In situ production of sputtered epitaxial HoBa2Cu3O7-x thin films

Gómez, M. E.; Castro, L. F.; Morán, O.; Bolaños, G.

doi:10.1016/0038-1098(90)90118-u

Cited by 17 publications

(5 citation statements)

References 7 publications

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“…Experimental Details A high-pressure dc sputtering technique, described in detail elsewhere [3] was used for the deposition of the YBCO films. For the Ag-doped films YBCO targets doped with 5 to 20 wt% of Ag have been used.…”

supporting

confidence: 82%

Improvement in the Properties of Ag-Doped YBa2Cu3O7-x Grain Boundary Josephson Junctions

Bolaños

Baca

Osario

2000

phys. stat. sol. (b)

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Ag‐doped YBa2Cu3O7–x (YBCO) thin films using 5 to 20 wt% Ag‐doped YBCO targets have been grown by a dc sputtering technique on SrTiO3 bicrystals. Critical currents of 4 to 5 × 106 A/cm2 at 77 K were measured in YBCO films doped with 5 wt% Ag which has been found to be higher than the value of 1 × 106 A/cm2 measured in undoped samples. The normal resistivity decreases by a doping of 5 wt% Ag and increases for higher Ag concentrations. The critical temperature, Tc, of the Ag‐YBCO films remained unchanged at 92 K as in the undoped YBCO samples. An IcRn product of 170 μV at 77 K was found in Grain Boundary Josephson junctions (GBJJs) with 5 wt% Ag, compared with the value of 100 μV measured in undoped samples at the same temperature. Current–voltage characteristics were measured in GBJJs, showing Shapiro steps under microwave radiation and Fraunhofer patterns with an external magnetic field. The improvement in the normal and superconducting properties of Ag‐doped YBCO films has been interpreted using the De Gennes model to establish that YBCO containing metallic Ag addition shows a superconductor–normalmetal–superconductor (S–N–S) behavior, thereby the Ag‐doping enhances the weak link behavior and is, therefore, appropriate for electronic applications.

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confidence: 82%

Improvement in the Properties of Ag-Doped YBa2Cu3O7-x Grain Boundary Josephson Junctions

Bolaños

Baca

Osario

2000

phys. stat. sol. (b)

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“…In order to obtain SYSO samples with more ordering degree when compared with the bulk samples, we produce films of this material on conventional SrTiO 3 (STO) single-crystals. There are experimental evidences that the substrate material improves some the characteristics of the high temperature superconducting thin films [3]; for this reason we grow YBa 2 Cu 3 O 7−δ (YBCO) superconducting films on SYSO novel material substrates in the film form.…”

Section: Introductionmentioning

confidence: 99%

Conductivity fluctuation of YBa2Cu3O7 - delta/Sr2YSbO6/SrTiO3 thin films

Mayorga¹,

Téllez²,

Madueño³

et al. 2006

Braz. J. Phys.

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Thermal fluctuations in the electric conductivity of YBa 2 Cu 3 O 7−δ superconducting thin films grown on Sr 2 YSbO 6 novel substrate materials in the film form were experimentally studied. YBa 2 Cu 3 O 7−δ films were grown by using a dc-technique on Sr 2 YSbO 6 substrates, which were produced by rf magnetron sputtering. X-ray diffraction analysis evidenced that the Sr 2 YSbO 6 films grow on conventional SrTiO 3 substrates in a preferential orientation along the (100) planes direction with lattice parameter a=4,43(2)Å. The YBa 2 Cu 3 O 7−δ thin films, grown on Sr 2 YSbO 6 films, exhibit an oriented growth in the (001) crystallographic direction, with lattice constant c=11,65(9)Å. Morphological characterizations were performed by means atomic force microscopy. Experiments of electrical resistivity show that the YBa 2 Cu 3 O 7−δ films present a normal-superconducting transition with critical temperature T c =82,33 K. Fluctuation analysis for the YBa 2 Cu 3 O 7−δ thin films were performed by utilizing the concept of logarithmic derivative of the conductivity excess. Above the critical temperature T c we experimentally determine the occurrence of Gaussian 3D, 2D and fractal fluctuation regimes. A genuinely critical region identified by the exponent λ CR =0,35 were obtained close to T c . This critical regime is effectively described by the 3D-XY model.

