Magnetoresistance of avalanching semiconductor diodes

Lanyon, H. P. D.

doi:10.1002/pssa.2210210121

Cited by 4 publications

(3 citation statements)

References 14 publications

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“…This is in agreement with the absence of the effect of positive magnetoresis tance at high temperatures, when the mobility of charge carriers is small. In agreement with [14][15][16][17], the magnetic field hinders the impact's ionization, which results in an increase in the resistance of the n⎯Si/SiO 2 /Ni nanostructure.…”

Section: Enhanced Magnetoresistive Effect In the Arrays Of Nickel Nanorods On Silicon Substratessupporting

confidence: 53%

Enhanced magnetoresistive effect in the arrays of nickel nanorods on silicon substrates

Fedotova¹,

Ivanov

Ivanova

et al. 2015

Russ Microelectron

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It is shown that the magnetoresistive properties of n-Si/SiO 2 /Ni, nanostructures containing nan ogranular nickel rods in a SiO 2 layer's vertical pores substantially differ from the similar properties in the ear lier studied nanogranular Ni films electrodeposited onto the n-Si plates. From the point of view of the elec trophysical properties, the nanostructures studied are analogous to a system of two Schottky Si/Ni diodes, which are connected to each other. The magnetoresistance of such structures has been studied in the temper ature range from 2 to 300 K and the magnetic field range of up to 8 Tl. It is established that at temperatures of 17-27 K the structures possess a positive magnetoresistive effect, whose value depends on the transverse voltage applied to the structure and increases with a decrease in the longitudinal (along the rods) current intensity. At a current of 100 nA, the relative magnetoresistance in the field of 8 Tl increases from 500 to 35000% by an increase in the transverse voltage from 0 to -2 V. The observed magnetoresistive effect is asso ciated with the influence of the magnetic field on the processes of impact ionization of impurities resulting in an avalanche breakdown of the Ni/Si Schottky barrier. Thus, the possibility of controlling the magnetoresis tive effect in n-Si/SiO 2 /Ni template structures by applying an additional (transverse) electric field to the nanostructure between the silicon substrate (as the third electrode) and nickel rods is proven.

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Section: Enhanced Magnetoresistive Effect In the Arrays Of Nickel Nanorods On Silicon Substratessupporting

confidence: 53%

Enhanced magnetoresistive effect in the arrays of nickel nanorods on silicon substrates

Fedotova¹,

Ivanov

Ivanova

et al. 2015

Russ Microelectron

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“…Under the assumptions of an isotropic band structure characterized by a single effective mass m* and a hot carrier distribution which is an isotropic drifted Maxwellain characterized by a single effective electron temperature, it can be shown [6] that the fractional change in breakdown voltage is given by the expression…”

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confidence: 99%

“…These measurements determine the change in peak electric field strength required to maintain the multiplication coefficient constant when a transverse magnetic field is applied, and thus determine the average time between scattering events for those carriers which are causing the multiplication [6] .…”

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confidence: 99%

Electron transport in avalanching GaAs diodes

Lanyon

1982

IEEE Electron Device Lett.

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Magnetoresistance measurements on avalanching GaAs diodes lead to an estimate of 1.6 X sec for the scattering time of avalanching electrons at 300K. This is consistent with the time recently calculated by Monte Carlo techniques. It confirms that impact ionization by electrons in GaAs is initiated by carriers that make several collisions in the process rather than by ballistic carriers which impact ionize without any interaction with phonons. N .A RECENT issue of Electron Device Letters, two articles [ 1, 21 discussed the application of Monte Carlo techniques [3, 41 to calculate the ionization coefficient of electrons in gallium arsenide. The Monte Carlo technique is a classical numerical algorithm which computes the progress in position and momentum space of electrons injected into a system at a known point at a known time. The only uncertainty lies in the statistics of scattering by competing processes which are simulated by suitable algorithms using a pseudorandom number generator. In each case the electron is scattered from one known k-state to another, allowing its progress in momentum and position space to be calculated exactly. By charting the progress of a number of electrons injected with a thermal distribution in momentum space, it is possible to calculate the drift and diffusion of electrons as they move in a high electric field. Because of the deterministic nature of the algorithms, the technique does not take into account the inherent uncertainty in the energy of the short-lived states which results when the scattering rate is extremely large. Neither does it take into account the necessary uncertainty in momentum that results from the localization of the point charge. At intermediate field strengths this is not particularly important, but at the field strengths of approximately 4 x 10' V/cm in avalanche breakdown, it does make the results of a Monte Carlo calculation suspect, as Capasso et al. point out.In this article we present previously unpublished experimental results [SI on the magnetoresistance of avalanching GaAs p+-n and Schottky diodes with the electric field in the < 100> direction. These measurements determine the change in peak electric field strength required to maintain the multiplication coefficient constant when a transverse magnetic field is applied, and thus determine the average time between scattering events for those carriers which are causing the multiplication [6] .Under the assumptions of an isotropic band structure characterized by a single effective mass m* and a hot carrier distribution which is an isotropic drifted Maxwellain characterized by a single effective electron temperature, it can be shown [6] that the fractional change in breakdown voltage is given by the expressionwhere p is the "conductivity mobility" of the avalanching carriers. While these assumptions are not satisfied in the case of hot electron transport in GaAs at these field strebgths, the magnetoresistance, is the only experimental technique to give an estimate of the order of )magnitude for the scatter...

