In situ X-ray diffraction during stacking of InAs/GaAs(001) quantum dot layers and photoluminescence spectroscopy

Takahasi, Masamitu; Kaizu, Toshiyuki

doi:10.1016/j.jcrysgro.2008.09.202

Cited by 13 publications

(3 citation statements)

References 20 publications

(24 reference statements)

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“…[54][55][56][57][58][59][60][61][62] One of the advantages of XRD as an in situ tool is its wide application range as a consequence of the weak interaction of X-rays with matter. Crystal growth takes place at the surface of a crystal in contact with a mother phase.…”

Section: Introductionmentioning

confidence: 99%

“…38) The development of two-dimensional (2D) X-ray detectors has facilitated the in situ XRD studies of strain relaxation during heteroepitaxy, [39][40][41][42][43][44][45][46][47] NW growth, [48][49][50][51][52][53] and QD growth. [54][55][56][57][58][59][60][61][62] One of the advantages of XRD as an in situ tool is its wide application range as a consequence of the weak interaction of X-rays with matter. Crystal growth takes place at the surface of a crystal in contact with a mother phase.…”

Section: Introductionmentioning

confidence: 99%

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In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

Takahasi

2018

Jpn. J. Appl. Phys.

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The application of in situ synchrotron X-ray diffraction (XRD) to the molecular-beam epitaxial (MBE) growth of III-V semiconductors is overviewed along with backgrounds of the diffraction theory and instrumentation. X-rays are sensitive not only to the surface of growing films but also to buried interfacial structures because of their large penetration depth. Moreover, a spatial coherence length up to µm order makes X-rays widely applicable to the characterization of low-dimensional structures, such as quantum dots and wires. In situ XRD studies during growth were performed using an X-ray diffractometer, which was combined with an MBE chamber. X-ray reciprocal space mapping at a speed matching a typical growth rate was achieved using intense X-rays available from a synchrotron light source and an area detector. The importance of measuring the three-dimensional distribution of XRD intensity in a reciprocal space map is demonstrated for the MBE growth of two-, one-, and zero-dimensional structures. A large amount of information about the growth process of two-dimensional InGaAs/GaAs(001) epitaxial films has been provided by three-dimensional X-ray reciprocal mappings, including the anisotropic strain relaxation, the compositional inhomogeneity, and the evolution of surface and interfacial roughness. For one-dimensional GaAs nanowires grown in a Au-catalyzed vapor-liquid-solid mode, the relationship between the diameter of the nanowires and the formation of polytypes has been suggested on the basis of in situ XRD measurements. In situ three-dimensional X-ray reciprocal space mapping is also shown to be useful for determining the lateral and vertical sizes of self-assembled InAs/GaAs(001) quantum dots as well as their internal strain distributions during growth.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

Takahasi

2018

Jpn. J. Appl. Phys.

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“…[17][18][19] Furthermore, we have shown that the structural properties characterized by in situ X-ray diffraction closely correlate with the optical properties measured by photoluminescence spectroscopy. 20) This X-ray technique provides us with a unique opportunity to investigate the QD structural changes, which are possibly caused by quenching. In the present work, we compared QD structures before and after quenching by in situ X-ray diffraction to reveal the effects of quenching.…”

Section: Introductionmentioning

confidence: 99%

Structural Changes Caused by Quenching of InAs/GaAs(001) Quantum Dots

Takahasi

Fujikawa

2011

Jpn. J. Appl. Phys.

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Self-assembled InAs/GaAs(001) quantum dot structures before and after quenching were investigated by in situ X-ray diffraction to assess the effects of quenching. Before quenching, quantums dots were uniform in size so that the shape and internal lattice constant distribution of a quantum dot were quantitatively determined on the basis of three-dimensional X-ray intensity mapping. X-ray measurements after quenching revealed that the quantum dot size showed a bimodal distribution as a result of the proliferation of dislocated islands during quenching. A formula to describe the X-ray diffraction from dislocated islands with a large size distribution is presented. The cooling rate between 20 and 40 K/min was found to have little effect on the structures of quenched quantum dots.

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Emission and elastic strain study in GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells with embedded InAs quantum dots

Vega-Macotela

Torchynska

Polupan

2017

J Mater Sci: Mater Electron

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In situ X-ray diffraction during stacking of InAs/GaAs(001) quantum dot layers and photoluminescence spectroscopy

Cited by 13 publications

References 20 publications

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

Structural Changes Caused by Quenching of InAs/GaAs(001) Quantum Dots

Emission and elastic strain study in GaAs/In0.15Ga0.85As/InxGa1−xAs/GaAs quantum wells with embedded InAs quantum dots

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