In situ transmission electron microscopy observations of the formation of self-assembled Ge islands on Si

Ross, Frances M.; Tersoff, J.; Reuter, M. C.; LeGoues, F. K.; Tromp, R. M.

doi:10.1002/(sici)1097-0029(19980915)42:4<281::aid-jemt7>3.0.co;2-t

Cited by 19 publications

(4 citation statements)

References 91 publications

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“…In Fig. 18 Also supporting the argument that no wetting layer is formed, Fig. 2͑b͒ shows that island density remains constant to within error for the range of GaP thicknesses studied here.…”

supporting

confidence: 82%

Tensile strained island growth at step-edges on GaAs(110)

Simmonds

Lee

2010

Applied Physics Letters

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supporting

confidence: 82%

Tensile strained island growth at step-edges on GaAs(110)

Simmonds

Lee

2010

Applied Physics Letters

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“…For vapor deposition these are LEEM, STM [15], and TEM [16] whereas for solution crystal growth these are fluid cell TEMs [17,18] and various flavors of scanning probe microscopes. Except for SPMs, all of these are specialized or unique instruments.…”

Section: Introductionsupporting

confidence: 61%

The Use of Scanning Probe Microscopy to Investigate Crystal-Fluid Interfaces

Orme¹,

Giocondi²

2007

AIP Conference Proceedings

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Abstract. Over the past decade there has been a natural drive to extend the investigation of dynamic surfaces in fluid environments to higher resolution characterization tools. Various aspects of solution crystal growth have been directly visualized for the first time. These include island nucleation and growth using transmission electron microscopy and scanning tunneling microscopy; elemental step motion using scanning probe microscopy; and the time evolution of interfacial atomic structure using various diffraction techniques. In this lecture we will discuss the use of one such in situ method, scanning probe microscopy, as a means of measuring surface dynamics during crystal growth and dissolution. We will cover both practical aspects of imaging such as environmental control, fluid flow, and electrochemical manipulation, as well as the types of physical measurements that can be made. Measurements such as step motion, critical lengths, nucleation density, and step fluctuations, will be put in context of the information they provide about mechanistic processes at surfaces using examples from metal and mineral crystal growth.

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“…4b!. On a planar surface, continued deposition and coarsening eventually causes some islands to become large enough for dislocations to be introduced; these dislocated islands are strong sinks for Ge and, once formed, they grow quickly at the expense of smaller islands~Drucker, 1993;LeGoues et al, 1994;Ross et al, 1998a!. On the patterned substrate we find an analogous process: a mesa island forms dislocations then grows downhill off the mesa and absorbs the valley and remaining small mesa islands by coarsening.…”

Section: Growth Of Ge On Mesas and In Valleysmentioning

confidence: 76%

In SituReflection Electron Microscopy of Ge Island Nucleation on Mesa Structures

et al. 2004

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We have used in situ electron microscopy to observe the nucleation of Ge islands on lithographically patterned Si(001) mesas. Images were obtained at video rate during chemical vapor deposition of Ge, using a reflection electron microscopy geometry that allows nucleation to be observed over large areas. By comparing the kinetics of nucleation and coarsening on substrates modified by different annealing conditions, we find that the final island arrangement depends on the nature of the mesa sidewalls, and we suggest that this may be due to changes in diffusion of Ge across the nonplanar surface.

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In situ transmission electron microscopy observations of the formation of self-assembled Ge islands on Si

Cited by 19 publications

References 91 publications

Tensile strained island growth at step-edges on GaAs(110)

Tensile strained island growth at step-edges on GaAs(110)

The Use of Scanning Probe Microscopy to Investigate Crystal-Fluid Interfaces

In SituReflection Electron Microscopy of Ge Island Nucleation on Mesa Structures

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