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“…10,11 For HBCO films we used pure oxygen at 3.3 mbar of pressure as sputtering gas. Deposition temperatures ranged between 880 • C and 900 • C. The films were annealed for 5 min in full oxygen after deposition at 550 • C. For BSCCO films we used 3.5 mbar of oxygen pressure at a substrate temperature of 910 • C. The films were annealed for 30 min in the same deposition conditions, and postannealed during 45 min using a pressure of 1 × 10 −2 mbar at 700 • C. The typical thickness of both kinds of films was between 100 and 300 nm.…”

Section: Methodsmentioning

confidence: 99%

“…More detailed information about the high quality of the superconducting and structural properties of our samples has been reported elsewhere. [9][10][11][12] The AFM technique operated in air was used to analyze the film morphology. The atomic force microscope is an AutoProbe PC AFM from Park Scientific Instruments.…”

Section: Methodsmentioning

confidence: 99%

SURFACE TOPOGRAPHY ON EPITAXIAL HoBa₂Cu₃O_7-δ AND Bi₂Sr₂CaCu₂O_8+δ THIN FILMS

et al. 2002

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Surface topography on epitaxial HoBa2Cu3O 7−δ (HBCO) and Bi2Sr2CaCu2O 8+δ (BSCCO) thin films analysis by using the atomic force microscopy (AFM) technique was carried out. The films were deposited in situ on SrTiO3 substrates with thicknesses ranging from 100 to 300 nm by a high-pressure sputtering process. Chemical etching with a nonaqueous solution of Br-ethanol was used to modify the surface of the samples. HBCO films showed spiral grains, while BSCCO samples exhibited a terraced growth. Etching with Br-ethanol has different effects on HBCO and BSCCO. In HBCO, etching produces clean surfaces with light changes on the surface morphology, whereas in BSCCO it conduces to strong changes in the structure and the roughness of the film surface. * Corresponding author. 1729 Surf. Rev. Lett. 2002.09:1729-1733. Downloaded from www.worldscientific.com by MCGILL UNIVERSITY on 02/07/15. For personal use only.

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In situ production of sputtered epitaxial HoBa2Cu3O7-x thin films

Cited by 17 publications

References 7 publications

Improvement in the Properties of Ag-Doped YBa2Cu3O7-x Grain Boundary Josephson Junctions

Improvement in the Properties of Ag-Doped YBa2Cu3O7-x Grain Boundary Josephson Junctions

Conductivity fluctuation of YBa2Cu3O7 - delta/Sr2YSbO6/SrTiO3 thin films

SURFACE TOPOGRAPHY ON EPITAXIAL HoBa₂Cu₃O_7-δ AND Bi₂Sr₂CaCu₂O_8+δ THIN FILMS

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In situ production of sputtered epitaxial HoBa2Cu3O7-x thin films

Cited by 17 publications

References 7 publications

Improvement in the Properties of Ag-Doped YBa2Cu3O7-x Grain Boundary Josephson Junctions

Improvement in the Properties of Ag-Doped YBa2Cu3O7-x Grain Boundary Josephson Junctions

Conductivity fluctuation of YBa2Cu3O7 - delta/Sr2YSbO6/SrTiO3 thin films

SURFACE TOPOGRAPHY ON EPITAXIAL HoBa2Cu3O7-δ AND Bi2Sr2CaCu2O8+δ THIN FILMS

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SURFACE TOPOGRAPHY ON EPITAXIAL HoBa₂Cu₃O_7-δ AND Bi₂Sr₂CaCu₂O_8+δ THIN FILMS