Indium-zinc-oxide nanobelts with superlattice structure

Abstract

Indium-zinc-oxide (IZO) nanobelts have been grown by a thermal evaporation-deposition method with ZnO and In2O3 powders as precursors. The nanobelts have a superlattice structure that is explained by the formation of In–O and In/Zn–O layers, which appears to favor the formation of nanorings. X-ray analytical methods indicate that the approximate composition of the compound is Zn4In2O7. Cathodoluminescence of the nanobelts in scanning electron microscope shows a dominant emission at 2.37 eV, which is suggested to be a characteristic band of the IZO structure.

Self‐Assembly and the Properties of a Highly Oriented Hierarchical Nanobelt–Nanoprism Array of Ternary Oxide Zn–In–O

“…Unlike the undoped and doped ZnO nanostructures, the CL spectra from individual In 2 O 3 (ZnO) m nanoprisms show no NBE emission in the ultraviolet region. A symmetric and broad emission centered at around 536 nm (2.313 eV) is exclusively observable, which is in good agreement with the previous reports on In 2 O 3 (ZnO) m nanostructures [15,16,18] and can be assigned to the recombination from the In-related centers. Since the visible emission of the nanobelt is quite complex and apparently contains more than one peak, we performed multipeak fitting for it.…”

“…The (optical) band gap of the superlattice structures can differ remarkably from that of a ZnO material. [18] To study the luminescence of the ZnO:In nanobelt and the In 2 O 3 (ZnO) m nanoprism, the transferred individual hierarchical nanostructures were probed by spatially resolved cathodoluminescence (CL) and the results are shown in Figure 4. For comparison, the representative CL spectrum of an undoped ZnO nanorod is also collected.…”

Optical spectroscopy characterization of Cu doped ZnO nano- and microstructures grown by vapor-solid method

“…Nevertheless important advances are being made in this issue and p-type conductivity has been already reported in ZnO doped with As or N [5,6]. Some other dopants have been used to modify a variety of material properties, for instance, elements of group III such as In, Ga, Al have been introduced to increase the density of carriers (electrons) and change the luminescent properties [7,8,9]. In the case of Cu, some studies have been done to investigate its positive influence on photocatalytic processes, as well as its utility for making CO sensors [10,11,12].…”

Dense vertical nanoplates arrays and nanobelts of indium doped ZnO grown by thermal treatment of ZnS–In2O3 powders

“…ZnO nanoplates have been also grown by molecular beam epitaxy [18] using a porous template. We have previously reported [13] that when ZnS is used as precursor, in absence of indium oxide, some spherical ZnO microstructures with the surface covered by nanoplates are obtained, along with wires and rods, while no structures were found to grow from pure ZnO [19] or from ZnO and In 2 O 3 [10] as precursor. It appears that, in the evaporation-deposition method of this work, the use of ZnS and In 2 O 3 favours the formation of the dense vertical nanowall structure on the pellet surface.…”

“…Thermal evaporation-deposition methods have been used to grow indium doped ZnO nanowires and other elongated nanostructures [1][2][3][4][5][6]. Also the thermal treatments can lead to the growth of nanowires or nanobelts of In-Zn-O compounds with superlattice structure, instead of a pure ZnO hexagonal phase with incorporated In impurity atoms [7][8][9][10]. ZnO powder or, in the case of doped nanostructures, a mixture of ZnO and a powder containing the dopant atoms, are normally used as precursors in evaporation-deposition growth methods.…”