In_0.5Ga_0.5N layers by atomic layer deposition

Abstract

We present an ALD approach to metastable In1-xGaxN with 0.1 < x < 0.5 based on solid In- and Ga-precursors that were co-sublimed into the deposition chamber in one pulse....

Synthesis, Structure and Thermal Properties of Volatile Indium and Gallium Triazenides**

“…However, in those studies their suitability for vapour deposition was not investigated. In contrast, we recently revealed the In(III) and Ga(III) 1,3‐diisopropyltriazenides 1 a and 2 a (Figure 1) and their subsequent use in ALD of InN, GaN, InGaN and In 2 O 3 [33–36] . It should be noted that 2 a was the first example of a homoleptic hexacoordinated M−N bonded compound used for vapour deposition.…”

“…In contrast, we recently revealed the In(III) and Ga(III) 1,3-diisopropyltriazenides 1 a and 2 a (Figure 1) and their subsequent use in ALD of InN, GaN, InGaN and In 2 O 3 . [33][34][35][36] It should be noted that 2 a was the first example of a homoleptic hexacoordinated MÀ N bonded compound used for vapour deposition. Interestingly, both compounds underwent gas-phase thermolysis at high temperatures inside the ALD reactor to give a smaller and more reactive metal species.…”

Synthesis, Structure, and Properties of Volatile Lanthanide Dialkyltriazenides

“…Triazenide complexes of the alkali metals, transition metals, − and main group metals − are well-known, and homoleptic triazenide complexes of some main group elements have been used as precursors for the deposition of nitride films by atomic layer deposition (ALD). − Although several lanthanide triazenide complexes are known, all of them contain 1,3-diaryltriazenide ligands, − and the large London forces and π–π stacking characteristic of aryl groups render the complexes essentially nonvolatile and thus unsuited for use as CVD precursors. For example, tris­(1,3-diphenyltriazenido)­bis­(pyridine) complexes of erbium and lutetium were studied in the context of vapor deposition, but these complexes decompose before subliming …”

Synthesis, Structure, and Thermal Properties of Volatile Group 11 Triazenides as Potential Precursors for Vapor Deposition

“…Recently, we reported the first examples of volatile group 13 and 14 dialkyltriazenides. − The Ga and In triazenides have been used as ALD precursors to afford excellent-quality GaN, InN, InGaN, and In 2 O 3 . ,,− With the success of the triazenide ligand to produce volatile and thermally stable group 13 and 14 compounds, we decided to investigate its reactivity with monovalent coinage metals. Herein, we report the synthesis, structure, and thermal properties of monovalent group 11 triazenides.…”