Effect of contact doping in superlattice-based minority carrier unipolar detectors

Nguyen, Binh‐Minh; Chen, G.; Hoang, A. M.; Pour, Siamak Abdollahi; Bogdanov, Simeon; Razeghi, Manijeh

doi:10.1063/1.3613927

Cited by 35 publications

(23 citation statements)

References 11 publications

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“…For this purpose, a laser source can be used [8][9] providing the responsivity at a given wavelength. Here we preferred to use blackbodies (BBs) [2,[10][11], which are more representative of the operational conditions, in terms of spectral bandwidth as well as in terms of incident power.…”

Section: Current Under Illumination Measurementmentioning

confidence: 99%

Comparison of the electro-optical performances of MWIR InAs/GaSb superlattice pin photodiode and FPA with asymmetrical designs

et al. 2014

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We first present an electro-optical characterization of the radiometric performances of a type-II InAs/GaSb superlattice (T2SL) pin photodiode operating in the mid-wavelength infrared domain. This photodiode was grown with an InAs-rich structure. We focused our attention on quantum efficiency and responsivity: quantum efficiency of mono-pixel device reaches 23% at λ = 2.1 µm for 1 µm thick SL structure and 77K operating temperature. Then we measured the angular response of this photodiode: the response of the photodiode doesn't depend on the angle of incidence of the flux. We also report the QE of 2µm-thick InAs-rich T2SL pin 320x256 pixels focal plane array, which reaches 61% at λ = 2.6 µm.

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Section: Current Under Illumination Measurementmentioning

confidence: 99%

Comparison of the electro-optical performances of MWIR InAs/GaSb superlattice pin photodiode and FPA with asymmetrical designs

et al. 2014

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“…By using the M-structure SL as a barrier region, the band alignments can be experimentally controlled, allowing for efficient extraction of photocurrent under applied biases of less than 50 meV [22]. It has been demonstrated that the dark current in a pMp detector can be decreased by an order of magnitude by reducing the doping concentration in the contact layer [96].…”

Section: M-structurementioning

confidence: 99%

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Sood¹,

Zeller²,

Welser³

et al. 2018

Two-Dimensional Materials for Photodetector

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The implementation of strained layer superlattices (SLS) for detection of infrared (IR) radiation has enabled compact, high performance IR detectors and two-dimensional focal plane arrays (FPAs). Since initially proposed three decades ago, SLS detectors exploiting type II band structures existing in the InAs/GaSb material system have become integral components in high resolution thermal detection and imaging systems. The extensive technological progress occurring in this area is attributed in part to the band structure flexibility offered by the nearly lattice-matched InAs/AlSb/Ga(In)Sb material system, enabling the operating IR wavelength range to be tailored through adjustment of the constituent strained layer compositions and/or thicknesses. This has led to the development of many advanced type II SLS device concepts and architectures for low-noise detectors and FPAs operating from the short-wavelength infrared (SWIR) to very long-wavelength infrared (VLWIR) bands. These include double heterostructures and unipolar-barrier structures such as graded-gap M-, W-, and N-structures, nBn, pMp, and pBn detectors, and complementary barrier infrared detector (CBIRD) and pBiBn designs. These diverse type II SLS detector architectures have provided researchers with expanded capabilities to optimize detector and FPA performance to further benefit a broad range of electrooptical/IR applications.

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“…Most of these progresses were obtained by the use of particular device designs using nBn 9 , C-BIRD 12 or pMp 13,14 structures, not by the choice of the InAs/GaSb SL period while, paradoxically, the SL period composition governs the material properties of the active zone material. In order to exhibit MWIR operation, most of the SL periods reported are symmetric (InAs to GaSb thickness ratio close to one) with thicknesses in the range of 8 to 11 monolayers (MLs) [2][3][4][5][6][7][8][9][10][11][12]15 .…”

Section: Introductionmentioning

confidence: 98%

InAs/GaSb superlattice pin photodiode: choice of the SL period to enhance the temperature operation in the MWIR domain

Christol

Taalat

Delmas

et al. 2013

Quantum Sensing and Nanophotonic Devices X

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In this communication, we studied the influence of the SL period on the electrical performances of MWIR pin photodiodes, fabricated by MBE on p-type GaSb substrate. These SL structures are made of symmetric or asymmetric SL period designs and exhibited cut-off wavelength around 5µm at 77K. Experimental measurements carried out on several SL pin photodiodes show the superiority, in terms of dark current density, of the asymmetric SL structure composed of 7 InAs monolayers (MLs) and 4 GaSb MLs. As a result, the 7/4 SL diode exhibits dark current density values as low as 40nA/cm 2 and R 0 A product greater than 1.7x10 6 Ohm.cm 2 at 77K, one decade larger than the value obtained with equivalent symmetric 10/10 SL diode. This result obtained demonstrates the strong influence of the SL period design on the performances, and then on temperature operation, of MWIR SL photodiodes.

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Effect of contact doping in superlattice-based minority carrier unipolar detectors

Cited by 35 publications

References 11 publications

Comparison of the electro-optical performances of MWIR InAs/GaSb superlattice pin photodiode and FPA with asymmetrical designs

Comparison of the electro-optical performances of MWIR InAs/GaSb superlattice pin photodiode and FPA with asymmetrical designs

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

InAs/GaSb superlattice pin photodiode: choice of the SL period to enhance the temperature operation in the MWIR domain

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