“…Mobilities are about 4000 cm 2 V À1 s À1 at 300 K and up to 40,000 cm 2 V À1 s À1 at 77 K for the reference commutation procedure, which is the highest mobility reported for the GaInP/GaAs heterojunction [8]. The same structure has been grown with Al 0.12 Ga 0.88 As instead of GaInP, corresponding to a similar conduction band offset.…”