Increased-area oxidised single-fundamental mode VCSEL with self-aligned shallow etched surface relief

Unold, H.J.; Grabherr, M.; Eberhard, Franz; Mederer, F.; Jäger, R.; Riedl, Michael C.; Ebeling, Karl Joachim

doi:10.1049/el:19990952

Cited by 38 publications

(14 citation statements)

References 4 publications

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“…As opposed to previous samples, where surface etching only introduced a certain limited single-mode operation range to devices of up to 7 µm diameter [8], the improved layer structure and processing have much augmented the effect. The comparison of unetched devices and etch spots of 3 and 5 µm diameter on 11 µm oxide aperture VCSELs in Fig.…”

Section: Output Characteristicsmentioning

confidence: 79%

“…As described previously, our self-aligned surface etching process allows to align the surface relief automatically to the oxide aperture respective mesa with high precision by only one additional photoresist step [8]. Fig.…”

Section: Device Structure and Processingmentioning

confidence: 99%

“…More specifically, since the number of transverse modes oscillating depends on pumping profile and thermal conditions, these values are subject to strong variations with current, thus rendering optical properties of the VCSEL unreliable. Previous attempts in increasing single-mode output power include external reflectors and other optical elements, increasing the cavity length [1,2], hybrid implant/oxide VCSELs [3], metal apertures [4], and surface etching [5,6,7,8]. We present the application of an optimized self-aligned shallow surface etch to force oxidized VCSELs of up to 16 µm aperture diameter to operate on the fundamental mode from threshold to thermal roll-over.…”

Section: Introductionmentioning

confidence: 99%

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Large-area single-mode VCSELs and the self-aligned surface relief

Unold

Mahmoud

Jäger

et al. 2001

IEEE J. Select. Topics Quantum Electron.

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101

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The effect of mode-profile specific etching of the top layer in selectively oxidized VCSEL structures at 850 nm emission wavelength is examined. For high reproducibility, a selfaligned etching technique is used which aligns surface etch and oxide aperture by only one additional photoresist step. By optimizing layer structure and etch spot size, completely single-mode devices with aperture diameters up to 16 µm are obtained. Maximum singlefundamental mode output power of 3.4 mW at room temperature and over 4 mW at 0• C is obtained with a maximum far-field angle of 5.5• . Using parameters for etch spot height and diameter, Gaussian beam spot size and phase curvature, the measured diffracted farfield distribution is fitted well over a 20 dB intensity range. The chosen fit parameters therefore enable to estimate the amount of phase curvature within the VCSEL for different operation currents, which cannot be obtained with available measurement methods.

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Section: Output Characteristicsmentioning

confidence: 79%

Section: Device Structure and Processingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Large-area single-mode VCSELs and the self-aligned surface relief

Unold

Mahmoud

Jäger

et al. 2001

IEEE J. Select. Topics Quantum Electron.

Self Cite

101

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“…An early demonstration showed the remarkable effect of the surface relief on the modal and beam characteristics of an oxide-confined VCSEL [55]. With further optimizations of oxide and surface relief diameters, and using a fabrication technique for self-alignment of the surface relief to the oxide aperture [56], a single-mode power of 3.4 mW was achieved at 850 nm [57].…”

Section: Single-mode Emission From Inherently Multimode Vcselsmentioning

confidence: 99%

Single-Mode VCSELs

Larsson

Gustavsson

2012

Springer Series in Optical Sciences

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The only active transverse mode in a truly single-mode VCSEL is the fundamental mode with a near Gaussian field distribution. A single-mode VCSEL produces a light beam of higher spectral purity, higher degree of coherence and lower divergence than a multimode VCSEL and the beam can be more precisely shaped and focused to a smaller spot. Such beam properties are required in many applications. In this chapter, after discussing applications of single-mode VCSELs, we introduce the basics of fields and modes in VCSELs and review designs implemented for singlemode emission from VCSELs in different materials and at different wavelengths. This includes VCSELs that are inherently single-mode as well as inherently multimode VCSELs where higher-order modes are suppressed by mode selective gain or loss. In each case we present the current state-of-the-art and discuss pros and cons. At the end, a specific example with experimental results is provided and, as a summary, the most promising designs based on current technologies are identified. IntroductionThe vertical-cavity surface-emitting laser (VCSEL) is an attractive light source for an expanding range of applications. Due to low cost manufacturing, low power consumption, simplified packaging, attractive beam properties (circular and low divergence beam) and excellent high-speed modulation characteristics at low currents, it has replaced the edge-emitting laser in short-reach optical communication links

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“…Several approaches were perused to develop single-mode VCSELs with increased aperture diameter such as antiresonant reflecting [4], the combined application of implant and oxide apertures [5], use of Bragg reflectors partially disordered by Zn-diffusion [6], extending the optical cavity [7], effective index guiding based on the photonic crystal structure [8], increasing the high-order mode loss by the shallow surface-relief etching [9] and the two-dimensional triangular holey structure [10]. However, these techniques involve complex extra processing or a hybrid configuration highly sensitive to misalignment and mechanical disturbances, which, in the end, hampers a low-cost and highyield manufacturing.…”

Section: Introductionmentioning

confidence: 99%