Increasing bondability and bonding strength of gold stud bumps onto copper pads with a deposited titanium barrier layer

Chuang, Cheng-Li

doi:10.1016/j.mee.2006.11.005

Cited by 23 publications

(7 citation statements)

References 5 publications

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“…These results are consistent with those obtained in Ref. 8. Therefore, integration of the silver bonding layer and titanium barrier layer guaranteed the bondability and bonding quality for gold stud bumps thermosonically flip-chip bonded to copper electrodes on the alumina substrate.…”

Section: Bondability Of Gold Stud Bump Flip-chip Bondingsupporting

confidence: 92%

“…The stacking structure of the copper pads and process parameters for gold stud bumping onto copper pads have been described in a previous work. 8 Following gold stud bumping, the bumped silicon wafer was cut into pieces 1.19 mm 9 0.97 mm; each has eight gold stud bumps (Fig. 2).…”

Section: Methodsmentioning

confidence: 99%

“…This scheme also has great potential for application to thermosonic bonding of gold stud bumps onto copper pads to enhance bondability and bonding strength. 8 The gold stud bump flip-chip bonding process has been widely employed in fabricating chips on board (COB) using an anisotropic conductive film (ACF) or isotropic conductive film (ICF). 9 The ACF is an insulating polymer with dispersed conductive particles.…”

Section: Introductionmentioning

confidence: 99%

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Gold Stud Bumps Flip-Chip Bonded onto Copper Electrodes with Titanium and Silver Layers

Chuang

Aoh

Liao

et al. 2008

Journal of Elec Materi

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Section: Bondability Of Gold Stud Bump Flip-chip Bondingsupporting

confidence: 92%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Gold Stud Bumps Flip-Chip Bonded onto Copper Electrodes with Titanium and Silver Layers

Chuang

Aoh

Liao

et al. 2008

Journal of Elec Materi

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“…The gold stud flip-chip bonding process subsequently developed for MEMS is often used as a low-volume, die level packaging approach (Lau 1995;Aschenbrenner, Miessner, and Reichl 1997;Chuang 2007). It connects the MEMS die to a circuit board, electronics chip, or interposer and makes electrical contact to gold bumps using adhesives, thermosonic assembly, or thermocompression bonding.…”

Section: Through-wafer Interconnects 239mentioning

confidence: 99%

Development of Through-Wafer Interconnects for MEMS Deformable Mirrors

Diouf

Stewart

Cornelissen

et al. 2010

International Journal of Optomechatronics

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A MEMS deformable mirror (DM) packaging process development effort is described. This development provides a path towards direct integration of future large actuator count optical MEMS arrays (>4000) with underlying driver electronics. Characteristic features of the packaging process include creating electrical interconnection paths through the silicon wafer for each actuator, depositing gold bump bonds on the backside of the wafer, and fusing that array of bump bonds to an interposer substrate. This process differs from existing processes for MEMS arrays, which generally employ lithographically patterned wire-routing and peripheral wire bonding from the front surface of the MEMS array. In this article a feasibility experiment is described and successful results and process parameters are presented.

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“…However, this process might damage the chips. The most popular used method is the metallization deposition on the top surface, such as gold, platinum, silver and palladium, [10][11][12] on the copper pad to improve the bondability. J.N.…”

Section: Introductionmentioning

confidence: 99%

Characterization of ag nanofilm metallization on copper chip interconnect and its ultrasonic bondability

Tian

Zhao

Wang

2009

2009 International Conference on Electronic Packaging Technology &Amp; High Density Packaging

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To improve the bondability of copper chip interconnect, a Si/Ti-Cu-Ag structure was designed and fabricated using evaporation method. Some analytical methods such as SEM, AFM, XRD and XPS were used to characterize the Ag nanofilm metallization and its bondability. It was found that the evaporated Ag metallization has good surface state and samll particle size, which could diffuses readily in the wire bonding process and thus improve the bondablilty. XPS showed the Ag metallization was pure silver without oxidation and sulfuration when stored at the room temperature. And XRD showed the crystal face index of the top surface polycrystalline Ag layer was (111), which agree with the principle of minimum surface energy. The bondability and shear strength of the Au ball bump on the Si/Ti-Cu-Ag structure were excellent at room temperature and 150°C, better than the oxygen free copper, and meet the JEDEC Standard 22-B116. After high temperature storage at 200°C for 16 days and temperature cycling for 1000 cycles, the interfaces of the Si/Ti-Cu-Ag structure were still very tight and clear, showing high reliability.

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Increasing bondability and bonding strength of gold stud bumps onto copper pads with a deposited titanium barrier layer

Cited by 23 publications

References 5 publications

Gold Stud Bumps Flip-Chip Bonded onto Copper Electrodes with Titanium and Silver Layers

Gold Stud Bumps Flip-Chip Bonded onto Copper Electrodes with Titanium and Silver Layers

Development of Through-Wafer Interconnects for MEMS Deformable Mirrors

Characterization of ag nanofilm metallization on copper chip interconnect and its ultrasonic bondability

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