Memristive resistive switch based on spontaneous barrier creation in metal-chalcogenide junctions

Abstract

Electrically induced resistive switching resulting from ionic transport and electrochemical redox reactions is promising for future generation non-volatile memory devices and artificial neural computing. The key ingredient for the highly efficient neural computing in this context is a memristor, which is a special type of a resistive two-terminal element whose electrical properties depend on not only the state of the element but also how the state has been achieved in its history. Memristor characteristics are demonstrated in a bilayer junction of Al and a Bi–Cu–S alloy utilizing electrically reversible generation of an insulating interface. The high resistance due to the interface layer drops abruptly by orders of magnitude when the barrier is annihilated electrochemically under a bias. The barrier is made to be robust by applying a reverse bias, giving rise to a controllable memory effect on the switching phenomenon. The switching mechanism based on the manipulation of a barrier, which is complementary to conventional bridging conductive filaments, will open the way for new functionalities as device elements.

Multiphotoconductance Levels of the Organic Semiconductor of Polyimide-Based Memristor Induced by Interface Charges

“…M emristors, featuring high nonlinearity, 1,2 low power consumption, 3,4 and continuously modulated conductance, 5,6 have made significant progress and breakthroughs ranging from memory-in logic, T-bit data storage, and bioinspired neuromorphic computing. 7−9 Memristive materials include three categories: oxides, 10,11 chalcogenides, 12,13 and organics. 14,15 Oxides compatible with CMOS as the mainstream switching layer have been extensively investigated for decades.…”

“…Memristors, featuring high nonlinearity, , low power consumption, , and continuously modulated conductance, , have made significant progress and breakthroughs ranging from memory-in logic, T-bit data storage, and bioinspired neuromorphic computing. − Memristive materials include three categories: oxides, , chalcogenides, , and organics. , Oxides compatible with CMOS as the mainstream switching layer have been extensively investigated for decades . In contrast to oxides, organics with tremendous varieties due to the millions of carbon, hydrogen, oxygen, and nitrogen compositions exhibit unique memristive synapse adjustability to faithfully mimic the neurological system’s function. , …”

Memristive behaviour of electrodeposited bismuth selenide

“…In contrast to Ag electrodes, our measurements with gold electrodes showed no memristive behaviour, even at higher voltage sweeps of ±2 V (figure 7 inset). According to Takagaki et al, material incorporation does not occur when Au is used to grow Bi 2 Se 3 films [38,39], also confirmed by Walsh et al with Au evaporation on Bi 2 Se 3 films [40]. The resistance of the as-deposited films with Au contacts typically ranged from a few hundred ohms to a few kilo ohms-lower or comparable to the LRS of Ag/BiSe devices.…”

Charge storage in metal-chalcogenide bilayer junctions

“…There are evidences that indicate that the resistance switching takes place by creating pinholes in the barrier layer, thereby causing a short-circuit of the junction, rather than dissolving the entire barrier layer. In [12], the interfacial resistance switching was observed to occur in a device where the contact was prepared by depositing a millimeter-size Al pad instead of bonding the Al wire. The resistance switching did not occur initially due to the shortcircuiting of the junction in defective areas of such a large Al contact [35].…”

“…The junctions of metal-chalcogenides in the form of (Bi,Sb)-(Cu,Ag,Ni)-(S,Se,Te) with a metal such as Al and Ag develop a resistance switching phenomenon [12][13][14]. High resistivity compounds are produced at the interface by a room temperature (RT) spontaneous reaction [15].…”