In-situ study of growth of carbon nanotube forests on conductive CoSi2 support

Bayer, Bernhard C.; Zhang, C.; Blume, Raoul; Yan, Feng; Fouquet, Martin; Wirth, Christoph; Weatherup, Robert S.; Lin, L.Y.; Baehtz, Carsten; Oliver, Rachel A.; Knop‐Gericke, Axel; Schlögl, Robert; Hofmann, Stephan; Robertson, John

doi:10.1063/1.3592234

Cited by 32 publications

(29 citation statements)

References 52 publications

(83 reference statements)

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“…S6). We obtained resistance values of 39-95 kX for CNTs grown at 400°C, which are comparable with the previous works; 95 ± 46, 35, 80 ± 60 kX for CNTs grown at 450, 475, 650°C using AFM tips with R = 20, 20-30, $20 nm, respectively [21,32,33]. The resistance values should be affected by the contact resistance between the AFM tip and the CNT arrays, which could be reduced by forming appropriate contact layer [17].…”

Section: Direct Counting Of Cnts and Their Walls In The Arrayssupporting

confidence: 84%

Simple and engineered process yielding carbon nanotube arrays with 1.2 × 1013cm−2 wall density on conductive underlayer at 400 °C

Kim

et al. 2015

Carbon

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A B S T R A C TA simple process is presented that realizes carbon nanotube (CNT) arrays that meet the process and structure requirements for use in large-scale integrated circuits. Ni particles are formed densely on a conductive TiN layer on SiO 2 /Si substrates through nucleation and growth by sputtering, which was stopped prior to percolation of the Ni particles. Ni particles as dense as 2.8 · 10 12 cm À2 were formed after annealing at 400°C and chemical vapor deposition (CVD) was carried out at 400°C by feeding C 2 H 2 at partial pressures as low as 0.13-1.3 Pa so as not to kill the catalyst. Scanning electron microscopy with energy dispersive X-ray spectroscopy revealed the mass density of the arrays to be as high as 1.1 g cm À3 . High resolution transmission electron microscopy showed the densely packed CNTs with an average wall number of eight. Atomic force microscopy of the root of the CNT arrays transferred to a SiO 2 /Si substrate enabled direct counting of individual CNTs, revealing areal densities of CNTs and CNT walls as high as 1.5 · 10 12 and 1.2 · 10 13 cm À2 , respectively. The simple process, using conventional sputtering and CVD apparatus, with carefully engineered conditions offers a route for practical application of CNTs.

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Section: Direct Counting Of Cnts and Their Walls In The Arrayssupporting

confidence: 84%

Simple and engineered process yielding carbon nanotube arrays with 1.2 × 1013cm−2 wall density on conductive underlayer at 400 °C

Kim

et al. 2015

Carbon

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“…The current-voltage (I–V) characteristic obtained from a two-probe resistivity measurement between the CNTs and Cu (Fig. 4a) displays Ohmic contact, with a low contact resistance (~ 50 Ω/μm 2 ) that is lower than previously reported values for CNT forests with similar densities (~ 10 10 CNTs/cm 2 )2230. Further evidence for the good electrical contact was obtained by electrochemical impedance spectroscopy (EIS) measurements on an electrochemical cell assembled with the CNT forests on Cu electrodes.…”

Section: Discussionmentioning

confidence: 68%

Graphene as an atomically thin interface for growth of vertically aligned carbon nanotubes

Rao

Chen

Arava

et al. 2013

Sci Rep

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Growth of vertically aligned carbon nanotube (CNT) forests is highly sensitive to the nature of the substrate. This constraint narrows the range of available materials to just a few oxide-based dielectrics and presents a major obstacle for applications. Using a suspended monolayer, we show here that graphene is an excellent conductive substrate for CNT forest growth. Furthermore, graphene is shown to intermediate growth on key substrates, such as Cu, Pt, and diamond, which had not previously been compatible with nanotube forest growth. We find that growth depends on the degree of crystallinity of graphene and is best on mono- or few-layer graphene. The synergistic effects of graphene are revealed by its endurance after CNT growth and low contact resistances between the nanotubes and Cu. Our results establish graphene as a unique interface that extends the class of substrate materials for CNT growth and opens up important new prospects for applications.

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“…In the case of a metal support, the challenges lie in: 1. A metal support has higher surface energy than an oxide support [19,20], so that it is more difficult to form high-density and small catalytic nanoparticles on the metal surface through dewetting under the growth temperature. 2.…”

Section: Introductionmentioning

confidence: 99%

Single-step CVD growth of high-density carbon nanotube forests on metallic Ti coatings through catalyst engineering

Zhong

Xie

Yang

et al. 2014

Carbon

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We demonstrate the direct growth of carbon nanotube (CNT) forests on metallic titanium (Ti) coatings by single-step chemical vapour deposition. This was achieved by catalyst engineering, which involves a novel design of Fe/Ti/Fe nanostructure sputtering coated on SiO 2 /Si wafers. The Fe sublayer, an additional catalyst added to the conventional catalyst/support design, plays a key role in the growth of well aligned and highly dense CNT forests. Depth profile analysis of substrates by secondary ion mass spectroscopy shows that the Fe sublayer is thermally unstable at the Ti/SiO 2 interface under the growth conditions. Catalyst diffusion back to the surface from the Fe sublayer is much more significant than down towards the SiO 2 /Si substrate from the surface Fe layer. This makes it possible to minimize the thickness of surface catalyst layer, and ensures the growth of well aligned and high-densityCNT forests on Ti coatings. The filling factor of nanotubes on the substrate after liquid-induced compaction can be dramatically increased up to 57%, leading to an estimation of the areal density of around 10 12 cm -2 .

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In-situ study of growth of carbon nanotube forests on conductive CoSi2 support

Cited by 32 publications

References 52 publications

Simple and engineered process yielding carbon nanotube arrays with 1.2 × 1013cm−2 wall density on conductive underlayer at 400 °C

Simple and engineered process yielding carbon nanotube arrays with 1.2 × 1013cm−2 wall density on conductive underlayer at 400 °C

Graphene as an atomically thin interface for growth of vertically aligned carbon nanotubes

Single-step CVD growth of high-density carbon nanotube forests on metallic Ti coatings through catalyst engineering

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