2015
DOI: 10.1088/0256-307x/32/8/088401
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In x Ga 1− x N/GaN Multiple Quantum Well Solar Cells with Conversion Efficiency of 3.77%

Abstract: We report on fabrication and photovoltaic characteristics of In𝑥Ga1−𝑥N/GaN multiple quantum well solar cells with different indium compositions and barrier thicknesses. The as-grown samples are characterized by highresolution x-ray diffraction and reciprocal space mapping. The results show that the sample with a thick barrier thickness (10.0 nm) and high indium composition (0.23) has better crystalline quality. In addition, the dark current density-voltage (𝐽-𝑉 ) measurement of this device shows a signific… Show more

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Cited by 6 publications
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“…The determination of these parameters makes possible to overcome the technologic difficulties encountered in the consuming time development of such devices. The open circuit voltage is related to the band gap E g via the following equation [28,29]:…”
Section: Resultsmentioning
confidence: 99%
“…The determination of these parameters makes possible to overcome the technologic difficulties encountered in the consuming time development of such devices. The open circuit voltage is related to the band gap E g via the following equation [28,29]:…”
Section: Resultsmentioning
confidence: 99%