Indentation deformation of thin {111} GaAs and InSb foils: influence of polarity

Patriarche, G.; Largeau, L.; Rivière, J.P.; Bourhis, E. Le

doi:10.1080/09500830500157736

Cited by 3 publications

(1 citation statement)

References 21 publications

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“…Great research effort has been directed towards understanding the deformation mechanism of GaAs by use of nanoindentation [3][4][5]. Due to the dissymmetry in polarity of the GaAs zinc blend structure, Wasmer et al [6] revealed that differences in the elasticity and plasticity of GaAs in different orientation.…”

Section: Introductionmentioning

confidence: 99%

Molecular Dynamics Simulation of the Deformation of Single Crystal Gallium Arsenide

Chen

Huang

et al. 2014

AMM

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Three-dimensional molecular dynamics (3D MD) simulation was carried out to investigate the deformation of single crystal gallium arsenide (GaAs) during nanoindentation. Tersoff potential was used to simulate the atomistic interaction under an extremely low load of indentation. The coordination number and atomic displacement were studied and the cross-sectional profiles of the simulated indent were examined. The simulation results revealed that the lattice deformation of GaAs was influenced by polarity, showing distinct patterns on different crystalline planes. Slip band and dislocation were found to be the dominant deformation phenomena.

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Section: Introductionmentioning

confidence: 99%

Molecular Dynamics Simulation of the Deformation of Single Crystal Gallium Arsenide

Chen

Huang

et al. 2014

AMM

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Indentation behaviour of (011) thin films of III–V semiconductors: polarity effect differences between GaAs and InP

Largeau¹,

Patriarche²,

Bourhis

et al. 2006

International Journal of Materials Research

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(011) thin films of GaAs and InP (220 and 250 μm thick, respectively) were deformed by a Vickers indenter at elevated temperatures (350 – 400 °C) under loads in the range 0.4 – 2.9 N. For loads higher than 1.9 N, symmetric punching through InP was detected at the opposite face while it was asymmetric through GaAs. In InP, when the punching mechanism took place, pile-up around the indent site progressively disappeared. Moreover, the measured plastic volumes reveal that plastic flow throughout the specimens is volume conservative, implying that pile-up and punching events are related. In GaAs, the anisotropic pile-up plasticity was studied using transmission electron microscopy. Models describing the material flow through the samples and reverse flow of matter are proposed.

show abstract

Indentation behaviour of (011) thin films of III–V semiconductors: polarity effect differences between GaAs and InP

Largeau¹,

Patriarche²,

Bourhis

et al. 2006

International Journal of Materials Research

View full text Add to dashboard Cite

Abstract(011) thin films of GaAs and InP (220 and 250 mm thick, respectively) were deformed by a Vickers indenter at elevated temperatures (350–400°C) under loads in the range 0.4–2.9 N. For loads higher than 1.9N, symmetric punching through InP was detected at the opposite face while it was asymmetric through GaAs. In InP, when the punching mechanism took place, pile-up around the indent site progressively disappeared. Moreover, the measured plastic volumes reveal that plastic flow throughout the specimens is volume conservative, implying that pile-up and punching events are related. In GaAs, the anisotropic pile-up plasticity was studied using transmission electron microscopy. Models describing the material flow through the samples and reverse flow of matter are proposed.

show abstract

Indentation deformation of thin {111} GaAs and InSb foils: influence of polarity

Cited by 3 publications

References 21 publications

Molecular Dynamics Simulation of the Deformation of Single Crystal Gallium Arsenide

Molecular Dynamics Simulation of the Deformation of Single Crystal Gallium Arsenide

Indentation behaviour of (011) thin films of III–V semiconductors: polarity effect differences between GaAs and InP

Indentation behaviour of (011) thin films of III–V semiconductors: polarity effect differences between GaAs and InP

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