InAs/GaSb strained layer superlattice detectors with nBn design

Plis, E.; Myers, Stephen; Khoshakhlagh, Arezou; Kim, Ha Sul; Sharma, Yashika; Gautam, Nutan; Dawson, Ralph; Krishna, S.

doi:10.1016/j.infrared.2009.09.008

Cited by 8 publications

(2 citation statements)

References 17 publications

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“…5.1. Indirect transitions in real space between holes in the barrier (InGaSbN) and electrons in the well (InAs) layers were the main mechanism for the absorption of light [17]. In Optel, instead of using the superlattice wavevector in the z direction, q z (also known as k z or the momentum of an electron/hole in the growth direction), a normalized wavevector was defined as Q z = q z t p /.…”

Section: Discussionmentioning

confidence: 99%

Theoretical study of the effects of strain balancing on the bandgap of dilute nitride InGaSbN/InAs superlattices on GaSb substrates

Hazbun

Bhargava

Rodriguez-Toro

et al. 2015

Infrared Physics & Technology

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Section: Discussionmentioning

confidence: 99%

Theoretical study of the effects of strain balancing on the bandgap of dilute nitride InGaSbN/InAs superlattices on GaSb substrates

Hazbun

Bhargava

Rodriguez-Toro

et al. 2015

Infrared Physics & Technology

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“…Sample A has a typical dark current characteristics of minority carrier unipolar devices with a fast increase current in the entire bias range. 6,7,11 In contrast, sample B appears to have the back-to-back diode behavior with the I-V on the negative bias side corresponding to the reverse bias behavior of the "active-region-diode" and the I-V on the positive bias side corresponding to the reverse bias behavior of the lower doped "p-contact-diode. "…”

mentioning

confidence: 97%

Effect of contact doping in superlattice-based minority carrier unipolar detectors

Nguyen¹,

Chen²,

Hoang³

et al. 2011

Applied Physics Letters

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We report the influence of the contact doping profile on the performance of superlattice-based minority carrier unipolar devices for mid-wave infrared detection. Unlike in a photodiode, the space charge in the p-contact of a pMp unipolar device is formed with accumulated mobile carriers, resulting in higher dark current in the device with highly doped p-contact. By reducing the doping concentration in the contact layer, the dark current is decreased by one order of magnitude. At 150 K, 4.9 μm cut-off devices exhibit a dark current of 2 × 10−5A/cm2 and a quantum efficiency of 44%. The resulting specific detectivity is 6.2 × 1011 cm Hz1/2/W at 150 K and exceeds 1.9 × 1014 cm Hz1/2/W at 77 K.

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Mid-wavelength InAs/GaSb type-II superlattice barrier detector with nBn design and M barrier

Liu,

Zhu,

et al. 2023

Optoelectron. Lett.

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InAs/GaSb strained layer superlattice detectors with nBn design

Cited by 8 publications

References 17 publications

Theoretical study of the effects of strain balancing on the bandgap of dilute nitride InGaSbN/InAs superlattices on GaSb substrates

Theoretical study of the effects of strain balancing on the bandgap of dilute nitride InGaSbN/InAs superlattices on GaSb substrates

Effect of contact doping in superlattice-based minority carrier unipolar detectors

Mid-wavelength InAs/GaSb type-II superlattice barrier detector with nBn design and M barrier

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