Individual HfS<sub>3</sub>nanobelt for field-effect transistor and high performance visible-light detector

Xiong, Wenhui; Chen, Jin-Qiang; Wu, Xingcai; Zhu, Jun‐Jie

doi:10.1039/c4tc01039f

Cited by 42 publications

(62 citation statements)

References 23 publications

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“…On the basis of the design idea, Li et al once constructed an individual ZrS 2 nanobelt phototransistor and found its excellent visible-light response. 25 Subsequently, we found the broad visible-light responses of transition metal trichalcogenides (TMTs) such as ZrS 3 , 26 HfS 3 , 27 ZrSe 3 and HfSe 3 . 24 The ZrS 2 nanobelts were synthesized by a vacuum proylysis of ZrS 3 nanobelts.…”

Section: Introductionmentioning

confidence: 99%

Enhanced ultraviolet-visible light responses of phototransistors based on single and a few ZrS₃ nanobelts

Tao

2015

Nanoscale

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Phototransistors based on single and three ZrS3 nanobelts were fabricated on SiO2/Si wafers by photolithography and the lift-off technique, respectively, and their light-induced electric properties were investigated in detail. Both the devices demonstrate a remarkable photoresponse from ultraviolet to near infrared light. The photoswitch current ratio (PCR) of the single-nanobelt phototransistor is 13 under the illumination of 405 nm light with an optical power of 10.5 mW cm(-2) at a bias of 5 V, while the PCR of the three-nanobelt device is 210 under the illumination of 405 nm light with an optical power of 5.57 mW cm(-2) at a bias of 1 V. On comparison of the photoresponses under the same conditions, the latter is found to be superior to the former, and both the devices show a much better photoresponse than the reported flexible ZrS3-nanobelt-film photodetector.

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Section: Introductionmentioning

confidence: 99%

Enhanced ultraviolet-visible light responses of phototransistors based on single and a few ZrS₃ nanobelts

Tao

2015

Nanoscale

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“…169 As has been accomplished with ZrS3, HfS3 nanobelt photodetectors have been fabricated and studied with 405 nm wavelength light illumination. 75 Figure 9(g) shows an SEM image of a typical device. The measured ON/OFF current ratio is 337.5 with a dark current of 0.04 pA, responsivity of 110 mA W -1 and rise/decay time lower than 400 ms. Wavelength-dependent currentvoltage characteristics of HfS3 nanobelt photodetectors are shown in Figure 9(h-i).…”

Section: Optoelectronic Properties and Devicesmentioning

confidence: 99%

“…76 The responsivity measured for this material is 500 mA W -1 with a cutoff wavelength for strong photoresponsivity around 850 nm. 75,76 HfS3 is another p-type semiconductor from the TMTCs family with the same crystal structure as ZrS3 but where Hf atoms replace Zr. 168 It presents a bulk direct bandgap of 3.1 eV.…”

Section: Optoelectronic Properties and Devicesmentioning

confidence: 99%

“…Also during the 70s, it was shown that, like TMDCs, TMTCs can undergo a topotactic reaction with lithium making them viable materials as electrodes in lithium batteries. [62][63][64] There has been continued research in this direction 65,66 and more recent applications of TMTCs include their use as precursors in the synthesis of twodimensional (2D) materials (metal dichalcogenides and trioxides) 67,68 , anodes in photoelectrochemical cells [69][70][71] , photoelectrodes for hydrogen photoassisted generation 72,73 , UV-visible photodetectors 53,[74][75][76] and lastly, in thermoelectric devices 77,78 . In this review we discuss the unique properties of the group IV-V trichalcogenides and their use for applications in electronic devices and photodetection.…”

Section: Introductionmentioning

confidence: 99%

“…The above mentioned methods are used to grow single crystals and bulk powders, however, densified powder and pellets have been obtained under pressure 114,115 and by spark plasma sintering 77,78 . In addition, the as grown TMTC powders have been dispersed in a colloidal suspension and deposited as films by drop casting on different substrates 73,75 . Finally, TiS3 nanobelts have been grown as well from the sulfuration of Ti sheets or disks [70][71][72]116 and previously deposited Ti thin films 45,68 .…”

