Optimization of growth and fabrication techniques to enhance the InGaN/GaN multiple quantum well solar cells performance

Liu, Shiming; Wang, Quan; Xiao, Hongling; Wang, Kun; Wang, Cuimei; Wang, Xiaoliang; Ge, Weikun; Wang, Zhanguo

doi:10.1016/j.spmi.2017.05.014

Cited by 14 publications

(8 citation statements)

References 35 publications

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“…A longer carrier lifetime indicates a higher possibility for photogenerated carriers to be collected at contacts. 41,42 Compared to the reference structure, those with AlGaN layers all exhibited significantly improved carrier lifetimes (>40%). This is due to the increased band bending in the quantum wells and thus reduced carrier recombination.…”

mentioning

confidence: 99%

Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers

Huang

Chen

et al. 2018

Applied Physics Letters

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In this paper, we perform a comprehensive study on energy band engineering of InGaN multi-quantum-well (MQW) solar cells using AlGaN electron- and hole-blocking layers. InGaN MQW solar cells with AlGaN layers were grown by metalorganic chemical vapor deposition, and high crystal quality was confirmed by high resolution X-ray diffraction measurements. Time-resolved photoluminescence results showed that the carrier lifetime on the solar cells with AlGaN layers increased by more than 40% compared to that on the reference samples, indicating greatly improved carrier collections. The illuminated current-density (J–V) measurements further confirmed that the short-circuit current density (Jsc) of the solar cells also benefited from the AlGaN layer design and increased 46%. At room temperature, the InGaN solar cells with AlGaN layers showed much higher power conversion efficiency (PCE), by up to two-fold, compared to reference devices. At high temperatures, these solar cells with AlGaN layers also delivered superior photovoltaic (PV) performance such as PCE, Jsc, and fill factor than the reference devices. These results indicate that band engineering with AlGaN layers in the InGaN MQW solar cell structures can effectively enhance the carrier collection process and is a promising design for high efficiency InGaN solar cells for both room temperature and high temperature PV applications.

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mentioning

confidence: 99%

Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers

Huang

Chen

et al. 2018

Applied Physics Letters

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“…Other optical band gap energies of the GaN thin film were also higher than those from studies in the literature [70][71][72]. As a result, the change in the RF power changed the optical band gap of the thin film, which can contribute to the efficiency of photonic devices such as multiple quantum well solar cells [73] and LEDs [74].…”

Section: Morphological Analysis By Semmentioning

confidence: 91%

Power-dependent physical properties of $$\mathbf{GaN}$$ thin films deposited on sapphire substrates by RF magnetron sputtering

Mantarcı

Kundakçı

2019

Bull Mater Sci

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Gallium nitride (GaN) thin films were grown on the Al 2 O 3 (0001) substrate using radio frequency (RF) magnetron sputtering under various RF powers. Many experimental techniques were used for investigating the effects of RF power on the GaN thin film growth and its physical properties. The X-ray diffraction results confirmed that the GaN thin film had a polycrystalline structure with planes of (101) and (202). The structural parameters of the thin film changed with RF powers. It was also found that the optical band gap energy of GaN thin films varied with changing RF power. From the atomic force microscopy images, almost homogeneous, nanostructured and a low-rough surface of the GaN thin film can be observed. From scanning electron microscopy analysis, dislocations and agglomerations were observed in some regions of the surface of the GaN thin film. E 2 (high) optical phonon mode of GaN was observed, proving the hexagonal structure of the thin film. The residual stress in the GaN thin films was calculated from Raman measurements. Furthermore, an agreement between the experimental measurements was also examined. The morphological, structural and optical properties of the GaN thin film could be improved with altering RF power. These films could be used in devices such as light emitting diodes, solar cells and diode applications.

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“…Not only are these values much larger than all prior reports using particulate photocatalysts, they also exceed the photovoltaic power conversion efficiencies reported for the same semiconductor absorber they used. 8 Below, we will discuss some of the fundamental insights which led to this "world record" report and also discuss some limitations of the study.…”

Section: Narrativementioning

confidence: 99%

A tipping point for solar production of hydrogen?

Jung

Ager

2023

Joule

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Optimization of growth and fabrication techniques to enhance the InGaN/GaN multiple quantum well solar cells performance

Cited by 14 publications

References 35 publications

Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers

Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers

Power-dependent physical properties of $$\mathbf{GaN}$$ thin films deposited on sapphire substrates by RF magnetron sputtering

A tipping point for solar production of hydrogen?

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