In Situ Resistive Switching Effect Scrutinization on Co‐Designed Graphene Sensor

Xiong, Feng; Wang, Zegao; Bøjesen, Espen Drath; Xiong, Xuya; Zhu, Zhihong; Dong, Mingdong

doi:10.1002/smll.202007053

Cited by 5 publications

(6 citation statements)

References 44 publications

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“…In this case, the accumulated channels would significantly reduce the resistivity of memristor, but thermal effect will also get stronger, leading to reversible breakdown. [53] To reveal the conduction process of LDH/graphene device, overall analysis of I-V characteristics from electroforming process was conducted (Figure 3d). Fresh device usually maintained initially resistive state, which means the ion dynamic was endogenously ordered and keep at charge-balancing environment as illustrated in Figure 3g.…”

Section: Introductionmentioning

confidence: 99%

Ultrathin Anion Conductors Based Memristor

Xiong

Tian

et al. 2021

Adv Elect Materials

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realization of diffusive memristor hinges on the ion dynamics inside channel and electrode materials, depicting resistive switching characteristics, especially for metal migrations in electrochemical metallization memory (ECM). [17] The intrinsic structure and property of channel dielectrics would be changed by active electrode material due to inevitable doping in electroforming process. However, the vertical thickness of channel materials may also restrain the switching response and ions transport efficiency, considering the ions coupling effect and fabricating strategy. Feasible attempts are reported to explore synergistic nonmetal ion dynamic and channel thickness in monolayer and bilayer transition metal dichalcogenides (TMDCs) memristors by means of depleted grain boundary [18,19] and migration of vacancies, [20] which inspire exploration on intrinsic conduction mechanism for 2D materials in lower spatiotemporal region even sub-nanoscale. Layered double hydroxides (LDHs) can be presented by gen-•mH 2 O (M represents metal cations, and A represents anions) are unique specie of the 2D materials with positively charged layers and exchangeable anions in subatomic interlayer space, also exhibiting unique electronic features and memory effect. [21,22] Attributing to abundant hydroxyl groups covalently bonded within 2D brucite layer, LDHs are considered to be candidates for hydroxyl ion conductors with high conductivity, as the confinement of electrons in 2D ultrathin region facilitates their compelling electronic properties, leading to ideal state for manufacturing electronic devices. [23][24][25] The memory effect is revealed by the ability of reconstitution, which allows LDHs to recover from ex-LDH oxides, demonstrating the robust stability with respect to thermal change. [26,27] Thanks to its large specific surface area and rich element composition, 2D fabrication process could be achieved from lamellar LDHs to exfoliated nanosheets. [28,29] Moreover, arising from phase engineering, [30] doping engineering, [31] stress engineering confinement effects, [32] the ion transport efficiency, and memory behavior within the LDH plane are further improved, indicating its great potential for constructing relative nonvolatile devices.Herein, we report the MgAl LDH based memristor with abnormal resistive switching behavior for the first time based on the formation of conductive channels (CCs) in interlayer space. Pristine MgAl LDH were successfully synthesized and furthermore exfoliated into few layered flakes. To simply explore the

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Section: Introductionmentioning

confidence: 99%

Ultrathin Anion Conductors Based Memristor

Xiong

Tian

et al. 2021

Adv Elect Materials

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“…Basically, the evolution of V T can be translated into the downshift of Fermi level, meanwhile confirming its good accordance to increasing work function in KPFM analysis. [6,26] In this case, the electron concentration can express as:…”

Section: Resultsmentioning

confidence: 99%

“…Basically, the evolution of V T can be translated into the downshift of Fermi level, meanwhile confirming its good accordance to increasing work function in KPFM analysis. [ 6,26 ] In this case, the electron concentration can express as:

\begin{array}{*{20}{c}}{n = {C_0}\left( {{V_{{\rm{GS}}}} - {V_{\rm{T}}}} \right){\rm{/}}e}\end{array}

where C 0 is the capacitance of SiO 2 . Therefore, it can be extracted that the incorporation of oxygen species will cause the reduction of electron concentration by 0.11 × 10 12 , 0.17 × 10 12 , and 0.43 × 10 12 cm −2 in terms of treatment procedure.…”

Section: Resultsmentioning

confidence: 99%

Oxygen Incorporated MoS₂ for Rectification‐Mediated Resistive Switching and Artificial Neural Network

Xiong

Ouyang

et al. 2023

Adv Funct Materials

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Molybdenum disulfide (MoS2) based memristor presents intriguing chance for the implementation bio‐inspired artificial synapse and neural interactions. However, the electrical properties of intrinsic MoS2 single‐crystal film suffer from inevitable lattice defects or structure vacancies as well as restraining reliable resistive switching mechanism. Here, a fundamental study on tunable p‐type doping in MoS2 film by controllable oxygen passivation is reported. In situ KPFM measurements reveal a near‐linear increase in Fermi‐level energy. The TiN/O‐MoS2 memristor exhibits surprising bipolar switching feature, revealing an interesting transition between rectification‐mediated and conduction‐mediated characteristics by means of controllable surficial oxygen kinetics. The resistive window demonstrates nearly symmetric SET and RESET domain and capability to analog programming conductance. Moreover, based on the MoS2 memristor, the accuracy up to 94% for MINST recognition ensures the implementation of neural network and LTP/LTD behaviors. This as‐prepared memristor is capable of mimicking synaptic feature through regulated resistive mechanics and electrode contact interaction, which can be an up‐and‐coming strategy for bio‐realistic electronics.

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“…The low-frequency noise decreases the detection reliability of 2D FET sensors in operation. (iii) The miniaturization might meet a limitation from the overload current issue. , Along with increasing transistor density, the accumulated current heat would ruin the 2D semiconductor due to confined thermal dissipation. ,, (iv) The integration density of 2D FET sensors is limited due to their local defects and grain boundaries generated in the synthesis process (e.g., CVD and LPE). , …”

Section: Prototypical Designmentioning

confidence: 99%

Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

2022

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The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.

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In Situ Resistive Switching Effect Scrutinization on Co‐Designed Graphene Sensor

Cited by 5 publications

References 44 publications

Ultrathin Anion Conductors Based Memristor

Ultrathin Anion Conductors Based Memristor

Oxygen Incorporated MoS₂ for Rectification‐Mediated Resistive Switching and Artificial Neural Network

Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

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In Situ Resistive Switching Effect Scrutinization on Co‐Designed Graphene Sensor

Cited by 5 publications

References 44 publications

Ultrathin Anion Conductors Based Memristor

Ultrathin Anion Conductors Based Memristor

Oxygen Incorporated MoS2 for Rectification‐Mediated Resistive Switching and Artificial Neural Network

Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

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Oxygen Incorporated MoS₂ for Rectification‐Mediated Resistive Switching and Artificial Neural Network