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Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

et al. 2017

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The isolation of graphene and transition metal dichalcongenides has opened a veritable world to a great number of layered materials which can be exfoliated, manipulated, and stacked or combined at will. With continued explorations expanding to include other layered materials with unique attributes, it is becoming clear that no one material will fill all the post-silicon era requirements. Here we review the properties and applications of layered, quasi-one dimensional transition metal trichalcogenides (TMTCs) as novel materials for next generation electronics and optoelectronics. The TMTCs present a unique chain-like structure which gives the materials their quasi-one dimensional properties such as high anisotropy ratios in conductivity and linear dichroism. The range of band gaps spanned by this class of materials (0.2 eV-2 eV) makes them suitable for a wide variety of applications including field-effect transistors, infrared, visible and ultraviolet photodetectors, and unique applications related to their anisotropic properties which opens another degree of freedom in the development of next generation electronics. In this review we survey the historical development of these remarkable materials with an emphasis on the recent activity generated by the isolation and characterization of atomically thin titanium trisulfide (TiS3).

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Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

Xie

Mak

Tao

et al. 2016

Adv Funct Materials

578

547

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1 of 41) 1603886However, despite its high absorption coefficient, [15] single-layer graphene can absorb only ≈2.3% of incident visible and infrared (IR) light due to its thinness, [16,17] which is undesirable for high performance photodetectors that require strong light absorption. Graphene's gaplessness also leads to short photocarrier lifetime in pure graphene, which is unfavorable for efficient photocurrent generation. [18][19][20] In addition to graphene, this family of materials contains an extremely large range of other 2D-layered materials that have recently attracted much research interest. [1][2][3][4][5][6][7][8] Similar to graphene, being atomically thin, these materials exhibit a wide range of unique electrical, optical, thermal, and mechanical properties that can never be seen in their three-dimensional (3D) bulk counterparts due to the dimensionality confinement effect and modulation in their band structures. [21,22] These 2D-layered materials can be metals, semiconductors, insulators, superconductors, topological insulators, or paramagnetic, diamagnetic, ferromagnetic, or anti-ferromagnetic, etc., depending on their composition and phases. [23,24] Among these materials, particular attention has been paid to 2D layered semiconductors thanks to their unique electronic [2,[24][25][26] and optoelectronic properties, [27,28] which arise from their appreciable bandgaps ranging from IR to UV and throughout the visible range.The optical and optoelectronic properties of 2D layered semiconductors are strongly dependent on their number of layers due to the quantum confinement effects in the out-of-plane direction and changes in symmetry. [29,30] This layer-dependent modulation of physical properties, such as bandgap structure, is particularly evident in the semiconducting transition metal dichalcogenides (TMDs) [2,7,29,31,32] and few-layer black phosphorus (BP). [33,34] Another effect induced by vertical quantum confinement is the increased absorption efficiency, which results from the strongly bound excitons due to the reduced thickness. [29,35,36] The atomic thickness of a 2D layered semiconductor also leads to high transparency [37] and good mechanical flexibility, [38] properties of particular interest for novel device applications such as flexible, wearable, or portable electronics. Despite their high transparency, 2D layered semiconductors can strongly interact with incident light, leading to enhanced photon absorption and electron-hole creation due to the existence of Van Hove singularities in their electronic density of states. [39] It has also been reported that 2D layered materials possess extraordinary elastic modulus and large strain (>10%) before rupture, [40][41][42][43] which allow for tuning their electronic and optical properties Following a significant number of graphene studies, other two-dimensional (2D) layered materials have attracted more and more interest for their unique structures and distinct physical properties, which has opened a window for realizing novel electronic or optoelectr...

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Individual HfS₃nanobelt for field-effect transistor and high performance visible-light detector

Cited by 42 publications

References 23 publications

Enhanced ultraviolet-visible light responses of phototransistors based on single and a few ZrS₃ nanobelts

Enhanced ultraviolet-visible light responses of phototransistors based on single and a few ZrS₃ nanobelts

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

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Individual HfS3nanobelt for field-effect transistor and high performance visible-light detector

Cited by 42 publications

References 23 publications

Enhanced ultraviolet-visible light responses of phototransistors based on single and a few ZrS3 nanobelts

Enhanced ultraviolet-visible light responses of phototransistors based on single and a few ZrS3 nanobelts

Electronics and optoelectronics of quasi-1D layered transition metal trichalcogenides

Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

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Product

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Individual HfS₃nanobelt for field-effect transistor and high performance visible-light detector

Enhanced ultraviolet-visible light responses of phototransistors based on single and a few ZrS₃ nanobelts

Enhanced ultraviolet-visible light responses of phototransistors based on single and a few ZrS₃ nanobelts