Indium Gallium Zinc Oxide FinFET Compared with Silicon FinFET

Abstract

Indium gallium zinc oxide fin-field effect transistor (IGZO FinFET) characteristics are investigated and then compared with Zinc oxide fin-field effect transistor (ZnO FinFET) and the Silicon fin-field effect transistor (Si FinFET). This was done using 3D simulation. The threshold voltage for Si, ZnO, and IGZO is 0.75 V, 0.30 V and 0.05 V respectively. The silicon device has the highest transconductance (5.0 x 10-7 S) and performs better than the other devices because it has less fixed charge defects. IGZO has the second-best value of Gm (3.6 x 10-7 S), ZnO has the least value of Gm (3.4 x 10-7 S). Si device has the least drain current (IDS) value of 2.0 x 10-7 A, ZnO device has a better IDS value of 6.2 x 10-6 A while IGZO device has the best IDS value of 1.6 x 10-5 A. IGZO is better than Si by two (2) order magnitude. The field effect mobility is 50.0 cm2/Vs for all three devices.

Impact of the geometric parameters on the performance of silicon TG SOI N FinFET 5nm

“…Their results confirm that decreasing the channel length or increasing the fin height improves the RF parameters. Mostak Ahmed et al in 2021 [28] have simulated the electrical characteristics of a 3-D silicon on insulator (SOI) triple gate (TG) n FinFET with a channel length of 5 nm using different gate dielectric materials. The results of their simulation confirm that the high k dielectric materials have a better option in the fabrication of TG FinFET device.…”