InAs nanostructures grown by droplet epitaxy directly on InP(001) substrates

Fuster, David; Abderrafi, Kamal; Alén, Benito; González, Y.; Wewior, Lukasz Jakub; González, L.

doi:10.1016/j.jcrysgro.2015.11.003

Cited by 17 publications

(11 citation statements)

References 38 publications

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“…Figure 1 shows AFM images of the samples T1, T2, T3, and T4 with GaAs islands, grown at 300, 350, 400, and 450 • C, respectively. As expected, with increasing the deposition temperature the island density decreases [18][19][20][21] . This tendency satisfies the classical nucleation theory of J.…”

Section: Methodssupporting

confidence: 80%

“…As shown in Refs. [18][19][20] , the density of DE QDs, when crystallized at the same temperature used for the deposition of the metal droplets, mirrors that of droplets, thus making possible to access the density dependence of Ga droplets on the deposition parameters through the measurement of the island density. The crystallized surface morphology is more stable on time and avoids the strong oxidation effects which would hinder the reproducibility of the atomic force microscope (AFM) measurements.…”

Section: Methodsmentioning

confidence: 99%

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Nucleation of Ga Droplets Self-Assembly on GaAs(111)A Substrates

Tuktamyshev

Fedorov

Bietti

et al. 2021

Preprint

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We investigated the nucleation of Ga droplets on exact GaAs(111)A substrates in the view of their use as the seeds for the self-assembly droplet epitaxial quantum dots. A small critical cluster size of 1-2 atoms characterizes the droplet nucleation. Low values of the Hopkins-Skellam index (as low as 0.35) demonstrate a high degree of a spatial order of the droplet ensemble. Around 350 °C the droplet size distribution becomes bimodal. We attribute this observation to the interplay between the local environment and the limitation to the adatom surface diffusion introduced by the Ehrlich-Schwöbel barrier at the terrace edges.

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Section: Methodssupporting

confidence: 80%

Section: Methodsmentioning

confidence: 99%

Nucleation of Ga Droplets Self-Assembly on GaAs(111)A Substrates

Tuktamyshev

Fedorov

Bietti

et al. 2021

Preprint

View full text Add to dashboard Cite

show abstract

“…From the nucleation theory of Venables [ 22 , 23 ], the density of stable clusters exponentially depends on the temperature: with decreasing the deposition temperature the density of stable clusters is increasing. The density dependence of Ga droplets and GaAs QDs self-assembled on GaAs(001) [ 24 ], on singular GaAs(111)A [ 25 , 26 ], and on vicinal GaAs(111)A [ 21 ], as well as In droplets and InAs QDs on GaAs(001) [ 27 ] and on InP(001) [ 28 ] satisfy the behavior described by the nucleation theory.…”

Section: Resultsmentioning

confidence: 98%

Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A

et al. 2020

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We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increase in the density with decreasing temperature, indeed, is observed only down to 160 ∘C, where the indium islands undertake the expected liquid-to-solid phase transition. Further decreasing the temperature causes a sizable reduction of the island density. An additional reentrant increasing behavior is observed below 80 ∘C. We attribute the above complex behavior to the liquid–solid phase transition and to the complex island–island interaction which takes place between crystalline islands in the presence of strain. Indium solid islands grown at temperatures below 160 ∘C have a face-centered cubic crystal structure.

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“…Within this class of QDs, droplet epitaxy (DE) [ 10 , 13 , 14 ] and droplet etching [ 9 , 15 , 16 ] (alternative growth protocols to Stranski–Krastanov for strain-free III–V-based semiconductor nanostructures), enabled the fabrication of state-of-the-art devices such as lasers [ 17 , 18 , 19 , 20 , 21 ] and quantum emitters, including single-photon sources [ 22 , 23 , 24 , 25 , 26 ] and entangled photons [ 9 , 27 , 28 , 29 , 30 ] with electrical injection [ 31 ]. The versatility of this method allowed to grow many different semiconductor alloys (GaInSb [ 32 ], AlGaAs [ 33 , 34 , 35 , 36 , 37 ], InGaAs [ 38 , 39 , 40 , 41 , 42 , 43 , 44 ], and InGaP [ 26 , 45 , 46 ]), forming a plethora of nanostructures [ 47 ] such as quantum dots (QDs); QDs diads [ 48 , 49 , 50 ]; multiple-concentric quantum rings [ 18 , 23 , 51 , 52 ...…”

Section: Introductionmentioning

confidence: 99%

Exciton Dynamics in Droplet Epitaxial Quantum Dots Grown on (311)A-Oriented Substrates

et al. 2020

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Droplet epitaxy allows the efficient fabrication of a plethora of 3D, III–V-based nanostructures on different crystalline orientations. Quantum dots grown on a (311)A-oriented surface are obtained with record surface density, with or without a wetting layer. These are appealing features for quantum dot lasing, thanks to the large density of quantum emitters and a truly 3D lateral confinement. However, the intimate photophysics of this class of nanostructures has not yet been investigated. Here, we address the main optical and electronic properties of s-shell excitons in individual quantum dots grown on (311)A substrates with photoluminescence spectroscopy experiments. We show the presence of neutral exciton and biexciton as well as positive and negative charged excitons. We investigate the origins of spectral broadening, identifying them in spectral diffusion at low temperature and phonon interaction at higher temperature, the presence of fine interactions between electron and hole spin, and a relevant heavy-hole/light-hole mixing. We interpret the level filling with a simple Poissonian model reproducing the power excitation dependence of the s-shell excitons. These results are relevant for the further improvement of this class of quantum emitters and their exploitation as single-photon sources for low-density samples as well as for efficient lasers for high-density samples.

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InAs nanostructures grown by droplet epitaxy directly on InP(001) substrates

Cited by 17 publications

References 38 publications

Nucleation of Ga Droplets Self-Assembly on GaAs(111)A Substrates

Nucleation of Ga Droplets Self-Assembly on GaAs(111)A Substrates

Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A

Exciton Dynamics in Droplet Epitaxial Quantum Dots Grown on (311)A-Oriented Substrates

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