Indium and gallium oxynitrides prepared in the presence of Zn2+ by ammonolysis of the oxide precursors obtained via the citrate route

Miyaake, Azumi; Masubuchi, Yuji; Takeda, Takashi; Kikkawa, Shinichi

doi:10.1016/j.materresbull.2009.10.008

Cited by 16 publications

(12 citation statements)

References 21 publications

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“…For these materials, mixtures of ZnO / Ga 2 O 3 were used as starting material [14,16,21]. The use of amorphous oxide obtained by the citrate route [13] [60:40] in mass, the mixture was heated at 90 °C under continuous stirring and the obtained resin was submitted to two thermal treatments in air: (i) pre-treatment at 300 °C for 4 h to eliminate the organic matter (ii) annealing at 600 °C for 2 h to obtain the desired phase.…”

Section: Oxinitreto De Zinco E Gálio Foi Sintetizado Por Meio Da Nitrmentioning

confidence: 99%

“…For instance, Li + doping is expected to change its gas sensing behavior and electrical properties [8] whereas Mn 2+ -, Cr 3+ -, and Fe 3+ -doped gallium oxynitrides were studied to obtain a diluted magnetic semiconductor [9][10][11]. The doping of "GaON" Zinc-gallium oxynitride powders: effect of the oxide precursor synthesis route (Pós de oxinitreto de zinco e gálio: efeito da rota de síntese do óxido precursor) with In 3+ and/or Zn 2+ was also reported for water splitting under visible light irradiation [12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

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Zinc-gallium oxynitride powders: effect of the oxide precursor synthesis route

et al. 2013

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Zinc-gallium oxynitride powders (ZnGaON) were synthesized by nitridation of ZnGa 2 O 4 oxide precursor obtained by polymeric precursors (PP) and solid state reaction (SSR) methods and the influence of the synthesis route of ZnGa 2 O 4 on the final compound ZnGaON was investigated. Crystalline single phase ZnGa 2 O 4 was obtained at 1100 o C / 12 h by SSR and at 600 o C / 2 h by PP with different grain sizes and specific surface areas according to the synthesis route. After nitridation, ZnGaON oxynitrides with a GaN würtzite-type structure were obtained in both cases, however at lower temperatures for PP samples. The microstructure and the specific surface area were strongly dependent on the oxide synthesis method and on the nitridation temperature (42 m 2 g -1 and 5 m 2 g -1for PP and SSR oxides treated at 700 °C, respectively). The composition analyses showed a strong loss of Zn for the PP samples, favored by the increase of ammonolysis temperature and by the higher specific surface area.

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Section: Oxinitreto De Zinco E Gálio Foi Sintetizado Por Meio Da Nitrmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Zinc-gallium oxynitride powders: effect of the oxide precursor synthesis route

et al. 2013

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“…Such compounds have been prepared by the ammonolysis of metal oxide mixtures; however, the variation of compounds is still very limited, partly due to the poor kinetics for the ammonolysis reaction. Ammonolysis of amorphous oxide mixtures prepared through a citrate route improved the problem to develop new oxynitrides such as RE 2 Ta 2 O 5 N 2 pyrochlores (RE = Nd~Gd), RETa(O,N,□) 4 disordered fluorites (RE = Dy~Yb) 12,13 , wurtzite-type gallium oxynitride compounds doped with various transition metal cations [14][15][16][17][18][19] , and europium doped aluminum oxynitride. 20,21 Double metal oxides, especially nanopowders of such, would also contribute to enhance the ammonolysis reaction to obtain new oxynitrides.…”

Section: Faculty Of Engineering Hokkaido University N13 W8 Kita-kumentioning

confidence: 99%

Ammonolysis of HTiNbO5–n-Propylamine Intercalation Compound

Masubuchi¹,

Yamakami²,

Motohashi³

et al. 2011

Chemistry Letters

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The ammonolysis reaction to form (Ti,Nb)N was enhanced by the use of HTiNbO5–n-propylamine intercalation compound as a starting material and compared with that for a simple mixture of TiO2 and Nb2O5. The ammonolysis product formed at 1200 °C was a superconductor (Tc = 15 K) with a rock-salt crystal structure having many structural defects along the stacking direction of the intercalation compound.

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“…Especially with the discovery of new materials that can be used as light sensors. Indium oxynitride (InNO) can be considered as a new material with properties between semiconductor indium nitride (InN) and insulator indium oxide (In 2 O 3 ) [1,2] . InNO is a semitransparent material of pale yellow color and has a wide band gap in the range 3.4-3.6 eV (nearest indium oxide), which makes it an excellent candidate to be employed in photo sensors in the ultraviolet region.…”

Section: Introductionmentioning

confidence: 99%

Study and characterization of indium oxynitride photoconductors

2013

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Multifunctional materials are a new class of thin films and coatings. These materials show interesting characteristics for application in many scientific areas, in special electronic and photonic technologies. These characteristics include sensitivity for thermal, light, mechanical, chemical and other influences, high resistivity, high electrical isolation and transparence in visible range. Recently it was obtained a new oxide type that combines oxygen, nitrogen and indium: the indium oxynitride. In this work, we study the deposition of indium oxynitride by reactive sputtering for application in photoconductor sensors. The deposition processes were performed in a home build magnetron sputtering system, using a four-inch pure In target, nitrogen and oxygen as process gases. The pressure was kept constant at 10 mtorr and the RF power (13.56 MHz) was constant at 250 W. The photoconductors were made with these thin films. The photoelectric detectors were analyzed by IxV (current versus voltage) analyses. The IxV analysis presented a low leakage current (10 -8 A). The photoelectric effect was observed from the difference between the case with emitted light and dark currents. It increased around 140 times, under illumination of a halogen lamp. The Hall Effect measurements indicated that the films were n-type semiconductors. The increase in the oxygen concentration added in the plasma, promoted the change in the character of these thin films from conductor to semiconductor material.

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Indium and gallium oxynitrides prepared in the presence of Zn2+ by ammonolysis of the oxide precursors obtained via the citrate route

Cited by 16 publications

References 21 publications

Zinc-gallium oxynitride powders: effect of the oxide precursor synthesis route

Zinc-gallium oxynitride powders: effect of the oxide precursor synthesis route

Ammonolysis of HTiNbO5–n-Propylamine Intercalation Compound

Study and characterization of indium oxynitride photoconductors

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