A novel Janus Fe3C/N-CNF@RGO electrode was successfully constructed, which realizes the co-existence of chemical immobilization, catalytic ability, and physical barrier in 3D conductive networks, enabling robust cycling stability of Li–S battery
Ultraviolet (UV) photodetectors play an important role in numerous commercial and scientific applications. The UV photodetectors based on binary‐cation indium zinc oxide (InZnO) thin films exhibit great performance enhancement, compared with their single‐cation counterparts. However, UV photodetectors based on 1D InZnO nanowires could potentially exhibit more superior optoelectrical performance, due to the large surface‐to‐volume ratio and favorable carrier transport characteristics of nanowires. This work has combined combustion synthesis with electrospinning technique to efficiently fabricate InZnO nanowire‐based UV photodetectors. At the annealing temperature of 375 °C, the newly designed InZnO nanowire photodetectors exhibit excellent photoelectric performance under the irradiation of 310 nm UV light, including a photo‐to‐dark current ratio of 1.2 × 104, a photo responsivity of 2.8 × 103 A W–1, and a high detectivity of 2.4 × 1016 Jones. This study not only demonstrates the opportunity to construct new‐generation transparent electronics based on 1D metal oxide nanowires but also sheds new light on how to further decrease the annealing temperature of metal oxide nanowire devices for low‐temperature fabrication processes.
In2O3 nanofibers
usually suffer a high off-current
and consequent low on/off current ratio, as well as a large negative
threshold voltage (V
th). Furthermore,
regarding Zn doped binary-cation In2O3 nanofibers,
severe thermal diffusion of Zn elements can result in deteriorated
electrical performance when annealed at high temperature. Here, we
applied an electrospinning technique to obtain ternary-cation IAZO
nanofibers with controllable V
th and chemical
stoichiometry. The presence of the Al element in IAZO nanofibers can
lead to more superior microstructure with improved uniformity, lower
surface defect, and superior metal–oxide–metal lattice
at high annealing temperature. Consequently, our Al-doped ternary-cation
IAZO devices exhibited an improved on/off current ratio of 107 and a high electron mobility of ∼10 cm2 V–1 s–1. Moreover, the electron
mobility can be increased to 30 cm2 V–1 s–1 in our low-voltage operated FETs with high-k AlO
x
as the dielectric layer,
which can be envisioned to exhibit vast implications for high-performance
transparent electronics.
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