INDIRECT ELECTRON DRIFT VELOCITY VERSUS ELECTRIC FIELD MEASUREMENT IN GaAs

Bastida, E.M.; Fabri, G.; Svelto, V.; Vaghi, F.

doi:10.1063/1.1653465

Cited by 28 publications

(3 citation statements)

References 5 publications

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“…can be employed as FM amplifiers [I]- [3] or as FM demodulators [4], [ 5 ] . IMPATI diode oscillators were experimentally shown by Isobe et nl.…”

Section: Abstract-amentioning

confidence: 99%

“…IMPATI diode oscillators were experimentally shown by Isobe et nl. [3] to perform well in the injection-locked mode, yielding typically, for a 15-dB gain at 11 GHz, a signal-to-noise degradation of less than 2 dB over a bandwidth of 4 MHz.…”

Section: Abstract-amentioning

confidence: 99%

“…The measurement technique described by Bastida et ai. [3] makes possible the determination of the velocity-field characteristic of GaAs for the electric fields above 15 kV/cm from the current-voltage characteristic of a Gunn diode measured while a domain is in transit. The experimental D = o(E) characteristic determined by this method does not saturate and continues to decrease slowly for the electric fields up to 90 kV/cm.…”

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Experimental nonsaturating velocity-field characteristic of GaAs

Pokorný¹,

Jelínek²

1972

Proc. IEEE

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“…can be employed as FM amplifiers [I]- [3] or as FM demodulators [4], [ 5 ] . IMPATI diode oscillators were experimentally shown by Isobe et nl.…”

Section: Abstract-amentioning

confidence: 99%

Section: Abstract-amentioning

confidence: 99%

mentioning

confidence: 99%

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Experimental nonsaturating velocity-field characteristic of GaAs

Pokorný¹,

Jelínek²

1972

Proc. IEEE

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Magnetoresistance of avalanching semiconductor diodes

Lanyon

1974

Phys. Stat. Sol. (a)

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The magnetoresistance of avalanching semiconductor diodes is analyzed in terms of the Lorentz force acting on a Maxwellian distribution of carriers, assuming a scattering mechanism characterized by a constant mean free path. At low current levels, the magneto‐resistance only arises in the generation region close to the junction interface, and is a result of the reduction in the hot carrier temperature caused by the deflection of the carriers from their original trajectories. The fractional change in the maximum field strength in the junction to maintain the carrier temperature at its original value is shown to be ΔEm/Em = 0.388 (μ(Em) H)2 where μ(Em) is the conductivity mobility corresponding to the average scattering rate of carriers in equilibrium with the maximum field in the junction. This magnetoresistance may be determined through measurement of the change in reverse bias required to maintain a constant avalanche current through the device. At high current levels a correction must be made for the magnetoresistance of the bulk semiconductor in series with the exhaustion region. From measurements on a series of diodes with different breakdown field strengths, it is possible to measure the field dependence of the scattering rate of the majority carriers on the lower doped side of the junction at field strengths of interest in device operation. The predictions of the paper are in good agreement with experimental observations.

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Gallium arsenide (GaAs), electron drift velocity and diffusion coefficient

Group IV Elements, IV-IV and III-V Compounds. Part B - Electronic, Transport, Optical and Other Properties

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INDIRECT ELECTRON DRIFT VELOCITY VERSUS ELECTRIC FIELD MEASUREMENT IN GaAs

Abstract: A measurement of the drift velocity versus electric field in GaAs has been determined for electric fields between 15 and 90 kV/cm. The experimental values were obtained from the measurement of the current-voltage characteristic of a Gunn diode, done during the transit time of a domain.

Cited by 28 publications

References 5 publications

Experimental nonsaturating velocity-field characteristic of GaAs

Experimental nonsaturating velocity-field characteristic of GaAs

Magnetoresistance of avalanching semiconductor diodes

Gallium arsenide (GaAs), electron drift velocity and diffusion coefficient

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