Indium segregation in dilute indium-aluminium alloys

Kemerink, G. J.; Pleiter, F.

doi:10.1016/0036-9748(85)90213-3

Cited by 14 publications

(4 citation statements)

References 7 publications

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“…However, additional information strongly indicates that the TM-site, at which In probe atoms would be surrounded by 12 Al-atoms, is not occupied due to lack of affinity between atoms of indium and aluminum. Evidence for this lack of affinity includes the following: (a) molten In and Al are immiscible and In and Al have no intermediate phases; (b) the solid solubility of In in pure Al-metal has been measured to be only at the part-permillion level at elevated temperature [5]; (c) an extensive study of site preferences of indium solutes in Ni 2 Al 3 phases showed that the solutes prefer to occupy grainboundary sites rather than to be surrounded by eight Al-atoms in the first neighbor shell [6]. In the present study, point charge calculations were made that suggest that relative EFG's for the sites are very small (TM-site), intermediate in strength (Al(2) site), or twice larger (Al(1) or Al(3) sites).…”

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confidence: 98%

Site preferences of indium impurity atoms in intermetallics having Al3Ti or Al3Zr crystal structures

2007

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Site-fractions of indium impurity probe atoms occupying up to three inequivalent Al-sites in Al 3 Ti, Al 3 V and Al 3 Zr phases were measured using perturbed angular correlation of gamma rays (PAC). Sites were identified via characteristic nuclear quadrupole interactions. Ratios of site-fractions were measured in thermal equilibrium in the range 600 to 1,210 K. Arrhenius plots of the ratios were fitted with thermally activated expressions, yielding differences in vibrational entropies and siteenthalpies. Enthalpy differences were greatest for Al 3 Zr, ∼0.22 eV, and smaller for Al 3 Ti and Al 3 V, which is correlated with the excess volume of the transition-metal atom over the Al-atom. Vibrational entropy differences were small, in the range 0 to −0.25 k B .The site preference of dilute 111 In impurities in the Laves phase GdAl 2 was previously studied as a function of composition and temperature [1]. Occupied Gdand Al-sites were determined through measurements of quadrupole interactions using the method of perturbed angular correlation of gamma rays (PAC). In that study, 111 In impurity probe atoms were observed to switch between sites of different elements. The ratio of site fractions of indium solutes on Gd-and Al-sites was found to be thermally activated, with solutes transferring from the Gd-to Alsublattice with increasing temperature. Transfer takes place heuristically through the reaction In Gd + Al Al ⇔ In Al + Al Gd , in which Al Gd is an antisite atom that is either created or destroyed. Applying the law of mass action to the reaction leads to [In Al ][Al Gd ])/[In Gd ] = exp(−G tr /k B T), in which G tr is the free energy of transfer

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confidence: 98%

Site preferences of indium impurity atoms in intermetallics having Al3Ti or Al3Zr crystal structures

2007

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“…[13,20] By extending the annealing time, a new diffraction peak located at 2θ ≈ 32.8 • appears with an annealing duration of 3 hours as shown in Fig. 3 Interestingly, previous investigations by Kemerink et al showed that such an orientation transition of embedded In nanoparticles in Al-In system containing 125 at.% ppm indium is determined by annealing temperature, which equals 573 K. [21] However, in our experiments, the structural transition happens at 438 K, i.e., 135 K or less. Based on the observed results, it can be assumed that the change of crystallographic orientation for In nanoparticles in Al is sizedependent.…”

Section: Resultsmentioning

confidence: 83%

Structural and size evolution of indium nanoparticles embedded in aluminum synthesized by ion implantation

Yan¹,

Li²,

Hu³

et al. 2017

Chinese Phys. B

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The structural and the size evolution of embedded In nanoparticles in Al synthesized by ion implantation and subsequent annealing are experimentally investigated. The average radius r of In nanoparticles is determined as a function of annealing time in a temperature range between 423 K and 453 K. The structural transition of In nanoparticles with the crystallographic orientation In (200)[002] Al (200)[002] is observed to change into In (111)[110] Al (002) [110] with a critical particle radius between 2.3 nm and 2.6 nm. In addition, the growth of In nanoparticles in the annealing process is evidently governed by the diffusion limited Ostwald ripening. By further analyzing the experimental data, values of diffusion coefficient and activation energy are obtained.

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“…[11] For In Swanson et al [12] found a solubility of 0.02 at. % at 600 C, whereas Kemerink et al [13] determined values about two times larger.…”

Section: Introductionmentioning

confidence: 91%

“…For Sn the maximum solubility lies between 0.026 at.% and 0.1 at.% . For In Swanson et al found a solubility of 0.02 at.% at 600 °C, whereas Kemerink et al determined values about two times larger.…”

Section: Introductionmentioning

confidence: 96%

The Influence of Trace Elements (In, Sn) on the Hardening Process of Al–Cu Alloys

Lotter

Petschke

Staab

et al. 2018

Physica Status Solidi (a)

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Adding trace elements (Cd, In, Sn) to Al‐Cu‐based alloys can significantly improve their strength by the growth of small and finely distributed θ′ precipitates. However, the underlying atomic mechanisms of their nucleation are so far only superficially understood. We follow the precipitation process, that is changes in the microstructure, by different methods: differential scanning calorimetry (DSC), giving information on formation and dissolution of precipitates, 3D atom probe tomography (3DAP), giving information on size and density of precipitates and finally, positron annihilation lifetime spectroscopy (PALS), being sensitive especially to quenched‐in vacancies and their interaction with alloying elements. By the use of these complementary methods we obtain information on vacancy binding to the alloying elements and also on structure, kind and distribution of precipitates while correlating this with hardness measurements.

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Indium segregation in dilute indium-aluminium alloys

Cited by 14 publications

References 7 publications

Site preferences of indium impurity atoms in intermetallics having Al3Ti or Al3Zr crystal structures

Site preferences of indium impurity atoms in intermetallics having Al3Ti or Al3Zr crystal structures

Structural and size evolution of indium nanoparticles embedded in aluminum synthesized by ion implantation

The Influence of Trace Elements (In, Sn) on the Hardening Process of Al–Cu Alloys

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