Increasing recoverable energy storage in electroceramic capacitors using “dead-layer” engineering

McMillen, M.; Douglas, Alan; Correia, T. M.; Weaver, Paul M.; Cain, Markys G.; Gregg, J. M.

doi:10.1063/1.4772016

Cited by 72 publications

(40 citation statements)

References 18 publications

(19 reference statements)

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“…The stoichiometry (BiFeO 3 ) 0.4 –(SrTiO 3 ) 0.6 was targeted, however, EDX results [see in Ref. ] suggested that the resulting thin film was bismuth deficient and strontium rich than the nominal composition. Circular top electrodes of Platinum (500 μm diameter) were evaporated through a patterned mask.…”

Section: Experimental Methodsmentioning

confidence: 99%

A Lead‐Free and High‐Energy Density Ceramic for Energy Storage Applications

et al. 2013

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In this work, we demonstrate a very high‐energy density and high‐temperature stability capacitor based on SrTiO3‐substituted BiFeO3 thin films. An energy density of 18.6 J/cm3 at 972 kV/cm is reported. The temperature coefficient of capacitance (TCC) was below 11% from room temperature up to 200°C. These results are of practical importance, because it puts forward a promising novel and environmentally friendly, lead‐free material, for high‐temperature applications in power electronics up to 200°C. Applications include capacitors for low carbon vehicles, renewable energy technologies, integrated circuits, and for the high‐temperature aerospace sector.

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Section: Experimental Methodsmentioning

confidence: 99%

A Lead‐Free and High‐Energy Density Ceramic for Energy Storage Applications

et al. 2013

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“…[ 13 ] The utilization of a "dead layer" at the fi lm/electrode interface could wileyonlinelibrary.com be another way to further increase the energy density, especially for a large area device. [ 31 ] To benchmark the capability of the BNLBTZ thin fi lms for applications in energy storage devices, the energy densities of the BNLBTZ thin fi lms in the present work are compared with a number of promising materials previously reported ( Figure 6 and Supporting Information, Table S1). The energy densities in both the (100)-and (111)-oriented BNLBTZ thin fi lms reported here are signifi cantly better than previously reported leadbased (PZ, PLZT, PZN-PMN-PT, PLZST, etc.)…”

Section: Energy Storagementioning

confidence: 99%

Giant Electric Energy Density in Epitaxial Lead‐Free Thin Films with Coexistence of Ferroelectrics and Antiferroelectrics

Peng

Zhang

et al. 2015

Adv Elect Materials

211

127

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lowest energy density. [4][5][6] To improve this, much attention has been particularly paid to antiferroelectric ceramics such as PZ, [ 7,8 ] PLZT, [ 9,10 ] PZN-PMN-PT, [ 4 ] PLZST, [ 4 ] etc., since they normally have higher energy density than ferroelectric and paraelectric ceramics at comparable electric fi eld. [ 2 ] The energy density in bulk ceramics is usually less than 1 J cm −3 because of the limitation of low dielectric breakdown strength (<100 kV cm −1 ). [ 11,12 ] With the development of high-quality thin fi lms by sol-gel, pulsed laser deposition (PLD), molecular beam epitaxy, etc., large energy density, mainly in lead-based antiferroelectric thin fi lms, has been achieved due to the higher dielectric breakdown strength (>500 kV cm −1 ). [ 3,9,13,14 ] For example, a high energy density of 53 J cm −3 at 3500 kV cm −1 was obtained in relaxor antiferroelectric (Pb 0.92 La 0.08 )(Zr 0.9 Ti 0.05 ) O 3 sol-gel thin fi lm. [ 9 ] However, widespread applications of lead-based materials are prohibited due to the toxicity of lead. As a lead-free dielectric material, poly(vinylidene fl uoride) (PVDF)-based polymer was also widely studied and a high energy density of 27 J cm −3 at 8000 kV cm −1 was reported. [ 1,4 ] However, its lifetime and reliability are seriously impaired at the maximum operating temperature (typically less than 85 °C), seriously limiting its applications as capacitors.Ferroelectrics/antiferroelectrics with high dielectric breakdown strength have the potential to store a great amount of electrical energy, attractive for many modern applications in electronic devices and systems. Here, it is demonstrated that a giant electric energy density (154 J cm −3 , three times the highest value of lead-based systems and fi ve times the value of the best dielectric/ ferroelectric polymer), together with the excellent fatigue-free property, good thermal stability, and high effi ciency, is realized in pulsed laser deposited (Bi 1/2 Na 1/2 ) 0.9118 La 0.02 Ba 0.0582 (Ti 0.97 Zr 0.03 )O 3 (BNLBTZ) epitaxial lead-free relaxor thin fi lms with the coexistence of ferroelectric (FE) and antiferroelectric (AFE) phases. This is endowed by high epitaxial quality, great relaxor dispersion, and the coexistence of the FE/AFE phases near the morphotropic phase boundary. The giant energy storage effect of the BNLBTZ lead-free relaxor thin fi lms may make a great impact on the modern energy storage technology.

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“…Antiferroelectric (AFE) materials are promising candidates of great current interest for future high-energy and fast-speed storage capacitors, due to the field-forced phase transition into the ferroelectric state accompanied by large charge storage [1][2][3][4][5]. Thin films of AFE and ferroelectric (FE) materials are of particular interest due to their relevant applications in connection with microelectronic devices [4,6].…”

Section: Introductionmentioning

confidence: 99%