Indium Dopant Concentration Effects on Zinc Oxide Nanowires

Abstract

We report in detail the effects of varying the concentration of indium as a dopant in ZnO on the structural, vibrational, and optical properties of ZnO nanowires. A highly versatile route to dope zinc oxide nanowires by using vapor–liquid–solid growth is employed. It is observed that the ratio of indium in ZnO reactant has a large impact on properties of indium-doped ZnO nanowires. Lower indium concentration reveals better transparency while higher concentrations of indium shows segregation of indium-rich domains within the doped nanocrystals. Photoluminescence measurements demonstrated band gap tuning and a smaller UV to deep emission ratio for doped nanowires. Phonon vibrational modes along with origin of observed anomalous vibrational modes induced due to indium incorporation in ZnO are discussed. An average transmittance of more than 90% is observed for a wide range of spectra in both visible and near-IR regions as compared with indium tin oxide. The lowest resistivity of 1.2 × 10–3 Ω·cm was achieved for ZnO films doped with 7% indium oxide. These dramatically superior optical and electrical properties make it a superior candidate for various technological applications.

W-Doped ZnO Photocatalyst for the Degradation of Glyphosate in Aqueous Solution

“…However, the doping with tungsten causes a decrease in the intensity of the peaks-as the tungsten load increases, the intensity of the peaks decreases. This behavior is consistent with literature data dealing with ZnO doped with different metals [51,52]. In detail, the decrease of Raman bands may be explained with the insertion of W into the ZnO lattice, which induces the change of the local environment around the host, altering the normal lattice symmetry [53] and without changing the hexagonal structure of ZnO.…”

pH Controlled Nanostructure and Optical Properties of ZnO and Al-Doped ZnO Nanorod Arrays Grown by Microwave-Assisted Hydrothermal Method

“…This is achieved by trivalent extrinsic dopant atoms such as Al, Ga, and In, acting as donors when substituting for Zn sites in the ZnO lattice. Extrinsic doping proved to play a crucial role in improving the properties of ZnO NRs [ 24 , 25 , 26 , 27 , 28 ]. Among these, Al dopants can reach very high n-type conductivity without deterioration in optical transmittance [ 29 , 30 , 31 ], and therefore lend themselves to be ideal candidates for such use.…”

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“…[ 29 ] This was later confirmed by Farid et al., who obtained an intense near‐band‐edge emission after a precise indium doping. [ 30,31 ] Furthermore, Wei et al. reported obvious enhancement both in photoluminescence excitation and emission spectra of InZnO nanowires.…”

“…[29] This was later confirmed by Farid et al, who obtained an intense near-bandedge emission after a precise indium doping. [30,31] Furthermore, Wei et al reported obvious enhancement both in photoluminescence excitation and emission spectra of InZnO nanowires. [32] However, despite the relentless efforts to improve the optical properties of InZnO nanowires, the exploration to construct InZnO nanowire-based UV photodetectors still remains rare.…”