In2Se3 films produced by Bi substitution in the hot-wall-epitaxy growth of Bi2Se3 films on In-containing surfaces

Takagaki, Y.; Jenichen, B.; Jahn, U.; Ramsteiner, M.; Biermann, K.

doi:10.1088/0268-1242/28/11/115013

Cited by 9 publications

(22 citation statements)

References 36 publications

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“…It is worthy to point out that in the deposition of Bi 2 Se 3 films on InP whether the materials are exchanged or not also depends on a condition in the growth procedure . The substitution reaction in this case is activated when the InP surface is mechanically damaged.…”

Section: Resultsmentioning

confidence: 99%

“…It is worthy to point out that in the deposition of Bi 2 Se 3 films on InP whether the materials are exchanged or not also depends on a condition in the growth procedure. 20 The substitution reaction in this case is activated when the InP surface is mechanically damaged. Furthermore, the In 2 Se 3 films produced by the defects-induced reaction are of the γ phase when the damaging is carried out using Ar ion milling.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…β-In 2 S 3 layers were produced by means of material substitution that occurs when InP substrates are exposed to the vapor of S-containing compounds such as Bi 2 S 3 and Sb 2 S 3 . , The pieces of Sb 2 S 3 or Bi 2 S 3 (0.7 g) and InP(111)B substrates were placed in a quartz tube having an inner diameter of 21 mm in a vacuum. The Sb 2 S 3 source region was heated to a nominal temperature of 400 °C, while a descending temperature gradient (∼3.6 °C/cm) was set up in the part away from the source using a horizontal three-zone furnace .…”

Section: Methodsmentioning

confidence: 99%

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Surfactant-Induced Alterations of Epitaxial Orientation in β-In₂S₃ Layers on InP

Takagaki

Hanke

Ramsteiner

2021

Crystal Growth & Design

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InP(111) surfaces are sulfurized using vaporized Sb 2 S 3 and Bi 2 S 3 as the providers of S. Temperatures higher than 340 °C are required to substitute the Sb atoms in Sb 2 S 3 with the In atoms from the substrates although such a substitution occurs regardless of the temperature when Bi 2 S 3 is used. In β-In 2 S 3 layers produced as a consequence of the sulfurization, the epitaxial growth takes place not only in the generally favored (103) orientation but also in a sourcedependent additional orientation. The primary coexisting orientation is ( 110) and (109) for using Sb 2 S 3 and Bi 2 S 3 , respectively. The surface free energy is changed by the coverage with Sb and Bi generated in the substitution, giving rise to the alterations of the growth orientation. While the absence of the substitution reaction results in depositing polycrystalline Sb 2 S 3 films at medium temperatures, the deposition is made possible by thermally activated sticking of Sb 2 S 3 species to the InP surfaces. It is also shown that the sulfurization and the deposition of the Sb 2 S 3 films are restricted when excess Sb is added to the Sb 2 S 3 vapor.

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Section: Resultsmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Surfactant-Induced Alterations of Epitaxial Orientation in β-In₂S₃ Layers on InP

Takagaki

Hanke

Ramsteiner

2021

Crystal Growth & Design

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“…The chalcogenide film that we employ in the present work was produced by material substitution that occurred when Bi 2 S 3 was deposited by hot wall epitaxy on a Cu film [12][13][14][15][16]. The epitaxy was carried out by placing polycrystalline Bi 2 S 3 pieces and a Cu-coated Si(0 0 1) substrate in an evacuated quartz tube with a distance of about 30 cm from each other.…”