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Magnetoresistance of silicon diodes reverse biased into breakdown

Lanyon

Neal

1974

Phys. Stat. Sol. (a)

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The magnetoresistive behaviour of silicon diodes reverse biased into breakdown is described. The magnetoresistive behaviour of avalanching p+n diodes may be explained in terms of a field-dependent electron mobility with p ( E ) cc 1/E, consistent with the saturation of drift velocity observed by other workers' a t lower field strengths. The teniperat.ure dependence of the hot electron mobility is in excellent agroement with that observed for the saturated electron drift velocity and with theory. The absolute magnitude of the mobility is consistently approximately 20% too high, probably as a result of the simplification of the physical model to make i t mathematicdly tractable. I n contrast to the case of thermal elect'rons moving in the (111) direction, the transverse magnetoresktance of hot electrons is larger than the longitudinal magnetoresistance. The hot hole mobility, determined by measurements on n + p diodes, shows a scattering rate increasing rapidly with increasing electric field. This is interpreted as being due to the onset of a new scattering mechanism in this field rangeprobably scattering of holes from the heavy hole band to the split off valence band, V,. This model is in good agreement with the field dependence of the impact ionization coefficient determined from photomultiplication expcriments. Diodes which break down by tunneling show a completely different magnetoresistive behaviour.Es wird das Magneto-Widerstandsverhalten von in Sperrichtung bis in den Durchschlagsbereich vorgespannten Siliziumdioden beschrieben. Das Magneto-Widerstandsverhalten von Lawinen-p'n-Dioden laBt sich rnit einer feldabhangigen Elektronenbeweglichkeit mit p ( E ) oc 1/E erklaren, was rnit der Sattigung der von anderen Autoren bei niedrigeren Feld-stBrken beobachteten Sattigung ubereinstimmt. Die Temperahrabhangigkeit der Beweglichkeit der heil3en Ladungstrager befindet sich in ausgezeichneter Ubereinstimmung niit der, die fur die Elektronen-Sattigungsgeschwindigkeit beobachtet wurde und rnit der Theorie. Die absolute GroBe der Beweglichkeit ist stets ungefahr 20% zu hoch, wahrscheinlich als Ergebnis der zur mathematischen Handhabung notwendigen Vereinfachnngen des physikalischen Modells. I m Gegensatz zum Fall der thermischen Elektronen, die sich in der ( 1 11)-Richtung bewegen, ist der transversale Magnetowiderstand heiBer Elektronen groBcr als der longitudinale. Die durch Messungen an n'p-Dioden bestimmte Beweglichkeit der heiWen Locher zeigt eine rnit steigendem Feld stark ansteigende Streurate. Dies wird mit dem Einsatz eines neuen Streumechanismus in diesem Feldbereich interpretiert, wahrscheinlich Streuung von Lochern aus dem Band der schweren Lijcher zum abgespaltenen Vnlenzzustand V,. Dieses Model1 befindet sich in guter Ebereinstimmung mit der Feldabhangigkeit des StoBionisationskoeffizienten, der aus Photovervielfachungsexperimenten bestimmt wurde. Dioden, die durch Tuuneln durchschlagen, zeigen ein vollstindig verschiedenes Magnetowiderstandsverhalten.

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Magnetoresistance of avalanching semiconductor diodes

Cited by 4 publications

References 14 publications

Enhanced magnetoresistive effect in the arrays of nickel nanorods on silicon substrates

Enhanced magnetoresistive effect in the arrays of nickel nanorods on silicon substrates

Electron transport in avalanching GaAs diodes

Magnetoresistance of silicon diodes reverse biased into breakdown

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