In0.49Ga0.51P/GaAs heterostructures grown by low-pressure metalorganic chemical vapor deposition

Abstract

Articles you may be interested inStudy of Schottky contacts on nGa0.51In0.49P by lowpressure metalorganic chemicalvapor deposition Conduction and valenceband offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition

As–P interface-sensitive GaInP/GaAs structures grown in a production MBE system

“…Mobilities are about 4000 cm 2 V À1 s À1 at 300 K and up to 40,000 cm 2 V À1 s À1 at 77 K for the reference commutation procedure, which is the highest mobility reported for the GaInP/GaAs heterojunction [8]. The same structure has been grown with Al 0.12 Ga 0.88 As instead of GaInP, corresponding to a similar conduction band offset.…”