InAs/GaAs short-period strained-layer superlattices grown on GaAs as spatial light modulators: uniformity measurements

Huang, Man-Fang; Garmire, E.; Hasenberg, T. C.; Koehler, S.D.

doi:10.1006/spmi.1996.0164

Cited by 5 publications

(1 citation statement)

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“…2 However, for mid-to long-wavelength infrared applications, InAs/GaAs and InSb/InAs x Sb 1Ϫx SLS have demonstrated light emission/detection capability. [3][4][5] More recently the study of narrow band gap materials has been extended to InAs/InSb short-period strained superlattices. 6,7 Theoretical study of this SLS system has to date been limited and has been done only on the ͑111͒ alternate monolayer (InAs͒ 1 ͑InSb) 1 system.…”

Section: Introductionmentioning

confidence: 99%

Tight-binding calculations of energy gaps in (001)-(InAs)n(InSb)m strained superlattices

Lin‐Chung

Yang

2000

Journal of Applied Physics

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Tight-binding calculations of electronic structures for (001)-(InAs)n(InSb)m strained layer superlattices are presented. The dependences of the superlattice band gap on the band offsets between InAs and InSb are examined for three different types of biaxial strains. It is found that the band gap depends strongly on the band offset, and that for m=1 the ordering lowers the band gap with respect to the random alloy. A comparison with the photoluminescence data for the energy gaps of (n×1) strained-layer superlattices is discussed. In addition, the electronic structures of strained InAs quantum wells are calculated, and interpretations are provided for the observed type-I to type-II band alignment transition at n=5 in a quantum well formed by (n×1) strained layer superlattices and AlSb barriers. Changes of energy gaps with layer thicknesses in strained layer superlattices with n=m and n=8−m are also studied.

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Section: Introductionmentioning

confidence: 99%