Section: Film Growthmentioning

confidence: 99%

Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions

Takagaki

Ramsteiner

Jahn

et al. 2019

J. Phys. D: Appl. Phys.

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Electrically induced resistive switching resulting from ionic transport and electrochemical redox reactions is promising for future generation non-volatile memory devices and artificial neural computing. The key ingredient for the highly efficient neural computing in this context is a memristor, which is a special type of a resistive two-terminal element whose electrical properties depend on not only the state of the element but also how the state has been achieved in its history. Memristor characteristics are demonstrated in a bilayer junction of Al and a Bi–Cu–S alloy utilizing electrically reversible generation of an insulating interface. The high resistance due to the interface layer drops abruptly by orders of magnitude when the barrier is annihilated electrochemically under a bias. The barrier is made to be robust by applying a reverse bias, giving rise to a controllable memory effect on the switching phenomenon. The switching mechanism based on the manipulation of a barrier, which is complementary to conventional bridging conductive filaments, will open the way for new functionalities as device elements.

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“…In hot wall epitaxy growth of chalcogenide layers, the composing elements in the layers are substituted by the atoms diffused from the substrates for some combinations of the layer and substrate materials [1][2][3][4]. For Bi 2 Se 3 [1], Bi 2 Te 3 [2] and Sb 2 Te 3 [2] layers prepared on Cu or Ag surfaces, Bi and Sb are replaced entirely by these transition metals.…”

Section: Introductionmentioning

confidence: 99%

Element substitution from substrates in Bi₂Se₃, Bi₂Te₃and Sb₂Te₃overlayers deposited by hot wall epitaxy

Takagaki¹,

Jahn²,

Jenichen³

et al. 2014

Semicond. Sci. Technol.

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In depositing Bi 2 Se 3 , Bi 2 Te 3 or Sb 2 Te 3 layers on certain substrates by hot wall epitaxy, the Bi and Sb atoms in the layers are replaced by the atoms supplied from the substrates. We extend our exploration on this substitution phenomenon for a number of combinations of the layer and the substrate to infer the factors that determine the occurrence of the substitution. Using a series of Ga-and In-based III-V substrates, it is evidenced that the group III atoms substitute the group V overlayer atoms when the bonds in the substrates are weak. We demonstrate that Ag triggers the substitution more effectively than Cu as a catalyst. The competition between the catalyst-induced substitutions on ternary alloy substrates shows that the dependence on the bond strength is not as strong as to be exclusive. Additionally, defectiveness around the interface between a semicoherently grown α-In 2 Se 3 layer produced by the substitution and the InAs substrate is demonstrated. The cathodeluminescence properties are also provided focusing on the dependence on the phase of In 2 Se 3 .

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In₂Se₃ films produced by Bi substitution in the hot-wall-epitaxy growth of Bi₂Se₃ films on In-containing surfaces

Cited by 9 publications

References 36 publications

Surfactant-Induced Alterations of Epitaxial Orientation in β-In₂S₃ Layers on InP

Surfactant-Induced Alterations of Epitaxial Orientation in β-In₂S₃ Layers on InP

Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions

Element substitution from substrates in Bi₂Se₃, Bi₂Te₃and Sb₂Te₃overlayers deposited by hot wall epitaxy

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In2Se3 films produced by Bi substitution in the hot-wall-epitaxy growth of Bi2Se3 films on In-containing surfaces

Cited by 9 publications

References 36 publications

Surfactant-Induced Alterations of Epitaxial Orientation in β-In2S3 Layers on InP

Surfactant-Induced Alterations of Epitaxial Orientation in β-In2S3 Layers on InP

Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions

Element substitution from substrates in Bi2Se3, Bi2Te3and Sb2Te3overlayers deposited by hot wall epitaxy

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In₂Se₃ films produced by Bi substitution in the hot-wall-epitaxy growth of Bi₂Se₃ films on In-containing surfaces

Surfactant-Induced Alterations of Epitaxial Orientation in β-In₂S₃ Layers on InP

Surfactant-Induced Alterations of Epitaxial Orientation in β-In₂S₃ Layers on InP

Element substitution from substrates in Bi₂Se₃, Bi₂Te₃and Sb₂Te₃overlayers deposited by hot wall epitaxy