Increasing the Silicon Solar Cell Efficiency with Nanostructured SnO2 Anti-reflecting Coating Films

Habubi, Nadir F.; Ismail, Raid A.; Mishjil, Khudheir A.; Hassoon, Khaleel I.

doi:10.1007/s12633-017-9727-6

Cited by 23 publications

(9 citation statements)

References 17 publications

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“…The cells were cleaned with HF: DI water (5:1 v/v) in an ultrasonic bath for 10 min to remove the SiO 2 layer that covers the front face of the silicon cell and then cleaned with DI water in an ultrasonic bath for 10 min also. Tin oxide (SnO 2 ) thin film was deposited on silicon cells by the thermal evaporation method at the room temperature under vacuum of the order of 10 -5 mbar using high purity tin as the source material, here SnO 2 film employed as an antireflection layer [22]. Following, the annealing of deposited film was conducted at (400 °C) for (1 h).…”

Section: Fabrication Of Devicementioning

confidence: 99%

Synthesis and characterization of MAPbI3 thin film and its application in C-Si/perovskite tandem solar cell

Jassim

Bakr

Mustafa³

2020

J Mater Sci: Mater Electron

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Silicon, polymer and dye sensitized have been increasing rapidly in thin film of solar cells. Recently, perovskite is proposed as alternative material in the fabrication of solar cells. In this study, methyl ammonium lead triiodide (MAPbI 3 , CH 3 NH 3 PbI 3) perovskite thin film was prepared by two-step process of spin coating. The preparation process of thin film is summarized by reaction between the methyl ammonium iodide (CH 3 NH 3 I) and lead iodide (PbI 2). The absorbent layer of the prepared perovskite solar cell is based on the MAPbI 3 (CH 3 NH 3 PbI 3) thin film. The conversion efficiency of p-n silicon solar cells can be improved by preparing tandem solar cells. The X-ray diffraction result of the MAPbI 3 perovskite film manifested that it is polycrystalline with tetragonal system having a crystallite size of about 40 nm. The absorption spectrum of perovskite film was recorded by Ultra Violet-Visible spectrophotometer. The energy band gap of the MAPbI 3 film calculated by Tauc's formula was ~ 1.51 eV. The field emission scanning electron microscope image of the MAPbI 3 film surface elucidated a cubic-like crystal structure and other irregular structures also. The atomic force microscope image and the distribution chart of the grains of the film displayed that the grain size was ~ 58.7 nm. The results demonstrated that the conversion efficiency for silicon, perovskite and tandem (silicon/perovskite) solar cells are 3%, 4.83% and 7.42%, respectively.

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Section: Fabrication Of Devicementioning

confidence: 99%

Synthesis and characterization of MAPbI3 thin film and its application in C-Si/perovskite tandem solar cell

Jassim

Bakr

Mustafa³

2020

J Mater Sci: Mater Electron

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“…Thus, ARC with a less refractive index as the top surface on the photovoltaic device is an important optical parameter to reduce reflectance loss to enhance the efficiency of the device. Refractive index data as a function of wavelength was acquired from variable angle spectroscopic ellipsometry measurement and film thickness was theoretically confirmed using [15]…”

Section: Device Characterizationmentioning

confidence: 99%

Increasing the silicon solar cell efficiency with transition metal oxide nano-thin films as anti-reflection coatings

Sagar

Rao²

2020

Mater. Res. Express

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Herein, we report the study on RF-sputtered transition metal oxide thin films of Zinc oxide, Magnesium oxide, and Aluminum oxide as an antireflection coating on silicon-based solar cells and their influence on energy conversion. The transmission spectrum of all sputtered metal oxides was studied using a UV-visible spectrophotometer. The phase formation and microstructure analysis of these sputtered oxides were studied using glass for the destructive test along with the device. The x-ray diffraction and cross-section scanning electron microscopy of sputtered glass confirmed a singlephase structure along with nearly equal desired deposition thickness. The thicknesses of sputtered films were estimated using variable angle ellipsometry and the same was confirmed from cross-section scanning electron micrograph. The chemical composition and oxidation state of thin films deposited on glass were established from x-ray photoemission spectroscopy. The ability of a fabricated device deposited with the antireflection layer in converting photon energy to electrical energy was studied using a solar simulator under 1 sun condition. The ability to collect charge carriers of the antireflection coated device as a function of wavelength was also studied using quantum efficiency measurement.

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“…It can be clearly seen from Fig. 7 that the three layer coating of ZnAl 2 O 4 nanosheets exhibits superior transmittance of 93 %, since ZnAl 2 O 4 scatters photons of irradiated light in maximum amounts so as more photons can pass through the glass slide substrate [25][26][27][28][29]. It can be clearly seen from Fig.…”

Section: Resultsmentioning

confidence: 99%

Development of sol-gel derived gahnite anti-reflection coating for augmenting the power conversion efficiency of polycrystalline silicon solar cells

Kaliyannan¹,

Palanisamy²,

Manivasakan

et al. 2019

Materials Science-Poland

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The present research is focused on developing ZnAl2O4 (gahnite) spinel as an antireflection coating material for enhanced energy conversion of polycrystalline silicon solar cells (PSSC). ZnAl2O4 has been synthesized using dual precursors, namely aluminum nitrate nonahydrate and zinc nitrate hexahydrate in ethanol media. Diethanolamine has been used as a sol stabilizer in sol-gel process for ZnAl2O4 nanosheet fabrication. ZnAl2O4 nanosheet was deposited layer-by-layer (LBL) on PSSC by spin coating method. The effect of ZnAl2O4 coating on the physical, electrical, optical properties and temperature distribution in PSSC was investigated. The synthesized antireflection coating (ARC) material bears gahnite (ZnAl2O4) spinel crystal structure composed of two dimensional (2D) nanosheets. An increase in layer thickness proves the LBL deposition of ARC on the PSSC substrate. The ZnAl2O4 2D nanosheet comprising ARC on the PSSC was tested and it exhibited a maximum of 93 % transmittance, short-circuit photocurrent of 42.364 mA/cm2 and maximum power conversion efficiency (PCE) 23.42 % at a low cell temperature (50.2 °C) for three-layer ARC, while the reference cell exhibited 33.518 mA/cm2, 15.74 % and 59.1 °C, respectively. Based on the results, ZnAl2O4 2D nanosheets have been proven as an appropriate ARC material for increasing the PCE of PSSC.

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Increasing the Silicon Solar Cell Efficiency with Nanostructured SnO2 Anti-reflecting Coating Films

Cited by 23 publications

References 17 publications

Synthesis and characterization of MAPbI3 thin film and its application in C-Si/perovskite tandem solar cell

Synthesis and characterization of MAPbI3 thin film and its application in C-Si/perovskite tandem solar cell

Increasing the silicon solar cell efficiency with transition metal oxide nano-thin films as anti-reflection coatings

Development of sol-gel derived gahnite anti-reflection coating for augmenting the power conversion efficiency of polycrystalline silicon solar cells

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