insulating interiors and robust metallic surfaces. Device applications exploiting their remarkable properties have so far been hampered by the difficulty to electrically tune the Fermi levels of both bulk and thin film samples. Here we show experimentally that single-crystal nanowires of the topological insulator Bi2Se3 can be used as the conduction channel in high-performance field effect transistor (FET), a basic circuit building block. Its current-voltage characteristics are superior to many of those reported for semiconductor nanowire transistors, including sharp turn-on, nearly zero cutoff current, very large On/Off current ratio, and well-saturated output current. The metallic electron transport at the surface with good FET effective mobility can be effectively separated from the conduction of bulk Bi2Se3 and adjusted by field effect at a small gate voltage. This opens up a suite of potential applications in nanoelectronics and spintronics.

Using long-distance lateral devices, spin transport near the interface of Si and its native oxide (SiO(2)) is studied by spin-valve measurements in an in-plane magnetic field and spin precession measurements in a perpendicular magnetic field at 60 K. As electrons are attracted to the interface by an electrostatic gate, we observe shorter average spin transit times and an increase in spin coherence, despite a reduction in total spin polarization. This behavior, which is in contrast with the expected exponential depolarization seen in bulk transport devices, is explained using a transform method to recover the empirical spin current transit-time distribution and a simple two-stage drift-diffusion model. We identify strong interface-induced spin depolarization (reducing the spin lifetime by over 2 orders of magnitude from its bulk transport value) as the consistent cause of these phenomena.

Organic semiconductors hold immense promise for the development of a wide range of innovative devices with their excellent electronic and manufacturing characteristics. Of particular interest are nonmagnetic organic semiconductors that show unusual magnetic field effects (MFEs) at small subtesla field strength that can result in substantial changes in their optoelectronic and electronic properties. These unique phenomena provide a tremendous opportunity to significantly impact the functionality of organic-based devices and may enable disruptive electronic and spintronic technologies. Here, we present an approach to vary the MFEs on the electrical resistance of organic-based systems in a simple yet reliable fashion. We experimentally modify the interfacial characteristics by adding a self-assembled monolayer between the metal electrode and the organic semiconductor, thus enabling the tuning of competing MFE mechanisms coexisting in organic semiconductors. This approach offers a robust method for tuning the magnitude and sign of magnetoresistance in organic semiconductors without compromising the ease of processing.

Evidence of spin precession and dephasing ("Hanle effect") induced by an external magnetic field is the only unequivocal proof of spin-polarized conduction electron transport in semiconductor devices. However, when spin dephasing is very strong, Hanle effect in a uniaxial magnetic field can be impossible to measure. Using a Silicon device with lateral injector-detector separation over 2 millimeters, and geometrically-induced dephasing making spin transport completely incoherent, we show experimentally and theoretically that Hanle effect can still be measured using a two-axis magnetic field.