As–P interface-sensitive GaInP/GaAs structures grown in a production MBE system

Dhellemmes, S.; Godey, S.; Wilk, A.; Wallart, X.

doi:10.1016/j.jcrysgro.2004.12.101

Cited by 6 publications

(4 citation statements)

References 11 publications

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“…The reasons are related to the possibility of cation segregation and interdiffusion between the two adjacent layers and with As/P anion exchange during the formation of the layers. Several GaAs/GalnP and GalnP/GaAs interface chemistry studies can be found in literature [4][5][6][7][8]. Most of them report the formation of GalnAs, GaAsP, or quaternary phases like GalnAsP, whose exact compositions and thicknesses would be strongly dependent on growth conditions.…”

Section: Introductionmentioning

confidence: 99%

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

López-Escalante

Gabás

García

et al. 2016

Applied Surface Science

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GaAs/GalnP and GaAs/AlInP interfaces have been studied using photoelectron spectroscopy tools. The combination of depth profile through Ar + sputtering and angle resolved X-ray photoelectron spectroscopy provides reliable information on the evolution of the interface chemistry. Measurement artifacts related to each particular technique can be ruled out on the basis of the results obtained with the other technique. GaAs/GalnP interface spreads out over a shorter length than GaAs/AlInP interface. The former could include the presence of the quaternary GalnAsP in addition to the nominal GaAs and GalnP layers. On the contrary, the GaAs/AlInP interface exhibits a higher degree of compound mixture. Namely, traces of P atoms in a chemical environment different to the usual AllnP coordination were found at the top of the GaAs/AlInP interface, as well as mixed phases like AllnP, GalnAsP or AlGalnAsP, located at the interface.

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Section: Introductionmentioning

confidence: 99%

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

López-Escalante

Gabás

García

et al. 2016

Applied Surface Science

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show abstract

“…[ 15 ] The GaAs|GaInP interface has also been studied extensively by scanning tunneling microscopy and spectroscopy, [ 16 ] scanning transmission electron microscopy, [ 17 ] as well as photoluminescence and Hall measurements. [ 18 ] All these studies concluded with the formation of extra multinary interlayers (GaInAs, GaAsP, or even GaInAsP). However, these techniques provide either electronic or chemical information while PES in principle may provide both at the same time.…”

Section: Introductionmentioning

confidence: 99%

Tapered Cross Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III‐V Semiconductor Devices

Maheu

Pour

Damestoy

et al. 2022

Adv Materials Inter

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Interfaces are key elements that define electronic properties of the final device. Inevitably, most of the active interfaces of III–V semiconductor devices are buried and it is therefore not straightforward to characterize them. The Tapered Cross Section Photoelectron Spectroscopy (TCS‐PES) approach is promising to address such a challenge. That the TCS‐PES can be used to study the relevant heterojunction in epitaxial III–V architectures prepared by metalorganic chemical vapor deposition is demonstrated here. A MULTIPREP polishing system that enables controlling the angle between the sample holder and the polishing plate has been employed to improve the reproducibility of the polishing procedure. With this procedure, that preparing the TCS of III–V semiconductor devices with tapering angles lower than 0.02° is possible is demonstrated. The PES provides then information about the buried interfaces of Ge|GaInP and GaAs|GaInP layer stacks. Both, chemical and electronic properties have been measured by PES. It evidences that the preparation of the TCSs under an uncontrolled atmosphere modifies the pristine properties of the critical buried heterointerfaces. Surface states and reaction layers are created on the TCS surface, which restrict unambiguous conclusions on buried interface energetics.

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“…In [13], for instance, electron microscopies reveal the interfaces between GaP and Si as well as the interfaces between the bulk GaP and the numerous antiphase domains. The GaAs|GaInP interface has also been studied extensively by scanning tunneling microscopy and spectroscopy [14], scanning transmission electron microscopy [15], as well as photoluminescence and Hall measurements [16]. They all concluded with the formation of extra interlayers (GaInAs, GaAsP, or even GaInAsP).…”

Section: Introductionmentioning

confidence: 99%

Tapered Cross-Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III-V Semiconductor Devices

Maheu

Pour

Damestoy

et al. 2022

Preprint

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Interfaces are key elements that define electronic properties of the final device. Inevitably, the active interfaces of III-V semiconductor devices are buried and it is therefore not straightforward to characterize them. The Tapered Cross-Section Photoelectron Spectroscopy (TCS-PES) approach is a promising method to address such a challenge. For the first time, we demonstrate the TCS-PES on III-V architectures. A MULTIPREPTM polishing system that enables controlling the angle between the sample holder and the polishing plate has been employed to improve reproducibility of the polishing procedure. With such equipment, we demonstrate that preparing the TCS of III-V semiconductor devices with tapering angles lower than 0.02° is possible. The TCS-PES provides then information about the buried interfaces of Ge|GaInP and GaAs|GaInP layer stacks, prepared by metalorganic chemical vapor deposition (MOCVD). Both, chemical and electronic properties have been measured by PES. It evidences that the preparation of the TCSs under an uncontrolled atmosphere modifies the pristine properties of the critical buried heterointerfaces. Surface states and reaction layers are created on the TCS surface, which restrict unambiguous conclusions on buried interface energetics.

show abstract

As–P interface-sensitive GaInP/GaAs structures grown in a production MBE system

Cited by 6 publications

References 11 publications

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

Tapered Cross Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III‐V Semiconductor Devices

Tapered Cross-Section Photoelectron Spectroscopy Provides Insights into the Buried Interfaces of III-V Semiconductor Devices

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