2018
DOI: 10.1016/j.apcatb.2018.05.060
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Incorporation of CoO nanoparticles in 3D marigold flower-like hierarchical architecture MnCo2O4 for highly boosting solar light photo-oxidation and reduction ability

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Cited by 363 publications
(91 citation statements)
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“…The obtained band gap of the Co 2 MnO 4 (0.35 eV) is in good agreement with other theoretical results ranging from 0 eV to 0.5 eV, which were calculated with different theoretical levels [13,57,59]. However, the energy gap of the Co 2 MnO 4 seems too small comparing with the experimental observations, which ranges from 1.69 eV to 2.93 eV from different researchers [60][61][62]. We mention here that all these experimental results were obtained from fitting the UV-Vis absorption spectra [60][61][62], from which the energy gap represents only the optical transition between the conduction band and the valence band.…”
Section: Accepted Manuscriptsupporting
confidence: 88%
See 1 more Smart Citation
“…The obtained band gap of the Co 2 MnO 4 (0.35 eV) is in good agreement with other theoretical results ranging from 0 eV to 0.5 eV, which were calculated with different theoretical levels [13,57,59]. However, the energy gap of the Co 2 MnO 4 seems too small comparing with the experimental observations, which ranges from 1.69 eV to 2.93 eV from different researchers [60][61][62]. We mention here that all these experimental results were obtained from fitting the UV-Vis absorption spectra [60][61][62], from which the energy gap represents only the optical transition between the conduction band and the valence band.…”
Section: Accepted Manuscriptsupporting
confidence: 88%
“…However, the energy gap of the Co 2 MnO 4 seems too small comparing with the experimental observations, which ranges from 1.69 eV to 2.93 eV from different researchers [60][61][62]. We mention here that all these experimental results were obtained from fitting the UV-Vis absorption spectra [60][61][62], from which the energy gap represents only the optical transition between the conduction band and the valence band. However, there are many impurity states…”
Section: Accepted Manuscriptmentioning
confidence: 84%
“…When they are coupled to each other to form a n-p heterojunction (Bi 2 WO 6 /Bi 2 S 3 /MoS 2 ), the Mott–Schottky curve shows an inverted ‘V-shape’ characteristic ( Figure S5d ). Generally, E VB for p-type semiconductors is very close to the flat-band potential, whereas E CB for n-type semiconductors is very close to the flat-band potential [ 57 ]. The flat-band potential in the n-type semiconductor is 0.1–0.3 eV higher than E CB , whereas that in the p-type semiconductor is 0.1–0.3 eV lower than E VB [ 58 ].…”
Section: Resultsmentioning
confidence: 99%
“…As shown in Fig. 8c and d, E CB values of n-type ZnAlLa-500CLDH and CM-CLDH10 were -0.71 V and -1.27 V (V vs NHE), after transformation from E (SCE) to E (NHE) 56 . As is known to all, Eg = E VB -E CB , calculated value of valence band potential (E VB ) were 2.66 V and 1.9 V.…”
Section: Energy Band Structurementioning
confidence: 82%