Indentation punching through thin (011) InP

Largeau, L.; Patriarche, G.; Rivière, A.; Rivière, J.P.; Bourhis, E. Le

doi:10.1023/b:jmsc.0000012926.63109.00

Cited by 16 publications

(12 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…When the load is increased, indentation pile-ups progressively vanish around the indent site yielding loss of geometric similarity. Thereafter, the infinite half-space assumption commonly used in indentation mechanics needs to be reconsidered [6]. A model for plastic punching was proposed for the {111}A and B orientations of specimens where plastic flow occurs in three diamond-shaped columns.…”

Section: Discussionmentioning

confidence: 99%

“…Unfortunately, instrumented nanoindentation at elevated temperature is very difficult to perform [3] and most studies have been undertaken at room temperature (RT). Furthermore, contact mechanics has been developed for semi-infinite half-space models [4], an assumption that is not appropriate when the size of the plastic zone approaches one of the dimensions of the object [5,6]. Thin self-standing structures are expected to show mechanical behaviour quite different from that of bulk samples.…”

Section: Introductionmentioning

confidence: 99%

“…In a recent study on (011) surfaces we observed deviations from the semi-infinite plastic solid behaviour once material flow through thin specimen could occur [6,7]. The (011) surfaces were chosen because plastic slip occurs in {111} planes normal to the (011) indented surface [8,9].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Indentation deformation of thin {111} GaAs and InSb foils: influence of polarity

Patriarche

Largeau

Rivière

et al. 2005

Philosophical Magazine Letters

Self Cite

View full text Add to dashboard Cite

{111} GaAs and InSb thin foils have been deformed by a Vickers indenter at different temperatures between room temperature and 370 C and under loads ranging from 0.4 to 1.9 N. Interferometry was used to observe the indented and opposite faces of thin foils and to analyse the plastic flow throughout the samples. Attention was paid to the polarity (A or B) of the specimens, as GaAs as well as InSb are known to show large difference between and dislocation mobilities. A model considering the influence of polarity is proposed to describe the material flow throughout thin samples and analyse differences observed between both semiconductors.

show abstract

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Indentation deformation of thin {111} GaAs and InSb foils: influence of polarity

Patriarche

Largeau

Rivière

et al. 2005

Philosophical Magazine Letters

Self Cite

View full text Add to dashboard Cite

show abstract

“…5 Size effect Contact mechanics has been developed for semi-infinite half space [20], this assumption being not fulfilled when the size of the plastic zone becomes of the order of one of the dimensions of the object and then size effects are expected [27][28][29]. For instance, thin structures are expected to show a mechanical behaviour quite different from that of a bulk.…”

mentioning

confidence: 99%

“…For instance, thin structures are expected to show a mechanical behaviour quite different from that of a bulk. In the field of semiconductors recent studies showed that indeed, when the contact depth to thickness ratio h c / t approaches 3 %, a free standing film cannot be considered as a semi-infinite half space anymore and plastic deformation of the free bottom side is to be taken into account [28]. These length-scale effects may have important implication in the growing of mismatched layers for optoelectronic devices [9].…”

mentioning

confidence: 99%

Nanoindentation response of compound semiconductors

Bourhis

Patriarche

2007

Phys. Status Solidi (c)

Self Cite

View full text Add to dashboard Cite

The paper reviews the nanoindentation behaviour of III-V semiconductors under concentrated load and its implication for optoelectronic-device design. We consider first, fundamental aspects involved into the mechanical resistance to contact loading of semiconductor single crystals (elastic-plastic transition, indentation strain, hardness-yield relationship). The paper then describes recent applicative studies aimed at improving the heterostructure quality used in optoelectronic applications and emphasizes the so-called mechanical design (alloying and compliant substructure).1 Introduction Mechanical properties of semiconductors have been surveyed for many years (for a review refer to [1]) as these data have been very useful to improve the handling of the materials during device processing. Compression test has been used extensively to study the plastic behaviour as a function of temperature. Going to temperatures close and below the brittle-ductile transition (typically below 0.3-0.5 T m where T m is the melting temperature), confining pressure and predeformation are necessary to prevent samples fracture. In this domain, indentation tests become very useful since plastic deformation can be produced under concentrated load without fracture. Microindentation was extensively used also to introduce dislocations of known type say α or β which were subsequently characterized electrically by electron beam induced current (EBIC), deep level transient spectroscopy (DLTS), cathodoluminescence (CL) [2,3]. So far, the nature of these dislocations started to be questioned while pioneeering transmission electron microscopy (TEM) studies were published by Höche and Scheiber [4] and Lefebvre et al. [5]. They revealed complex dislocations arrangements (anisotropic microtwinning and perfect dislocations) which have been debated until nowadays. During the last 20 years, the development of the nanoindentation technique has allowed monitoring deformations in the milli-and micro newton regime (for a review refer to [6]). Subsequent, indentation fracture can be avoided even at room temperature [7]. However, the material flow under an indenter is complex as high stress concentrations are generated and this has considerably hardened the investigations. The works have concentrated firstly on bulk single crystals and progress in the understanding of the plastic flow is reported here. More recently, the nanoindentation technique was applied to the characterization of heterostructures and compliant substructures developed for optoelectronics [8,9]. In fact, the optical and electrical properties of heterostructures are deteriously affected by threading dislocations that are generated in lattice-mismatched structures. A better knowledge of the plastic behaviour of heterostructures is needed to improve their performance. On the other hand, new routes are investigated to avoid plastic relaxation in the operative part of the heterostructure. Compliant substructures have been developed in order to concentrate the plastic relaxation

show abstract