InAsP phase formations during the growth of a GalnAsP/lnP distributed feedback laser diode structure on corrugated lnP using metalorganic vapor phase epitaxy

Abstract

An InAsP phase formed during the heatup time to the growth temperature of MOVPE was investigated by transmission electron microscopy and energy dispersive spectroscopy. The thickness of the InAsP phase on the concave regions of corrugation is increased with increased AsH3 partial pressure and heat-up time. The arsenic composition in InAsP was also increased with the increase of AsH3 partial pressure during the heat-up time. Dislocations and defects were not generated below an AsH3 partial pressure of 2.4×10−3 Torr, although strain was induced according to the thickness and composition of InAsP formed on the concave regions of corrugation.

Scatterometry measurement of ingaasp/inp grating for DFB lasers grown with MOVPE

“…In the process of growing heterostructure wafers for DFB-LDs, the resulting corrugation height is decreased as compared to the initial one. This is due to the mass-transport phenomena on an InP grating, and because the arsenic partial pressure into the metal-organic vapor-phase epitaxy (MOVPE) growth ambient is optimized to control this deformation [13][14][15][16][17]. The measurement of the grating profile is very important for actual device production.…”